JPH0559880B2 - - Google Patents
Info
- Publication number
- JPH0559880B2 JPH0559880B2 JP28863888A JP28863888A JPH0559880B2 JP H0559880 B2 JPH0559880 B2 JP H0559880B2 JP 28863888 A JP28863888 A JP 28863888A JP 28863888 A JP28863888 A JP 28863888A JP H0559880 B2 JPH0559880 B2 JP H0559880B2
- Authority
- JP
- Japan
- Prior art keywords
- crystal
- inp
- crucible
- single crystal
- raw material
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Lifetime
Links
- 239000013078 crystal Substances 0.000 claims description 59
- 239000002994 raw material Substances 0.000 claims description 28
- 238000002844 melting Methods 0.000 claims description 20
- 230000008018 melting Effects 0.000 claims description 20
- 238000001816 cooling Methods 0.000 claims description 17
- 238000000034 method Methods 0.000 claims description 17
- 238000004519 manufacturing process Methods 0.000 claims description 8
- 239000000565 sealant Substances 0.000 claims description 4
- 239000007788 liquid Substances 0.000 claims description 2
- 239000000155 melt Substances 0.000 claims 1
- 239000012535 impurity Substances 0.000 description 7
- 230000000694 effects Effects 0.000 description 5
- 230000015572 biosynthetic process Effects 0.000 description 3
- 239000004065 semiconductor Substances 0.000 description 3
- 238000010583 slow cooling Methods 0.000 description 3
- 238000003786 synthesis reaction Methods 0.000 description 3
- 238000005303 weighing Methods 0.000 description 3
- PZNSFCLAULLKQX-UHFFFAOYSA-N Boron nitride Chemical compound N#B PZNSFCLAULLKQX-UHFFFAOYSA-N 0.000 description 2
- 150000001875 compounds Chemical class 0.000 description 2
- 230000007423 decrease Effects 0.000 description 2
- 230000007547 defect Effects 0.000 description 2
- 238000009792 diffusion process Methods 0.000 description 2
- 238000005530 etching Methods 0.000 description 2
- 238000010438 heat treatment Methods 0.000 description 2
- 238000005259 measurement Methods 0.000 description 2
- 239000010453 quartz Substances 0.000 description 2
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N silicon dioxide Inorganic materials O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 2
- 239000000758 substrate Substances 0.000 description 2
- 229910001218 Gallium arsenide Inorganic materials 0.000 description 1
- 230000003247 decreasing effect Effects 0.000 description 1
- 230000006866 deterioration Effects 0.000 description 1
- 238000009826 distribution Methods 0.000 description 1
- 238000004904 shortening Methods 0.000 description 1
- 239000007787 solid Substances 0.000 description 1
- 230000002123 temporal effect Effects 0.000 description 1
Landscapes
- Liquid Deposition Of Substances Of Which Semiconductor Devices Are Composed (AREA)
- Crystals, And After-Treatments Of Crystals (AREA)
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP28863888A JPH02133395A (ja) | 1988-11-14 | 1988-11-14 | Ｉｎｐ単結晶の製造方法 |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP28863888A JPH02133395A (ja) | 1988-11-14 | 1988-11-14 | Ｉｎｐ単結晶の製造方法 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPH02133395A JPH02133395A (ja) | 1990-05-22 |
| JPH0559880B2 true JPH0559880B2 (enrdf_load_stackoverflow) | 1993-09-01 |
Family
ID=17732758
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP28863888A Granted JPH02133395A (ja) | 1988-11-14 | 1988-11-14 | Ｉｎｐ単結晶の製造方法 |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPH02133395A (enrdf_load_stackoverflow) |
-
1988
- 1988-11-14 JP JP28863888A patent/JPH02133395A/ja active Granted
Also Published As
| Publication number | Publication date |
|---|---|
| JPH02133395A (ja) | 1990-05-22 |
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