JPS59194423A - 半導体結晶層の製造方法 - Google Patents

半導体結晶層の製造方法

Info

Publication number
JPS59194423A
JPS59194423A JP58068391A JP6839183A JPS59194423A JP S59194423 A JPS59194423 A JP S59194423A JP 58068391 A JP58068391 A JP 58068391A JP 6839183 A JP6839183 A JP 6839183A JP S59194423 A JPS59194423 A JP S59194423A
Authority
JP
Japan
Prior art keywords
film
semiconductor
semiconductor film
crystal
center
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP58068391A
Other languages
English (en)
Japanese (ja)
Other versions
JPH0236050B2 (enExample
Inventor
Koichi Kato
弘一 加藤
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
National Institute of Advanced Industrial Science and Technology AIST
Original Assignee
Agency of Industrial Science and Technology
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Agency of Industrial Science and Technology filed Critical Agency of Industrial Science and Technology
Priority to JP58068391A priority Critical patent/JPS59194423A/ja
Publication of JPS59194423A publication Critical patent/JPS59194423A/ja
Publication of JPH0236050B2 publication Critical patent/JPH0236050B2/ja
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/20—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials
    • H10P14/32—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials characterised by intermediate layers between substrates and deposited layers
    • H10P14/3202—Materials thereof
    • H10P14/3238—Materials thereof being insulating materials
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/20—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials
    • H10P14/38—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials characterised by treatments done after the formation of the materials
    • H10P14/3802—Crystallisation or recrystallisation of non-monocrystalline semiconductor materials, e.g. regrowth
    • H10P14/382—Scanning of a beam
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/20—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials
    • H10P14/29—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials characterised by the substrates
    • H10P14/2901—Materials
    • H10P14/2902—Materials being Group IVA materials
    • H10P14/2905—Silicon, silicon germanium or germanium
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/20—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials
    • H10P14/34—Deposited materials, e.g. layers
    • H10P14/3402—Deposited materials, e.g. layers characterised by the chemical composition
    • H10P14/3404—Deposited materials, e.g. layers characterised by the chemical composition being Group IVA materials
    • H10P14/3411—Silicon, silicon germanium or germanium
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/20—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials
    • H10P14/34—Deposited materials, e.g. layers
    • H10P14/3451—Structure
    • H10P14/3452—Microstructure
    • H10P14/3458—Monocrystalline
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/20—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials
    • H10P14/38—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials characterised by treatments done after the formation of the materials
    • H10P14/3802—Crystallisation or recrystallisation of non-monocrystalline semiconductor materials, e.g. regrowth
    • H10P14/3818—Crystallisation or recrystallisation of non-monocrystalline semiconductor materials, e.g. regrowth using particle beams

Landscapes

  • Recrystallisation Techniques (AREA)
JP58068391A 1983-04-20 1983-04-20 半導体結晶層の製造方法 Granted JPS59194423A (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP58068391A JPS59194423A (ja) 1983-04-20 1983-04-20 半導体結晶層の製造方法

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP58068391A JPS59194423A (ja) 1983-04-20 1983-04-20 半導体結晶層の製造方法

Publications (2)

Publication Number Publication Date
JPS59194423A true JPS59194423A (ja) 1984-11-05
JPH0236050B2 JPH0236050B2 (enExample) 1990-08-15

Family

ID=13372359

Family Applications (1)

Application Number Title Priority Date Filing Date
JP58068391A Granted JPS59194423A (ja) 1983-04-20 1983-04-20 半導体結晶層の製造方法

Country Status (1)

Country Link
JP (1) JPS59194423A (enExample)

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5175123A (en) * 1990-11-13 1992-12-29 Motorola, Inc. High-pressure polysilicon encapsulated localized oxidation of silicon
US5580815A (en) * 1993-08-12 1996-12-03 Motorola Inc. Process for forming field isolation and a structure over a semiconductor substrate
US6083810A (en) * 1993-11-15 2000-07-04 Lucent Technologies Integrated circuit fabrication process
JP2008141046A (ja) * 2006-12-04 2008-06-19 Semiconductor Energy Lab Co Ltd 半導体膜の結晶化方法、および半導体装置の作製方法

Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5749225A (en) * 1980-09-09 1982-03-23 Fujitsu Ltd Single-crystallizing method for non-single crystalline semiconductor layer
JPS5814524A (ja) * 1981-07-17 1983-01-27 Fujitsu Ltd 半導体装置の製造方法
JPS5821319A (ja) * 1981-07-30 1983-02-08 Fujitsu Ltd レ−ザアニ−ル方法

Patent Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5749225A (en) * 1980-09-09 1982-03-23 Fujitsu Ltd Single-crystallizing method for non-single crystalline semiconductor layer
JPS5814524A (ja) * 1981-07-17 1983-01-27 Fujitsu Ltd 半導体装置の製造方法
JPS5821319A (ja) * 1981-07-30 1983-02-08 Fujitsu Ltd レ−ザアニ−ル方法

Cited By (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5175123A (en) * 1990-11-13 1992-12-29 Motorola, Inc. High-pressure polysilicon encapsulated localized oxidation of silicon
USRE35294E (en) * 1990-11-13 1996-07-09 Motorola, Inc. Polysilicon encapsulated localized oxidation of silicon
US5580815A (en) * 1993-08-12 1996-12-03 Motorola Inc. Process for forming field isolation and a structure over a semiconductor substrate
US5707889A (en) * 1993-08-12 1998-01-13 Motorola Inc. Process for forming field isolation
US6083810A (en) * 1993-11-15 2000-07-04 Lucent Technologies Integrated circuit fabrication process
JP2008141046A (ja) * 2006-12-04 2008-06-19 Semiconductor Energy Lab Co Ltd 半導体膜の結晶化方法、および半導体装置の作製方法

Also Published As

Publication number Publication date
JPH0236050B2 (enExample) 1990-08-15

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