JPS59217339A - 半導体装置の製造方法 - Google Patents

半導体装置の製造方法

Info

Publication number
JPS59217339A
JPS59217339A JP9264283A JP9264283A JPS59217339A JP S59217339 A JPS59217339 A JP S59217339A JP 9264283 A JP9264283 A JP 9264283A JP 9264283 A JP9264283 A JP 9264283A JP S59217339 A JPS59217339 A JP S59217339A
Authority
JP
Japan
Prior art keywords
film
mask material
etching
material film
mask
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP9264283A
Other languages
English (en)
Japanese (ja)
Other versions
JPH0562463B2 (OSRAM
Inventor
Ryozo Nakayama
中山　良三
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Toshiba Corp
Original Assignee
Toshiba Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Toshiba Corp filed Critical Toshiba Corp
Priority to JP9264283A priority Critical patent/JPS59217339A/ja
Publication of JPS59217339A publication Critical patent/JPS59217339A/ja
Publication of JPH0562463B2 publication Critical patent/JPH0562463B2/ja
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
    • H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
    • H01L21/76—Making of isolation regions between components
    • H01L21/762—Dielectric regions, e.g. EPIC dielectric isolation, LOCOS; Trench refilling techniques, SOI technology, use of channel stoppers
    • H01L21/76224—Dielectric regions, e.g. EPIC dielectric isolation, LOCOS; Trench refilling techniques, SOI technology, use of channel stoppers using trench refilling with dielectric materials
    • H01L21/76229—Concurrent filling of a plurality of trenches having a different trench shape or dimension, e.g. rectangular and V-shaped trenches, wide and narrow trenches, shallow and deep trenches

Landscapes

  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Drying Of Semiconductors (AREA)
  • Element Separation (AREA)
JP9264283A 1983-05-26 1983-05-26 半導体装置の製造方法 Granted JPS59217339A (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP9264283A JPS59217339A (ja) 1983-05-26 1983-05-26 半導体装置の製造方法

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP9264283A JPS59217339A (ja) 1983-05-26 1983-05-26 半導体装置の製造方法

Publications (2)

Publication Number Publication Date
JPS59217339A true JPS59217339A (ja) 1984-12-07
JPH0562463B2 JPH0562463B2 (OSRAM) 1993-09-08

Family

ID=14060101

Family Applications (1)

Application Number Title Priority Date Filing Date
JP9264283A Granted JPS59217339A (ja) 1983-05-26 1983-05-26 半導体装置の製造方法

Country Status (1)

Country Link
JP (1) JPS59217339A (OSRAM)

Cited By (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS61141171A (ja) * 1984-12-14 1986-06-28 Toshiba Corp 半導体装置の製造方法
JPH01276641A (ja) * 1988-03-24 1989-11-07 Motorola Inc 半導体デバイスの製造方法
JPH0366145A (ja) * 1989-07-28 1991-03-20 American Teleph & Telegr Co <Att> 半導体装置
JPH03148155A (ja) * 1989-10-25 1991-06-24 Internatl Business Mach Corp <Ibm> 誘電体充填分離トレンチ形成方法
JPH06177236A (ja) * 1992-08-31 1994-06-24 Hyundai Electron Ind Co Ltd トレンチ構造の素子分離膜の製造方法
KR970030214A (ko) * 1995-11-06 1997-06-26 김주용 웨이퍼 평탄화 방법

Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5320873A (en) * 1976-08-11 1978-02-25 Hitachi Ltd Semiconductor integrated circuit device

Patent Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5320873A (en) * 1976-08-11 1978-02-25 Hitachi Ltd Semiconductor integrated circuit device

Cited By (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS61141171A (ja) * 1984-12-14 1986-06-28 Toshiba Corp 半導体装置の製造方法
JPH01276641A (ja) * 1988-03-24 1989-11-07 Motorola Inc 半導体デバイスの製造方法
JPH0366145A (ja) * 1989-07-28 1991-03-20 American Teleph & Telegr Co <Att> 半導体装置
JPH03148155A (ja) * 1989-10-25 1991-06-24 Internatl Business Mach Corp <Ibm> 誘電体充填分離トレンチ形成方法
JPH06177236A (ja) * 1992-08-31 1994-06-24 Hyundai Electron Ind Co Ltd トレンチ構造の素子分離膜の製造方法
KR970030214A (ko) * 1995-11-06 1997-06-26 김주용 웨이퍼 평탄화 방법

Also Published As

Publication number Publication date
JPH0562463B2 (OSRAM) 1993-09-08

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