JPS59207665A - 半導体装置 - Google Patents

半導体装置

Info

Publication number
JPS59207665A
JPS59207665A JP58082421A JP8242183A JPS59207665A JP S59207665 A JPS59207665 A JP S59207665A JP 58082421 A JP58082421 A JP 58082421A JP 8242183 A JP8242183 A JP 8242183A JP S59207665 A JPS59207665 A JP S59207665A
Authority
JP
Japan
Prior art keywords
film
silicon nitride
nitride film
silicon
region
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP58082421A
Other languages
English (en)
Japanese (ja)
Other versions
JPS6311783B2 (enrdf_load_stackoverflow
Inventor
Tetsuo Fujii
哲夫 藤井
Toshio Sakakibara
利夫 榊原
Kenji Kanamaru
健次 金丸
Hiroyuki Yamane
山根　宏幸
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Denso Corp
Original Assignee
NipponDenso Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by NipponDenso Co Ltd filed Critical NipponDenso Co Ltd
Priority to JP58082421A priority Critical patent/JPS59207665A/ja
Publication of JPS59207665A publication Critical patent/JPS59207665A/ja
Publication of JPS6311783B2 publication Critical patent/JPS6311783B2/ja
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/68—Floating-gate IGFETs
    • H10D30/681—Floating-gate IGFETs having only two programming levels
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
    • H10D84/80—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of at least one component covered by groups H10D12/00 or H10D30/00, e.g. integration of IGFETs
    • H10D84/82—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of at least one component covered by groups H10D12/00 or H10D30/00, e.g. integration of IGFETs of only field-effect components
    • H10D84/83—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of at least one component covered by groups H10D12/00 or H10D30/00, e.g. integration of IGFETs of only field-effect components of only insulated-gate FETs [IGFET]
    • H10D84/85—Complementary IGFETs, e.g. CMOS
    • H10D84/858—Complementary IGFETs, e.g. CMOS comprising a P-type well but not an N-type well

Landscapes

  • Non-Volatile Memory (AREA)
  • Semiconductor Memories (AREA)
JP58082421A 1983-05-10 1983-05-10 半導体装置 Granted JPS59207665A (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP58082421A JPS59207665A (ja) 1983-05-10 1983-05-10 半導体装置

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP58082421A JPS59207665A (ja) 1983-05-10 1983-05-10 半導体装置

Publications (2)

Publication Number Publication Date
JPS59207665A true JPS59207665A (ja) 1984-11-24
JPS6311783B2 JPS6311783B2 (enrdf_load_stackoverflow) 1988-03-16

Family

ID=13774119

Family Applications (1)

Application Number Title Priority Date Filing Date
JP58082421A Granted JPS59207665A (ja) 1983-05-10 1983-05-10 半導体装置

Country Status (1)

Country Link
JP (1) JPS59207665A (enrdf_load_stackoverflow)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS61136274A (ja) * 1984-12-07 1986-06-24 Toshiba Corp 半導体装置

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS61136274A (ja) * 1984-12-07 1986-06-24 Toshiba Corp 半導体装置

Also Published As

Publication number Publication date
JPS6311783B2 (enrdf_load_stackoverflow) 1988-03-16

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