JPS59229866A - 半導体装置 - Google Patents
半導体装置Info
- Publication number
- JPS59229866A JPS59229866A JP59053244A JP5324484A JPS59229866A JP S59229866 A JPS59229866 A JP S59229866A JP 59053244 A JP59053244 A JP 59053244A JP 5324484 A JP5324484 A JP 5324484A JP S59229866 A JPS59229866 A JP S59229866A
- Authority
- JP
- Japan
- Prior art keywords
- insulating film
- layer
- oxide film
- opening
- polycrystalline silicon
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
Classifications
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
- H10D62/80—Semiconductor bodies, or regions thereof, of devices having potential barriers characterised by the materials
- H10D62/83—Semiconductor bodies, or regions thereof, of devices having potential barriers characterised by the materials being Group IV materials, e.g. B-doped Si or undoped Ge
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D64/00—Electrodes of devices having potential barriers
- H10D64/60—Electrodes characterised by their materials
- H10D64/62—Electrodes ohmically coupled to a semiconductor
Landscapes
- Electrodes Of Semiconductors (AREA)
- Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP59053244A JPS59229866A (ja) | 1984-03-19 | 1984-03-19 | 半導体装置 |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP59053244A JPS59229866A (ja) | 1984-03-19 | 1984-03-19 | 半導体装置 |
Related Parent Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP57049797A Division JPS57172763A (en) | 1982-03-27 | 1982-03-27 | Semiconductor device |
Publications (2)
Publication Number | Publication Date |
---|---|
JPS59229866A true JPS59229866A (ja) | 1984-12-24 |
JPS627703B2 JPS627703B2 (enrdf_load_stackoverflow) | 1987-02-18 |
Family
ID=12937375
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP59053244A Granted JPS59229866A (ja) | 1984-03-19 | 1984-03-19 | 半導体装置 |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPS59229866A (enrdf_load_stackoverflow) |
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH0254566A (ja) * | 1988-08-18 | 1990-02-23 | Seiko Epson Corp | 半導体装置 |
Families Citing this family (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
KR950013785B1 (ko) * | 1991-01-21 | 1995-11-16 | 미쓰비시 뎅끼 가부시끼가이샤 | Mos형 전계효과 트랜지스터를 포함하는 반도체장치 및 그 제조방법 |
-
1984
- 1984-03-19 JP JP59053244A patent/JPS59229866A/ja active Granted
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH0254566A (ja) * | 1988-08-18 | 1990-02-23 | Seiko Epson Corp | 半導体装置 |
Also Published As
Publication number | Publication date |
---|---|
JPS627703B2 (enrdf_load_stackoverflow) | 1987-02-18 |
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