JPS59186197A - 不揮発性半導体記憶装置 - Google Patents
不揮発性半導体記憶装置Info
- Publication number
- JPS59186197A JPS59186197A JP58061393A JP6139383A JPS59186197A JP S59186197 A JPS59186197 A JP S59186197A JP 58061393 A JP58061393 A JP 58061393A JP 6139383 A JP6139383 A JP 6139383A JP S59186197 A JPS59186197 A JP S59186197A
- Authority
- JP
- Japan
- Prior art keywords
- potential
- circuit
- mos
- point
- power supply
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 239000004065 semiconductor Substances 0.000 title claims abstract description 12
- 238000001514 detection method Methods 0.000 claims description 2
- 230000008878 coupling Effects 0.000 abstract description 2
- 238000010168 coupling process Methods 0.000 abstract description 2
- 238000005859 coupling reaction Methods 0.000 abstract description 2
- 230000009977 dual effect Effects 0.000 abstract 1
- 238000007667 floating Methods 0.000 description 24
- 238000010586 diagram Methods 0.000 description 13
- 230000007935 neutral effect Effects 0.000 description 12
- 238000013459 approach Methods 0.000 description 3
- 230000015556 catabolic process Effects 0.000 description 1
- 239000003795 chemical substances by application Substances 0.000 description 1
- 238000006731 degradation reaction Methods 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 230000006870 function Effects 0.000 description 1
- 239000012535 impurity Substances 0.000 description 1
- 238000005468 ion implantation Methods 0.000 description 1
- 230000007774 longterm Effects 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 230000000717 retained effect Effects 0.000 description 1
- 239000000758 substrate Substances 0.000 description 1
Classifications
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C16/00—Erasable programmable read-only memories
- G11C16/02—Erasable programmable read-only memories electrically programmable
- G11C16/06—Auxiliary circuits, e.g. for writing into memory
- G11C16/26—Sensing or reading circuits; Data output circuits
- G11C16/28—Sensing or reading circuits; Data output circuits using differential sensing or reference cells, e.g. dummy cells
Landscapes
- Read Only Memory (AREA)
- Semiconductor Memories (AREA)
- Non-Volatile Memory (AREA)
Priority Applications (4)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP58061393A JPS59186197A (ja) | 1983-04-07 | 1983-04-07 | 不揮発性半導体記憶装置 |
US06/597,351 US4611301A (en) | 1983-04-07 | 1984-04-06 | Read only memory |
EP84103832A EP0122564B1 (en) | 1983-04-07 | 1984-04-06 | Read only memory |
DE8484103832T DE3482724D1 (de) | 1983-04-07 | 1984-04-06 | Festwertspeicher. |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP58061393A JPS59186197A (ja) | 1983-04-07 | 1983-04-07 | 不揮発性半導体記憶装置 |
Publications (2)
Publication Number | Publication Date |
---|---|
JPS59186197A true JPS59186197A (ja) | 1984-10-22 |
JPH0519240B2 JPH0519240B2 (enrdf_load_stackoverflow) | 1993-03-16 |
Family
ID=13169865
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP58061393A Granted JPS59186197A (ja) | 1983-04-07 | 1983-04-07 | 不揮発性半導体記憶装置 |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPS59186197A (enrdf_load_stackoverflow) |
Cited By (6)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS61131296A (ja) * | 1984-11-29 | 1986-06-18 | Toshiba Corp | 半導体記憶装置 |
JPS61190796A (ja) * | 1985-02-19 | 1986-08-25 | Sharp Corp | 半導体メモリ装置 |
JPS61255597A (ja) * | 1985-05-07 | 1986-11-13 | Toshiba Corp | 不揮発性半導体記憶装置 |
JPS61260491A (ja) * | 1985-05-15 | 1986-11-18 | Seiko Epson Corp | センス増幅回路 |
JPS6276098A (ja) * | 1985-09-30 | 1987-04-08 | Toshiba Corp | センスアンプ回路 |
JPH04362597A (ja) * | 1991-06-10 | 1992-12-15 | Nec Ic Microcomput Syst Ltd | 電流センスアンプ回路 |
Citations (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS5856290A (ja) * | 1981-09-29 | 1983-04-02 | Nec Corp | 記憶装置 |
JPS58208990A (ja) * | 1982-05-28 | 1983-12-05 | Nec Corp | 記憶装置 |
-
1983
- 1983-04-07 JP JP58061393A patent/JPS59186197A/ja active Granted
Patent Citations (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS5856290A (ja) * | 1981-09-29 | 1983-04-02 | Nec Corp | 記憶装置 |
JPS58208990A (ja) * | 1982-05-28 | 1983-12-05 | Nec Corp | 記憶装置 |
Cited By (6)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS61131296A (ja) * | 1984-11-29 | 1986-06-18 | Toshiba Corp | 半導体記憶装置 |
JPS61190796A (ja) * | 1985-02-19 | 1986-08-25 | Sharp Corp | 半導体メモリ装置 |
JPS61255597A (ja) * | 1985-05-07 | 1986-11-13 | Toshiba Corp | 不揮発性半導体記憶装置 |
JPS61260491A (ja) * | 1985-05-15 | 1986-11-18 | Seiko Epson Corp | センス増幅回路 |
JPS6276098A (ja) * | 1985-09-30 | 1987-04-08 | Toshiba Corp | センスアンプ回路 |
JPH04362597A (ja) * | 1991-06-10 | 1992-12-15 | Nec Ic Microcomput Syst Ltd | 電流センスアンプ回路 |
Also Published As
Publication number | Publication date |
---|---|
JPH0519240B2 (enrdf_load_stackoverflow) | 1993-03-16 |
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