JPH0328397B2 - - Google Patents

Info

Publication number
JPH0328397B2
JPH0328397B2 JP58104733A JP10473383A JPH0328397B2 JP H0328397 B2 JPH0328397 B2 JP H0328397B2 JP 58104733 A JP58104733 A JP 58104733A JP 10473383 A JP10473383 A JP 10473383A JP H0328397 B2 JPH0328397 B2 JP H0328397B2
Authority
JP
Japan
Prior art keywords
melt
single crystal
heater
diameter
pulling
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
JP58104733A
Other languages
English (en)
Japanese (ja)
Other versions
JPS59232996A (ja
Inventor
Koji Tada
Tatsusuke Nakai
Shintaro Myazawa
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Nippon Telegraph and Telephone Corp
Sumitomo Electric Industries Ltd
Original Assignee
Nippon Telegraph and Telephone Corp
Sumitomo Electric Industries Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Nippon Telegraph and Telephone Corp, Sumitomo Electric Industries Ltd filed Critical Nippon Telegraph and Telephone Corp
Priority to JP10473383A priority Critical patent/JPS59232996A/ja
Publication of JPS59232996A publication Critical patent/JPS59232996A/ja
Publication of JPH0328397B2 publication Critical patent/JPH0328397B2/ja
Granted legal-status Critical Current

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B27/00—Single-crystal growth under a protective fluid
    • C30B27/02—Single-crystal growth under a protective fluid by pulling from a melt

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Materials Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)
  • Liquid Deposition Of Substances Of Which Semiconductor Devices Are Composed (AREA)
JP10473383A 1983-06-10 1983-06-10 単結晶引上装置 Granted JPS59232996A (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP10473383A JPS59232996A (ja) 1983-06-10 1983-06-10 単結晶引上装置

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP10473383A JPS59232996A (ja) 1983-06-10 1983-06-10 単結晶引上装置

Publications (2)

Publication Number Publication Date
JPS59232996A JPS59232996A (ja) 1984-12-27
JPH0328397B2 true JPH0328397B2 (enrdf_load_stackoverflow) 1991-04-18

Family

ID=14388692

Family Applications (1)

Application Number Title Priority Date Filing Date
JP10473383A Granted JPS59232996A (ja) 1983-06-10 1983-06-10 単結晶引上装置

Country Status (1)

Country Link
JP (1) JPS59232996A (enrdf_load_stackoverflow)

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP6969230B2 (ja) * 2017-08-30 2021-11-24 住友金属鉱山株式会社 単結晶育成方法及び単結晶育成装置

Family Cites Families (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5914439B2 (ja) * 1976-04-02 1984-04-04 株式会社東芝 ＧａＰ単結晶の製造方法
JPS5692191A (en) * 1979-12-25 1981-07-25 Toshiba Corp Production of single crystal and producing device using this method

Also Published As

Publication number Publication date
JPS59232996A (ja) 1984-12-27

Similar Documents

Publication Publication Date Title
US4329195A (en) Lateral pulling growth of crystal ribbons
JPS6046998A (ja) 単結晶引上方法及びそのための装置
US5069742A (en) Method and apparatus for crystal ribbon growth
CA1081586A (en) Method and apparatus for forming silicon crystalline bodies
US5055157A (en) Method of crystal ribbon growth
US3977934A (en) Silicon manufacture
JPH0669917B2 (ja) 複数段ヒ−タ−の制御方法
JPH0328397B2 (enrdf_load_stackoverflow)
US4239734A (en) Method and apparatus for forming silicon crystalline bodies
JP3018738B2 (ja) 単結晶製造装置
JPS5912636B2 (ja) リボン状単結晶の引上げ方法
JP2757865B2 (ja) ▲ｉｉｉ▼−▲ｖ▼族化合物半導体単結晶の製造方法
JP2758038B2 (ja) 単結晶製造装置
JPS644998B2 (enrdf_load_stackoverflow)
JP3042168B2 (ja) 単結晶製造装置
JPH07133185A (ja) 単結晶の製造方法
JPH0733303B2 (ja) 結晶成長装置
JP3557690B2 (ja) 結晶成長方法
JP2879078B2 (ja) 化合物半導体結晶の製造方法及びそれに用いるルツボ
JP2005200228A (ja) 化合物半導体単結晶成長方法
JPS6135563Y2 (enrdf_load_stackoverflow)
JPH0367996B2 (enrdf_load_stackoverflow)
JPH072615Y2 (ja) 化合物半導体単結晶成長装置
JPH0559880B2 (enrdf_load_stackoverflow)
JPS6229394B2 (enrdf_load_stackoverflow)