JPS592386A - 圧電性薄膜用の電極形成方法 - Google Patents

圧電性薄膜用の電極形成方法

Info

Publication number
JPS592386A
JPS592386A JP57112370A JP11237082A JPS592386A JP S592386 A JPS592386 A JP S592386A JP 57112370 A JP57112370 A JP 57112370A JP 11237082 A JP11237082 A JP 11237082A JP S592386 A JPS592386 A JP S592386A
Authority
JP
Japan
Prior art keywords
film
thin film
platinum
forming
thin
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP57112370A
Other languages
English (en)
Japanese (ja)
Other versions
JPH0443435B2 (enrdf_load_stackoverflow
Inventor
Katsuhiro Kinoshita
木下　勝裕
Masaki Teshigahara
勅使川原　正樹
Mitsutaka Kato
加藤　充孝
Seisuke Hinota
日野田　征佑
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Omron Corp
Original Assignee
Tateisi Electronics Co
Omron Tateisi Electronics Co
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Tateisi Electronics Co, Omron Tateisi Electronics Co filed Critical Tateisi Electronics Co
Priority to JP57112370A priority Critical patent/JPS592386A/ja
Publication of JPS592386A publication Critical patent/JPS592386A/ja
Publication of JPH0443435B2 publication Critical patent/JPH0443435B2/ja
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N30/00—Piezoelectric or electrostrictive devices
    • H10N30/80—Constructional details
    • H10N30/87—Electrodes or interconnections, e.g. leads or terminals
    • H10N30/877—Conductive materials
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N30/00—Piezoelectric or electrostrictive devices
    • H10N30/01—Manufacture or treatment
    • H10N30/06—Forming electrodes or interconnections, e.g. leads or terminals

Landscapes

  • Engineering & Computer Science (AREA)
  • Manufacturing & Machinery (AREA)
  • Electrodes Of Semiconductors (AREA)
JP57112370A 1982-06-28 1982-06-28 圧電性薄膜用の電極形成方法 Granted JPS592386A (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP57112370A JPS592386A (ja) 1982-06-28 1982-06-28 圧電性薄膜用の電極形成方法

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP57112370A JPS592386A (ja) 1982-06-28 1982-06-28 圧電性薄膜用の電極形成方法

Publications (2)

Publication Number Publication Date
JPS592386A true JPS592386A (ja) 1984-01-07
JPH0443435B2 JPH0443435B2 (enrdf_load_stackoverflow) 1992-07-16

Family

ID=14584985

Family Applications (1)

Application Number Title Priority Date Filing Date
JP57112370A Granted JPS592386A (ja) 1982-06-28 1982-06-28 圧電性薄膜用の電極形成方法

Country Status (1)

Country Link
JP (1) JPS592386A (enrdf_load_stackoverflow)

Also Published As

Publication number Publication date
JPH0443435B2 (enrdf_load_stackoverflow) 1992-07-16

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