JPH0371767B2 - - Google Patents

Info

Publication number
JPH0371767B2
JPH0371767B2 JP57226526A JP22652682A JPH0371767B2 JP H0371767 B2 JPH0371767 B2 JP H0371767B2 JP 57226526 A JP57226526 A JP 57226526A JP 22652682 A JP22652682 A JP 22652682A JP H0371767 B2 JPH0371767 B2 JP H0371767B2
Authority
JP
Japan
Prior art keywords
thin film
electron beam
soi
substrate
sample
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
JP57226526A
Other languages
English (en)
Japanese (ja)
Other versions
JPS59119717A (ja
Inventor
Shuichi Saito
Kohei Higuchi
Hidekazu Okabayashi
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
National Institute of Advanced Industrial Science and Technology AIST
Original Assignee
Agency of Industrial Science and Technology
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Agency of Industrial Science and Technology filed Critical Agency of Industrial Science and Technology
Priority to JP57226526A priority Critical patent/JPS59119717A/ja
Publication of JPS59119717A publication Critical patent/JPS59119717A/ja
Publication of JPH0371767B2 publication Critical patent/JPH0371767B2/ja
Granted legal-status Critical Current

Links

Classifications

    • H10P14/3238—
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02656—Special treatments
    • H01L21/02664—Aftertreatments
    • H01L21/02667—Crystallisation or recrystallisation of non-monocrystalline semiconductor materials, e.g. regrowth
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02518—Deposited layers
    • H01L21/02587—Structure
    • H01L21/0259—Microstructure
    • H01L21/02598—Microstructure monocrystalline
    • H10P14/2905—
    • H10P14/3244—
    • H10P14/3411—
    • H10P14/3458—
    • H10P14/3808—
    • H10P14/3818—
    • H10P14/382—

Landscapes

  • Engineering & Computer Science (AREA)
  • Chemical & Material Sciences (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Recrystallisation Techniques (AREA)
JP57226526A 1982-12-25 1982-12-25 単結晶半導体薄膜の製造方法 Granted JPS59119717A (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP57226526A JPS59119717A (ja) 1982-12-25 1982-12-25 単結晶半導体薄膜の製造方法

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP57226526A JPS59119717A (ja) 1982-12-25 1982-12-25 単結晶半導体薄膜の製造方法

Publications (2)

Publication Number Publication Date
JPS59119717A JPS59119717A (ja) 1984-07-11
JPH0371767B2 true JPH0371767B2 (enExample) 1991-11-14

Family

ID=16846505

Family Applications (1)

Application Number Title Priority Date Filing Date
JP57226526A Granted JPS59119717A (ja) 1982-12-25 1982-12-25 単結晶半導体薄膜の製造方法

Country Status (1)

Country Link
JP (1) JPS59119717A (enExample)

Families Citing this family (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS61201415A (ja) * 1985-03-02 1986-09-06 Agency Of Ind Science & Technol 半導体単結晶層の製造方法
JPS61251114A (ja) * 1985-04-30 1986-11-08 Ricoh Co Ltd 単結晶シリコン膜の製造方法

Also Published As

Publication number Publication date
JPS59119717A (ja) 1984-07-11

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