JPS59194423A - 半導体結晶層の製造方法 - Google Patents
半導体結晶層の製造方法Info
- Publication number
- JPS59194423A JPS59194423A JP58068391A JP6839183A JPS59194423A JP S59194423 A JPS59194423 A JP S59194423A JP 58068391 A JP58068391 A JP 58068391A JP 6839183 A JP6839183 A JP 6839183A JP S59194423 A JPS59194423 A JP S59194423A
- Authority
- JP
- Japan
- Prior art keywords
- film
- semiconductor
- semiconductor film
- crystal
- center
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 239000004065 semiconductor Substances 0.000 title claims abstract description 52
- 239000013078 crystal Substances 0.000 title claims abstract description 33
- 238000004519 manufacturing process Methods 0.000 title claims description 9
- 239000000758 substrate Substances 0.000 claims abstract description 9
- 238000000034 method Methods 0.000 claims description 19
- 230000002093 peripheral effect Effects 0.000 claims description 4
- 230000008018 melting Effects 0.000 claims description 2
- 238000002844 melting Methods 0.000 claims description 2
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 abstract description 14
- 229910052710 silicon Inorganic materials 0.000 abstract description 12
- 239000010703 silicon Substances 0.000 abstract description 12
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 abstract description 11
- 238000010894 electron beam technology Methods 0.000 abstract description 8
- 229910052681 coesite Inorganic materials 0.000 abstract description 7
- 229910052906 cristobalite Inorganic materials 0.000 abstract description 7
- 239000000377 silicon dioxide Substances 0.000 abstract description 7
- 235000012239 silicon dioxide Nutrition 0.000 abstract description 7
- 229910052682 stishovite Inorganic materials 0.000 abstract description 7
- 229910052905 tridymite Inorganic materials 0.000 abstract description 7
- 229910021417 amorphous silicon Inorganic materials 0.000 abstract description 6
- 229910021421 monocrystalline silicon Inorganic materials 0.000 abstract description 3
- 230000003247 decreasing effect Effects 0.000 abstract description 2
- 238000002955 isolation Methods 0.000 abstract description 2
- 230000001681 protective effect Effects 0.000 abstract description 2
- 239000010410 layer Substances 0.000 description 15
- 238000000137 annealing Methods 0.000 description 6
- 238000010586 diagram Methods 0.000 description 3
- 239000012212 insulator Substances 0.000 description 3
- 230000001678 irradiating effect Effects 0.000 description 3
- 239000007791 liquid phase Substances 0.000 description 3
- 230000010354 integration Effects 0.000 description 2
- 239000007788 liquid Substances 0.000 description 2
- 230000006911 nucleation Effects 0.000 description 2
- 238000010899 nucleation Methods 0.000 description 2
- 239000002356 single layer Substances 0.000 description 2
- 239000007790 solid phase Substances 0.000 description 2
- 230000001133 acceleration Effects 0.000 description 1
- 238000009792 diffusion process Methods 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 239000011229 interlayer Substances 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 229910021420 polycrystalline silicon Inorganic materials 0.000 description 1
- 150000003376 silicon Chemical class 0.000 description 1
- 208000024891 symptom Diseases 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02436—Intermediate layers between substrates and deposited layers
- H01L21/02439—Materials
- H01L21/02488—Insulating materials
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02656—Special treatments
- H01L21/02664—Aftertreatments
- H01L21/02667—Crystallisation or recrystallisation of non-monocrystalline semiconductor materials, e.g. regrowth
- H01L21/02691—Scanning of a beam
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02367—Substrates
- H01L21/0237—Materials
- H01L21/02373—Group 14 semiconducting materials
- H01L21/02381—Silicon, silicon germanium, germanium
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02518—Deposited layers
- H01L21/02521—Materials
- H01L21/02524—Group 14 semiconducting materials
- H01L21/02532—Silicon, silicon germanium, germanium
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02518—Deposited layers
- H01L21/02587—Structure
- H01L21/0259—Microstructure
- H01L21/02598—Microstructure monocrystalline
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02656—Special treatments
- H01L21/02664—Aftertreatments
- H01L21/02667—Crystallisation or recrystallisation of non-monocrystalline semiconductor materials, e.g. regrowth
- H01L21/02689—Crystallisation or recrystallisation of non-monocrystalline semiconductor materials, e.g. regrowth using particle beams
Landscapes
- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Chemical & Material Sciences (AREA)
- Crystallography & Structural Chemistry (AREA)
- Materials Engineering (AREA)
- Recrystallisation Techniques (AREA)
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP58068391A JPS59194423A (ja) | 1983-04-20 | 1983-04-20 | 半導体結晶層の製造方法 |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP58068391A JPS59194423A (ja) | 1983-04-20 | 1983-04-20 | 半導体結晶層の製造方法 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS59194423A true JPS59194423A (ja) | 1984-11-05 |
| JPH0236050B2 JPH0236050B2 (enrdf_load_stackoverflow) | 1990-08-15 |
Family
ID=13372359
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP58068391A Granted JPS59194423A (ja) | 1983-04-20 | 1983-04-20 | 半導体結晶層の製造方法 |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS59194423A (enrdf_load_stackoverflow) |
Cited By (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US5175123A (en) * | 1990-11-13 | 1992-12-29 | Motorola, Inc. | High-pressure polysilicon encapsulated localized oxidation of silicon |
| US5580815A (en) * | 1993-08-12 | 1996-12-03 | Motorola Inc. | Process for forming field isolation and a structure over a semiconductor substrate |
| US6083810A (en) * | 1993-11-15 | 2000-07-04 | Lucent Technologies | Integrated circuit fabrication process |
| JP2008141046A (ja) * | 2006-12-04 | 2008-06-19 | Semiconductor Energy Lab Co Ltd | 半導体膜の結晶化方法、および半導体装置の作製方法 |
Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS5749225A (en) * | 1980-09-09 | 1982-03-23 | Fujitsu Ltd | Single-crystallizing method for non-single crystalline semiconductor layer |
| JPS5814524A (ja) * | 1981-07-17 | 1983-01-27 | Fujitsu Ltd | 半導体装置の製造方法 |
| JPS5821319A (ja) * | 1981-07-30 | 1983-02-08 | Fujitsu Ltd | レ−ザアニ−ル方法 |
-
1983
- 1983-04-20 JP JP58068391A patent/JPS59194423A/ja active Granted
Patent Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS5749225A (en) * | 1980-09-09 | 1982-03-23 | Fujitsu Ltd | Single-crystallizing method for non-single crystalline semiconductor layer |
| JPS5814524A (ja) * | 1981-07-17 | 1983-01-27 | Fujitsu Ltd | 半導体装置の製造方法 |
| JPS5821319A (ja) * | 1981-07-30 | 1983-02-08 | Fujitsu Ltd | レ−ザアニ−ル方法 |
Cited By (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US5175123A (en) * | 1990-11-13 | 1992-12-29 | Motorola, Inc. | High-pressure polysilicon encapsulated localized oxidation of silicon |
| USRE35294E (en) * | 1990-11-13 | 1996-07-09 | Motorola, Inc. | Polysilicon encapsulated localized oxidation of silicon |
| US5580815A (en) * | 1993-08-12 | 1996-12-03 | Motorola Inc. | Process for forming field isolation and a structure over a semiconductor substrate |
| US5707889A (en) * | 1993-08-12 | 1998-01-13 | Motorola Inc. | Process for forming field isolation |
| US6083810A (en) * | 1993-11-15 | 2000-07-04 | Lucent Technologies | Integrated circuit fabrication process |
| JP2008141046A (ja) * | 2006-12-04 | 2008-06-19 | Semiconductor Energy Lab Co Ltd | 半導体膜の結晶化方法、および半導体装置の作製方法 |
Also Published As
| Publication number | Publication date |
|---|---|
| JPH0236050B2 (enrdf_load_stackoverflow) | 1990-08-15 |
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