JPS59191388A - 半導体装置 - Google Patents

半導体装置

Info

Publication number
JPS59191388A
JPS59191388A JP58064439A JP6443983A JPS59191388A JP S59191388 A JPS59191388 A JP S59191388A JP 58064439 A JP58064439 A JP 58064439A JP 6443983 A JP6443983 A JP 6443983A JP S59191388 A JPS59191388 A JP S59191388A
Authority
JP
Japan
Prior art keywords
light
conductor
semiconductor device
package
glass substrate
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP58064439A
Other languages
English (en)
Inventor
Hideo Tsujikawa
辻河　秀雄
Kunio Murashige
村重　邦夫
Yoshitaka Kitajima
北島　由登
Kentaro Tanaka
健太郎 田中
Mikio Naoi
直井　幹雄
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Victor Company of Japan Ltd
Nippon Victor KK
Original Assignee
Victor Company of Japan Ltd
Nippon Victor KK
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Victor Company of Japan Ltd, Nippon Victor KK filed Critical Victor Company of Japan Ltd
Priority to JP58064439A priority Critical patent/JPS59191388A/ja
Publication of JPS59191388A publication Critical patent/JPS59191388A/ja
Pending legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/02—Details
    • H01L31/0203—Containers; Encapsulations, e.g. encapsulation of photodiodes
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
    • H01L24/93—Batch processes
    • H01L24/95—Batch processes at chip-level, i.e. with connecting carried out on a plurality of singulated devices, i.e. on diced chips
    • H01L24/97—Batch processes at chip-level, i.e. with connecting carried out on a plurality of singulated devices, i.e. on diced chips the devices being connected to a common substrate, e.g. interposer, said common substrate being separable into individual assemblies after connecting
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L25/00—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof
    • H01L25/03—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes
    • H01L25/04—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers
    • H01L25/075—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers the devices being of a type provided for in group H01L33/00
    • H01L25/0753—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers the devices being of a type provided for in group H01L33/00 the devices being arranged next to each other
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/481—Disposition
    • H01L2224/48151—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
    • H01L2224/48221—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
    • H01L2224/48225—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation
    • H01L2224/48227—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation connecting the wire to a bond pad of the item
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/484—Connecting portions
    • H01L2224/48463—Connecting portions the connecting portion on the bonding area of the semiconductor or solid-state body being a ball bond
    • H01L2224/48465—Connecting portions the connecting portion on the bonding area of the semiconductor or solid-state body being a ball bond the other connecting portion not on the bonding area being a wedge bond, i.e. ball-to-wedge, regular stitch
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/15—Details of package parts other than the semiconductor or other solid state devices to be connected
    • H01L2924/181—Encapsulation
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
    • H01L33/52—Encapsulations
    • H01L33/56—Materials, e.g. epoxy or silicone resin
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
    • H01L33/62—Arrangements for conducting electric current to or from the semiconductor body, e.g. lead-frames, wire-bonds or solder balls

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Computer Hardware Design (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Electromagnetism (AREA)
  • Led Device Packages (AREA)
  • Light Receiving Elements (AREA)

Abstract

(57)【要約】本公報は電子出願前の出願データであるた
め要約のデータは記録されません。

Description

【発明の詳細な説明】 本発明は、特にリードレスタイプの半導体装置に係り、
発光素子又は受光素子を内蔵するパッケージを・、・・
ンダ付は時における耐熱性があり、かつ熱膨張係数が同
じで、さらに少なくとも一方が透明な素材で構成したパ
ッケージ半休同士を接着構成するものとし、このパッケ
ージ半休同士の片方の接合面には所定パターンの導体を
設け、きらにこの導体に接続される導体をパッケージ外
面に設けたものとしておくことによシ、チップ抵抗、チ
ップコンテンサー、ミニモールドトランジスタと同じよ
うに高密度で、充分な信頼性をもって実装できる半導体
装置を提供することを目的とする。
限られたスペースに、発光素子、受光素子あるいはこれ
らの複合体を配置するに際して、従来の半導体装置では
大きすぎたり、あるいはリード端子が長かったりして、
アセンブリー上著しく不都合であったり、設計に著しい
制約をはだしている。
このような欠点をなくす為には、それぞれの半導体装置
の中のチップを直接マウントし、ワイヤーボンディング
しなければならず、このような点から、最近、スルーホ
ール型のセラミック基板にチップをマウントし、ワイヤ
ーボンティングしだ後、チップを覆うようにエポキシ樹
脂をコーティングしたリードレスタイプの半導体装置が
提案されているが、この半導体装置は、ハンダ付は時に
際してエポキシ樹脂部分に亀裂が起きたシする等、アセ
ンブリーに際して不都合が起きている。
本発明は手記欠点を除去したものであり、以−トその実
施例について説明する。
第１図〜第４図は、本発明に係る半導体装置の１実施例
の製造工程説明図である。
すなわち、第１図に示す如く、例えばソーダガラス等の
ように、アセンブリ一時のハンダ付けに際しての温度に
対して耐熱性があり、かつ透明なガラス基板ｊ上に、所
定の導体パターン２を印刷し、焼成する。そして、この
導体パターン２十に、発光素子又は受光素子のチップ３
をグイマウントし、ワイヤーボンティングする。
又、第２図に示す如く、上記ガラスと同じ素材のガラス
基板４に対して、フォトリングラフィを用いであるいは
超音波加工のようなメカニカル加圧によって、ガラス基
板１上に設けられたチップ３等を収容することのできる
キャビティ５を形成する。その後、キャビティ５の形成
きれた側のガラス基板４の平坦面に、低融点ガラス６を
コートし２、乾燥する。
その後、上記のようにして得られたガラス基板１と４ど
を、チップ３等がキャビティ５に収容されるように接合
し、低融点ガラス６によって両者を融着し、この複合体
を、例えば第１図中一点鎖線で示す仮想線に沿って切断
し、この切断面に、例えば錫を蒸着形成し、その後この
錫を酸化させて、酸化錫の導体部７を構成する（第３図
）。同、錫の蒸着形成時に、この錫の膜は導体パターン
２に接続されているが、錫の酸化工程時に酸化された錫
がガラス層内にシンタリングでれ、導体部７と導体パタ
ーン２との電気的接続は一層確実になり、かつ導体部７
は剥離しにくくなる。そして、この導体部７上に、ハン
ダ層８を設け、その後必要に応じてチップ３毎に切断し
て、第４図に示すリードレスタイプの半導体装置９とす
る。
すなわち、この半導体装置９は、例えばソーダガラスに
よって発光素子又は受光素子がフラットパッケージされ
たものであって、その外面には発光素子又は受光素子に
接続された導体部が設けられているものであり、このよ
うに構成しておくことによってこの半導体装置をアセン
ブリーする場合には簡単に行なえ、゛アセンブリーに支
障はなく、特にアセンブリ一時に発光素子又は受光素子
を覆っているパッケージに損傷が起きることもない。。
尚、上記半導体装置において、発光素子又は受光素子に
至る光路部のガラス基板面を超音波加工等によってレン
ズ状に形成しておけば、半導体装置の性能は一層向上す
る。
又、第４図に示すようなチップ毎の切断したものでなく
、第３図の状態で導体部７をメカニカル手段若しくはエ
ノチンダによって切断するようにしたま寸でもよい。
父、手記実施例においては、半導体装置のパッケージに
は発光素子又は受光素子のみが内蔵きれている場合を述
べたが、発光素子と受光素子を共に内蔵するようにして
いてもよく、さらにはこれ１つの暑く子を駆動する為の
回路素子あるいは増巾等の信号処理をする為の回路素子
をも内蔵するようにしていてもよい。
子連の如く、本発明に係る半導体装置は、耐熱性があり
、かつ熱膨張係数がほぼ同じで、さらに少なくとも一方
が透明な素材で構成されたパッケージ半休同士を接合し
たパッケージに、発光素子又は受光素子が内蔵され、前
記パッケージ半休同士の接合面部に所定の導体パターン
が形成され、この導体パターンに接続きれた導体がパッ
ケージ外面に設けられてなるので、このような半導体装
置はリードレスタイプのものとなり、アセ／プリ′−が
極めて容易となり、しかもアセンブリ一時に半導体装置
を損傷するといったこともなく、充分な信頼性をもって
実装できる等の特長を有する。
【図面の簡単な説明】
第１図〜第４図は、本発明に係る半導体装置の製造工程
説明図である。 １．４・・・ガラス基板、２・・・導体パターン、３・
・発光素子又は受光素子のチップ、５・・・キャビティ
、６・・・低融点ガラス、７・・・導体部、８・・ハン
ダ層、９・・半導体装置。 特許出願人　　日本ビクター株式会（イ、１；・１ 代　理　人　　宇　　高　　克　　己。

Claims (1)

    【特許請求の範囲】
  1. 耐熱性があり、かつ熱膨張係数がほぼ同じで、さらに少
    なくとも一方が透明な素材で構成されたパッケージ半休
    同士を接合したパッケージに、発光素子又は受光素子が
    内蔵され、前記パッケージ半休同士の接合面部に所定の
    導体パターンが形成され、この導体パターンに接続烙れ
    た導体がパッケージ外面に設けられたことを特徴とする
    半導体装置。
JP58064439A 1983-04-14 1983-04-14 半導体装置 Pending JPS59191388A (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP58064439A JPS59191388A (ja) 1983-04-14 1983-04-14 半導体装置

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP58064439A JPS59191388A (ja) 1983-04-14 1983-04-14 半導体装置

Publications (1)

Publication Number Publication Date
JPS59191388A true JPS59191388A (ja) 1984-10-30

Family

ID=13258309

Family Applications (1)

Application Number Title Priority Date Filing Date
JP58064439A Pending JPS59191388A (ja) 1983-04-14 1983-04-14 半導体装置

Country Status (1)

Country Link
JP (1) JPS59191388A (ja)

Cited By (30)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH0391255A (ja) * 1989-09-01 1991-04-16 Fujitsu Ltd 気密封止型デバイスの製造方法
WO2005114750A1 (en) * 2004-05-13 2005-12-01 Micron Technology, Inc. Covers for microelectronic imagers and methods for wafer-level packaging of microelectronic imagers
EP1603170A1 (en) * 2003-03-10 2005-12-07 Toyoda Gosei Co., Ltd. Solid element device and method for manufacture thereof
US7115961B2 (en) 2004-08-24 2006-10-03 Micron Technology, Inc. Packaged microelectronic imaging devices and methods of packaging microelectronic imaging devices
WO2006117710A1 (en) * 2005-04-29 2006-11-09 Koninklijke Philips Electronics N.V. Light source with glass housing
US7189954B2 (en) 2004-07-19 2007-03-13 Micron Technology, Inc. Microelectronic imagers with optical devices and methods of manufacturing such microelectronic imagers
US7190039B2 (en) 2005-02-18 2007-03-13 Micron Technology, Inc. Microelectronic imagers with shaped image sensors and methods for manufacturing microelectronic imagers
US7199439B2 (en) 2004-06-14 2007-04-03 Micron Technology, Inc. Microelectronic imagers and methods of packaging microelectronic imagers
US7223626B2 (en) 2004-08-19 2007-05-29 Micron Technology, Inc. Spacers for packaged microelectronic imagers and methods of making and using spacers for wafer-level packaging of imagers
US7253397B2 (en) 2004-02-23 2007-08-07 Micron Technology, Inc. Packaged microelectronic imagers and methods of packaging microelectronic imagers
US7253390B2 (en) 2004-06-14 2007-08-07 Micron Technology, Inc. Methods for packaging microelectronic imagers
US7253957B2 (en) 2004-05-13 2007-08-07 Micron Technology, Inc. Integrated optics units and methods of manufacturing integrated optics units for use with microelectronic imagers
US7271482B2 (en) 2004-12-30 2007-09-18 Micron Technology, Inc. Methods for forming interconnects in microelectronic workpieces and microelectronic workpieces formed using such methods
US7276393B2 (en) 2004-08-26 2007-10-02 Micron Technology, Inc. Microelectronic imaging units and methods of manufacturing microelectronic imaging units
US7288757B2 (en) 2005-09-01 2007-10-30 Micron Technology, Inc. Microelectronic imaging devices and associated methods for attaching transmissive elements
US7294897B2 (en) 2004-06-29 2007-11-13 Micron Technology, Inc. Packaged microelectronic imagers and methods of packaging microelectronic imagers
US7300857B2 (en) 2004-09-02 2007-11-27 Micron Technology, Inc. Through-wafer interconnects for photoimager and memory wafers
US7303931B2 (en) 2005-02-10 2007-12-04 Micron Technology, Inc. Microfeature workpieces having microlenses and methods of forming microlenses on microfeature workpieces
US7321455B2 (en) 2003-09-18 2008-01-22 Micron Technology, Inc. Microelectronic devices and methods for packaging microelectronic devices
US7397066B2 (en) 2004-08-19 2008-07-08 Micron Technology, Inc. Microelectronic imagers with curved image sensors and methods for manufacturing microelectronic imagers
US7402453B2 (en) 2004-07-28 2008-07-22 Micron Technology, Inc. Microelectronic imaging units and methods of manufacturing microelectronic imaging units
US7416913B2 (en) 2004-07-16 2008-08-26 Micron Technology, Inc. Methods of manufacturing microelectronic imaging units with discrete standoffs
US7429494B2 (en) 2004-08-24 2008-09-30 Micron Technology, Inc. Microelectronic imagers with optical devices having integral reference features and methods for manufacturing such microelectronic imagers
US7498647B2 (en) 2004-06-10 2009-03-03 Micron Technology, Inc. Packaged microelectronic imagers and methods of packaging microelectronic imagers
US7511262B2 (en) 2004-08-30 2009-03-31 Micron Technology, Inc. Optical device and assembly for use with imaging dies, and wafer-label imager assembly
US7547877B2 (en) 2004-08-30 2009-06-16 Micron Technology, Inc. Microelectronic imagers with integrated optical devices and methods for manufacturing such microelectronic imagers
US7583862B2 (en) 2003-11-26 2009-09-01 Aptina Imaging Corporation Packaged microelectronic imagers and methods of packaging microelectronic imagers
US7646075B2 (en) 2004-08-31 2010-01-12 Micron Technology, Inc. Microelectronic imagers having front side contacts
JP2011077491A (ja) * 2009-03-26 2011-04-14 Toyoda Gosei Co Ltd Ｌｅｄランプの製造方法
US9293367B2 (en) 2005-06-28 2016-03-22 Micron Technology, Inc. Conductive interconnect structures and formation methods using supercritical fluids

Cited By (53)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH0391255A (ja) * 1989-09-01 1991-04-16 Fujitsu Ltd 気密封止型デバイスの製造方法
US7824937B2 (en) 2003-03-10 2010-11-02 Toyoda Gosei Co., Ltd. Solid element device and method for manufacturing the same
EP2596948A3 (en) * 2003-03-10 2017-03-15 Toyoda Gosei Co., Ltd. Method of making a semiconductor device
EP1603170A1 (en) * 2003-03-10 2005-12-07 Toyoda Gosei Co., Ltd. Solid element device and method for manufacture thereof
EP1603170A4 (en) * 2003-03-10 2010-09-22 Toyoda Gosei Kk SOLID ELEMENT DEVICE AND METHOD FOR PRODUCING SAME
US8685766B2 (en) 2003-03-10 2014-04-01 Toyoda Gosei Co., Ltd. Solid element device and method for manufacturing the same
US8154047B2 (en) 2003-03-10 2012-04-10 Toyoda Gosei Co., Ltd. Solid element device and method for manufacturing the same
US7321455B2 (en) 2003-09-18 2008-01-22 Micron Technology, Inc. Microelectronic devices and methods for packaging microelectronic devices
US7583862B2 (en) 2003-11-26 2009-09-01 Aptina Imaging Corporation Packaged microelectronic imagers and methods of packaging microelectronic imagers
US7253397B2 (en) 2004-02-23 2007-08-07 Micron Technology, Inc. Packaged microelectronic imagers and methods of packaging microelectronic imagers
US8092734B2 (en) 2004-05-13 2012-01-10 Aptina Imaging Corporation Covers for microelectronic imagers and methods for wafer-level packaging of microelectronics imagers
WO2005114750A1 (en) * 2004-05-13 2005-12-01 Micron Technology, Inc. Covers for microelectronic imagers and methods for wafer-level packaging of microelectronic imagers
US7253957B2 (en) 2004-05-13 2007-08-07 Micron Technology, Inc. Integrated optics units and methods of manufacturing integrated optics units for use with microelectronic imagers
US7498647B2 (en) 2004-06-10 2009-03-03 Micron Technology, Inc. Packaged microelectronic imagers and methods of packaging microelectronic imagers
US8703518B2 (en) 2004-06-10 2014-04-22 Micron Technology, Inc. Packaged microelectronic imagers and methods of packaging microelectronic imagers
US8035179B2 (en) 2004-06-10 2011-10-11 Micron Technology, Inc. Packaged microelectronic imagers and methods of packaging microelectronic imagers
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