JPS59227128A - 半導体基体の酸化法 - Google Patents

半導体基体の酸化法

Info

Publication number
JPS59227128A
JPS59227128A JP58100915A JP10091583A JPS59227128A JP S59227128 A JPS59227128 A JP S59227128A JP 58100915 A JP58100915 A JP 58100915A JP 10091583 A JP10091583 A JP 10091583A JP S59227128 A JPS59227128 A JP S59227128A
Authority
JP
Japan
Prior art keywords
semiconductor substrate
oxide film
oxidizing
forming
initial
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP58100915A
Other languages
English (en)
Japanese (ja)
Other versions
JPH0223023B2 (enrdf_load_stackoverflow
Inventor
Hideo Honma
本間　秀男
Naohiro Monma
直弘 門馬
Masami Naito
正美 内藤
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Hitachi Ltd
Original Assignee
Hitachi Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Hitachi Ltd filed Critical Hitachi Ltd
Priority to JP58100915A priority Critical patent/JPS59227128A/ja
Publication of JPS59227128A publication Critical patent/JPS59227128A/ja
Publication of JPH0223023B2 publication Critical patent/JPH0223023B2/ja
Priority to JP3121917A priority patent/JPH0783019B2/ja
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02107—Forming insulating materials on a substrate
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02107—Forming insulating materials on a substrate
    • H01L21/02225—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer
    • H01L21/02227—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a process other than a deposition process
    • H01L21/0223—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a process other than a deposition process formation by oxidation, e.g. oxidation of the substrate
    • H01L21/02233—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a process other than a deposition process formation by oxidation, e.g. oxidation of the substrate of the semiconductor substrate or a semiconductor layer
    • H01L21/02236—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a process other than a deposition process formation by oxidation, e.g. oxidation of the substrate of the semiconductor substrate or a semiconductor layer group IV semiconductor
    • H01L21/02238—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a process other than a deposition process formation by oxidation, e.g. oxidation of the substrate of the semiconductor substrate or a semiconductor layer group IV semiconductor silicon in uncombined form, i.e. pure silicon
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02107—Forming insulating materials on a substrate
    • H01L21/02225—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer
    • H01L21/02227—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a process other than a deposition process
    • H01L21/02255—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a process other than a deposition process formation by thermal treatment

Landscapes

  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Formation Of Insulating Films (AREA)
  • Electrodes Of Semiconductors (AREA)
JP58100915A 1983-06-08 1983-06-08 半導体基体の酸化法 Granted JPS59227128A (ja)

Priority Applications (2)

Application Number Priority Date Filing Date Title
JP58100915A JPS59227128A (ja) 1983-06-08 1983-06-08 半導体基体の酸化法
JP3121917A JPH0783019B2 (ja) 1983-06-08 1991-04-25 半導体基体の酸化法

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP58100915A JPS59227128A (ja) 1983-06-08 1983-06-08 半導体基体の酸化法

Related Child Applications (2)

Application Number Title Priority Date Filing Date
JP3121917A Division JPH0783019B2 (ja) 1983-06-08 1991-04-25 半導体基体の酸化法
JP5016798A Division JPH0727898B2 (ja) 1993-01-08 1993-01-08 半導体基体の酸化法

Publications (2)

Publication Number Publication Date
JPS59227128A true JPS59227128A (ja) 1984-12-20
JPH0223023B2 JPH0223023B2 (enrdf_load_stackoverflow) 1990-05-22

Family

ID=14286629

Family Applications (1)

Application Number Title Priority Date Filing Date
JP58100915A Granted JPS59227128A (ja) 1983-06-08 1983-06-08 半導体基体の酸化法

Country Status (1)

Country Link
JP (1) JPS59227128A (enrdf_load_stackoverflow)

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH06244174A (ja) * 1993-08-04 1994-09-02 Tadahiro Omi 絶縁酸化膜の形成方法
JPH09251995A (ja) * 1989-05-07 1997-09-22 Tadahiro Omi 絶縁酸化膜の形成方法
US7064084B2 (en) 2001-02-28 2006-06-20 Tokyo Electron Limited Oxide film forming method

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR100343151B1 (ko) * 1999-10-28 2002-07-05 김덕중 Ｓｉｐｏｓ를 이용한 고전압 반도체소자 및 그 제조방법

Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS4870481A (enrdf_load_stackoverflow) * 1971-12-23 1973-09-25
JPS5421265A (en) * 1977-07-19 1979-02-17 Mitsubishi Electric Corp Forming method of semiconductor oxide film
JPS5447577A (en) * 1977-09-22 1979-04-14 Fujitsu Ltd Production of semiconductor device
JPS56158431A (en) * 1980-05-13 1981-12-07 Meidensha Electric Mfg Co Ltd Forming of oxidized film of semiconductor element for electric power

Patent Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS4870481A (enrdf_load_stackoverflow) * 1971-12-23 1973-09-25
JPS5421265A (en) * 1977-07-19 1979-02-17 Mitsubishi Electric Corp Forming method of semiconductor oxide film
JPS5447577A (en) * 1977-09-22 1979-04-14 Fujitsu Ltd Production of semiconductor device
JPS56158431A (en) * 1980-05-13 1981-12-07 Meidensha Electric Mfg Co Ltd Forming of oxidized film of semiconductor element for electric power

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH09251995A (ja) * 1989-05-07 1997-09-22 Tadahiro Omi 絶縁酸化膜の形成方法
JPH06244174A (ja) * 1993-08-04 1994-09-02 Tadahiro Omi 絶縁酸化膜の形成方法
US7064084B2 (en) 2001-02-28 2006-06-20 Tokyo Electron Limited Oxide film forming method

Also Published As

Publication number Publication date
JPH0223023B2 (enrdf_load_stackoverflow) 1990-05-22

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