JPS59186197A - 不揮発性半導体記憶装置 - Google Patents

不揮発性半導体記憶装置

Info

Publication number
JPS59186197A
JPS59186197A JP58061393A JP6139383A JPS59186197A JP S59186197 A JPS59186197 A JP S59186197A JP 58061393 A JP58061393 A JP 58061393A JP 6139383 A JP6139383 A JP 6139383A JP S59186197 A JPS59186197 A JP S59186197A
Authority
JP
Japan
Prior art keywords
potential
circuit
mos
transistor
point
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP58061393A
Other languages
English (en)
Japanese (ja)
Other versions
JPH0519240B2 (enrdf_load_stackoverflow
Inventor
Hiroshi Iwahashi
岩橋　弘
Masamichi Asano
正通 浅野
Eishin Minagawa
皆川　英信
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Toshiba Corp
Toshiba Electronic Device Solutions Corp
Original Assignee
Toshiba Corp
Toshiba Microelectronics Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Toshiba Corp, Toshiba Microelectronics Corp filed Critical Toshiba Corp
Priority to JP58061393A priority Critical patent/JPS59186197A/ja
Priority to DE8484103832T priority patent/DE3482724D1/de
Priority to EP84103832A priority patent/EP0122564B1/en
Priority to US06/597,351 priority patent/US4611301A/en
Publication of JPS59186197A publication Critical patent/JPS59186197A/ja
Publication of JPH0519240B2 publication Critical patent/JPH0519240B2/ja
Granted legal-status Critical Current

Links

Classifications

    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C16/00—Erasable programmable read-only memories
    • G11C16/02—Erasable programmable read-only memories electrically programmable
    • G11C16/06—Auxiliary circuits, e.g. for writing into memory
    • G11C16/26—Sensing or reading circuits; Data output circuits
    • G11C16/28—Sensing or reading circuits; Data output circuits using differential sensing or reference cells, e.g. dummy cells

Landscapes

  • Read Only Memory (AREA)
  • Semiconductor Memories (AREA)
  • Non-Volatile Memory (AREA)
JP58061393A 1983-04-07 1983-04-07 不揮発性半導体記憶装置 Granted JPS59186197A (ja)

Priority Applications (4)

Application Number Priority Date Filing Date Title
JP58061393A JPS59186197A (ja) 1983-04-07 1983-04-07 不揮発性半導体記憶装置
DE8484103832T DE3482724D1 (de) 1983-04-07 1984-04-06 Festwertspeicher.
EP84103832A EP0122564B1 (en) 1983-04-07 1984-04-06 Read only memory
US06/597,351 US4611301A (en) 1983-04-07 1984-04-06 Read only memory

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP58061393A JPS59186197A (ja) 1983-04-07 1983-04-07 不揮発性半導体記憶装置

Publications (2)

Publication Number Publication Date
JPS59186197A true JPS59186197A (ja) 1984-10-22
JPH0519240B2 JPH0519240B2 (enrdf_load_stackoverflow) 1993-03-16

Family

ID=13169865

Family Applications (1)

Application Number Title Priority Date Filing Date
JP58061393A Granted JPS59186197A (ja) 1983-04-07 1983-04-07 不揮発性半導体記憶装置

Country Status (1)

Country Link
JP (1) JPS59186197A (enrdf_load_stackoverflow)

Cited By (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS61131296A (ja) * 1984-11-29 1986-06-18 Toshiba Corp 半導体記憶装置
JPS61190796A (ja) * 1985-02-19 1986-08-25 Sharp Corp 半導体メモリ装置
JPS61255597A (ja) * 1985-05-07 1986-11-13 Toshiba Corp 不揮発性半導体記憶装置
JPS61260491A (ja) * 1985-05-15 1986-11-18 Seiko Epson Corp センス増幅回路
JPS6276098A (ja) * 1985-09-30 1987-04-08 Toshiba Corp センスアンプ回路
JPH04362597A (ja) * 1991-06-10 1992-12-15 Nec Ic Microcomput Syst Ltd 電流センスアンプ回路

Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5856290A (ja) * 1981-09-29 1983-04-02 Nec Corp 記憶装置
JPS58208990A (ja) * 1982-05-28 1983-12-05 Nec Corp 記憶装置

Patent Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5856290A (ja) * 1981-09-29 1983-04-02 Nec Corp 記憶装置
JPS58208990A (ja) * 1982-05-28 1983-12-05 Nec Corp 記憶装置

Cited By (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS61131296A (ja) * 1984-11-29 1986-06-18 Toshiba Corp 半導体記憶装置
JPS61190796A (ja) * 1985-02-19 1986-08-25 Sharp Corp 半導体メモリ装置
JPS61255597A (ja) * 1985-05-07 1986-11-13 Toshiba Corp 不揮発性半導体記憶装置
JPS61260491A (ja) * 1985-05-15 1986-11-18 Seiko Epson Corp センス増幅回路
JPS6276098A (ja) * 1985-09-30 1987-04-08 Toshiba Corp センスアンプ回路
JPH04362597A (ja) * 1991-06-10 1992-12-15 Nec Ic Microcomput Syst Ltd 電流センスアンプ回路

Also Published As

Publication number Publication date
JPH0519240B2 (enrdf_load_stackoverflow) 1993-03-16

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