JPS59229875A - シヨツトキ−ゲ−ト型電界効果トランジスタの製造方法 - Google Patents

シヨツトキ−ゲ−ト型電界効果トランジスタの製造方法

Info

Publication number
JPS59229875A
JPS59229875A JP58105299A JP10529983A JPS59229875A JP S59229875 A JPS59229875 A JP S59229875A JP 58105299 A JP58105299 A JP 58105299A JP 10529983 A JP10529983 A JP 10529983A JP S59229875 A JPS59229875 A JP S59229875A
Authority
JP
Japan
Prior art keywords
film
insulating film
etching
mask
electrode
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP58105299A
Other languages
English (en)
Japanese (ja)
Other versions
JPS6258154B2 (OSRAM
Inventor
Toshiyuki Terada
俊幸 寺田
Nobuyuki Toyoda
豊田　信行
Akimichi Hojo
北條　顯道
Kiyoo Kamei
清雄 亀井
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Toshiba Corp
Original Assignee
Toshiba Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Toshiba Corp filed Critical Toshiba Corp
Priority to JP58105299A priority Critical patent/JPS59229875A/ja
Publication of JPS59229875A publication Critical patent/JPS59229875A/ja
Publication of JPS6258154B2 publication Critical patent/JPS6258154B2/ja
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/80—FETs having rectifying junction gate electrodes

Landscapes

  • Drying Of Semiconductors (AREA)
  • Junction Field-Effect Transistors (AREA)
  • Electrodes Of Semiconductors (AREA)
JP58105299A 1983-06-13 1983-06-13 シヨツトキ−ゲ−ト型電界効果トランジスタの製造方法 Granted JPS59229875A (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP58105299A JPS59229875A (ja) 1983-06-13 1983-06-13 シヨツトキ−ゲ−ト型電界効果トランジスタの製造方法

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP58105299A JPS59229875A (ja) 1983-06-13 1983-06-13 シヨツトキ−ゲ−ト型電界効果トランジスタの製造方法

Publications (2)

Publication Number Publication Date
JPS59229875A true JPS59229875A (ja) 1984-12-24
JPS6258154B2 JPS6258154B2 (OSRAM) 1987-12-04

Family

ID=14403809

Family Applications (1)

Application Number Title Priority Date Filing Date
JP58105299A Granted JPS59229875A (ja) 1983-06-13 1983-06-13 シヨツトキ−ゲ−ト型電界効果トランジスタの製造方法

Country Status (1)

Country Link
JP (1) JPS59229875A (OSRAM)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS6260269A (ja) * 1985-09-10 1987-03-16 Matsushita Electric Ind Co Ltd 電界効果トランジスタの製造方法
JPS6260268A (ja) * 1985-09-10 1987-03-16 Matsushita Electric Ind Co Ltd 電界効果トランジスタの製造方法

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS6260269A (ja) * 1985-09-10 1987-03-16 Matsushita Electric Ind Co Ltd 電界効果トランジスタの製造方法
JPS6260268A (ja) * 1985-09-10 1987-03-16 Matsushita Electric Ind Co Ltd 電界効果トランジスタの製造方法

Also Published As

Publication number Publication date
JPS6258154B2 (OSRAM) 1987-12-04

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