JPS59191351A - 半導体装置における素子間分離酸化膜の形成方法 - Google Patents

半導体装置における素子間分離酸化膜の形成方法

Info

Publication number
JPS59191351A
JPS59191351A JP6652183A JP6652183A JPS59191351A JP S59191351 A JPS59191351 A JP S59191351A JP 6652183 A JP6652183 A JP 6652183A JP 6652183 A JP6652183 A JP 6652183A JP S59191351 A JPS59191351 A JP S59191351A
Authority
JP
Japan
Prior art keywords
oxide film
film
element isolation
recess
resist material
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP6652183A
Other languages
English (en)
Japanese (ja)
Other versions
JPS6339103B2 (enrdf_load_html_response
Inventor
Yaichiro Watakabe
渡壁　弥一郎
Takayuki Matsukawa
隆行 松川
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Mitsubishi Electric Corp
Original Assignee
Mitsubishi Electric Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Mitsubishi Electric Corp filed Critical Mitsubishi Electric Corp
Priority to JP6652183A priority Critical patent/JPS59191351A/ja
Publication of JPS59191351A publication Critical patent/JPS59191351A/ja
Publication of JPS6339103B2 publication Critical patent/JPS6339103B2/ja
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
    • H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
    • H01L21/76—Making of isolation regions between components
    • H01L21/762—Dielectric regions, e.g. EPIC dielectric isolation, LOCOS; Trench refilling techniques, SOI technology, use of channel stoppers
    • H01L21/76202—Dielectric regions, e.g. EPIC dielectric isolation, LOCOS; Trench refilling techniques, SOI technology, use of channel stoppers using a local oxidation of silicon, e.g. LOCOS, SWAMI, SILO
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
    • H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
    • H01L21/76—Making of isolation regions between components
    • H01L21/762—Dielectric regions, e.g. EPIC dielectric isolation, LOCOS; Trench refilling techniques, SOI technology, use of channel stoppers
    • H01L21/76224—Dielectric regions, e.g. EPIC dielectric isolation, LOCOS; Trench refilling techniques, SOI technology, use of channel stoppers using trench refilling with dielectric materials

Landscapes

  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Local Oxidation Of Silicon (AREA)
  • Element Separation (AREA)
  • Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
JP6652183A 1983-04-13 1983-04-13 半導体装置における素子間分離酸化膜の形成方法 Granted JPS59191351A (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP6652183A JPS59191351A (ja) 1983-04-13 1983-04-13 半導体装置における素子間分離酸化膜の形成方法

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP6652183A JPS59191351A (ja) 1983-04-13 1983-04-13 半導体装置における素子間分離酸化膜の形成方法

Publications (2)

Publication Number Publication Date
JPS59191351A true JPS59191351A (ja) 1984-10-30
JPS6339103B2 JPS6339103B2 (enrdf_load_html_response) 1988-08-03

Family

ID=13318251

Family Applications (1)

Application Number Title Priority Date Filing Date
JP6652183A Granted JPS59191351A (ja) 1983-04-13 1983-04-13 半導体装置における素子間分離酸化膜の形成方法

Country Status (1)

Country Link
JP (1) JPS59191351A (enrdf_load_html_response)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4945069A (en) * 1988-12-16 1990-07-31 Texas Instruments, Incorporated Organic space holder for trench processing
US5387539A (en) * 1992-06-18 1995-02-07 Hyundai Electronics Industries Co., Ltd. Method of manufacturing trench isolation

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4945069A (en) * 1988-12-16 1990-07-31 Texas Instruments, Incorporated Organic space holder for trench processing
US5387539A (en) * 1992-06-18 1995-02-07 Hyundai Electronics Industries Co., Ltd. Method of manufacturing trench isolation

Also Published As

Publication number Publication date
JPS6339103B2 (enrdf_load_html_response) 1988-08-03

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