JPS59232996A - 単結晶引上装置 - Google Patents

単結晶引上装置

Info

Publication number
JPS59232996A
JPS59232996A JP10473383A JP10473383A JPS59232996A JP S59232996 A JPS59232996 A JP S59232996A JP 10473383 A JP10473383 A JP 10473383A JP 10473383 A JP10473383 A JP 10473383A JP S59232996 A JPS59232996 A JP S59232996A
Authority
JP
Japan
Prior art keywords
single crystal
melt
heater
diameter
crystal
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP10473383A
Other languages
English (en)
Japanese (ja)
Other versions
JPH0328397B2 (enrdf_load_stackoverflow
Inventor
Koji Tada
多田　紘二
Tatsusuke Nakai
龍資 中井
Shintaro Miyazawa
宮澤　信太郎
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Nippon Telegraph and Telephone Corp
Sumitomo Electric Industries Ltd
Original Assignee
Nippon Telegraph and Telephone Corp
Sumitomo Electric Industries Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Nippon Telegraph and Telephone Corp, Sumitomo Electric Industries Ltd filed Critical Nippon Telegraph and Telephone Corp
Priority to JP10473383A priority Critical patent/JPS59232996A/ja
Publication of JPS59232996A publication Critical patent/JPS59232996A/ja
Publication of JPH0328397B2 publication Critical patent/JPH0328397B2/ja
Granted legal-status Critical Current

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B27/00—Single-crystal growth under a protective fluid
    • C30B27/02—Single-crystal growth under a protective fluid by pulling from a melt

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Materials Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)
  • Liquid Deposition Of Substances Of Which Semiconductor Devices Are Composed (AREA)
JP10473383A 1983-06-10 1983-06-10 単結晶引上装置 Granted JPS59232996A (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP10473383A JPS59232996A (ja) 1983-06-10 1983-06-10 単結晶引上装置

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP10473383A JPS59232996A (ja) 1983-06-10 1983-06-10 単結晶引上装置

Publications (2)

Publication Number Publication Date
JPS59232996A true JPS59232996A (ja) 1984-12-27
JPH0328397B2 JPH0328397B2 (enrdf_load_stackoverflow) 1991-04-18

Family

ID=14388692

Family Applications (1)

Application Number Title Priority Date Filing Date
JP10473383A Granted JPS59232996A (ja) 1983-06-10 1983-06-10 単結晶引上装置

Country Status (1)

Country Link
JP (1) JPS59232996A (enrdf_load_stackoverflow)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2019043788A (ja) * 2017-08-30 2019-03-22 住友金属鉱山株式会社 単結晶育成方法及び単結晶育成装置

Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS52120290A (en) * 1976-04-02 1977-10-08 Toshiba Corp Production of gap single crystal
JPS5692191A (en) * 1979-12-25 1981-07-25 Toshiba Corp Production of single crystal and producing device using this method

Patent Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS52120290A (en) * 1976-04-02 1977-10-08 Toshiba Corp Production of gap single crystal
JPS5692191A (en) * 1979-12-25 1981-07-25 Toshiba Corp Production of single crystal and producing device using this method

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2019043788A (ja) * 2017-08-30 2019-03-22 住友金属鉱山株式会社 単結晶育成方法及び単結晶育成装置

Also Published As

Publication number Publication date
JPH0328397B2 (enrdf_load_stackoverflow) 1991-04-18

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