JPS59163871A - ダブルゲ−ト型薄膜トランジスタ - Google Patents

ダブルゲ−ト型薄膜トランジスタ

Info

Publication number
JPS59163871A
JPS59163871A JP58038561A JP3856183A JPS59163871A JP S59163871 A JPS59163871 A JP S59163871A JP 58038561 A JP58038561 A JP 58038561A JP 3856183 A JP3856183 A JP 3856183A JP S59163871 A JPS59163871 A JP S59163871A
Authority
JP
Japan
Prior art keywords
thin film
layer
film transistor
semiconductor layer
gate
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP58038561A
Other languages
English (en)
Japanese (ja)
Other versions
JPH0423834B2 (enrdf_load_stackoverflow
Inventor
Yoshiharu Ichikawa
市川　祥治
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
NEC Corp
Original Assignee
NEC Corp
Nippon Electric Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by NEC Corp, Nippon Electric Co Ltd filed Critical NEC Corp
Priority to JP58038561A priority Critical patent/JPS59163871A/ja
Publication of JPS59163871A publication Critical patent/JPS59163871A/ja
Publication of JPH0423834B2 publication Critical patent/JPH0423834B2/ja
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]

Landscapes

  • Thin Film Transistor (AREA)
JP58038561A 1983-03-09 1983-03-09 ダブルゲ−ト型薄膜トランジスタ Granted JPS59163871A (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP58038561A JPS59163871A (ja) 1983-03-09 1983-03-09 ダブルゲ−ト型薄膜トランジスタ

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP58038561A JPS59163871A (ja) 1983-03-09 1983-03-09 ダブルゲ−ト型薄膜トランジスタ

Publications (2)

Publication Number Publication Date
JPS59163871A true JPS59163871A (ja) 1984-09-14
JPH0423834B2 JPH0423834B2 (enrdf_load_stackoverflow) 1992-04-23

Family

ID=12528707

Family Applications (1)

Application Number Title Priority Date Filing Date
JP58038561A Granted JPS59163871A (ja) 1983-03-09 1983-03-09 ダブルゲ−ト型薄膜トランジスタ

Country Status (1)

Country Link
JP (1) JPS59163871A (enrdf_load_stackoverflow)

Cited By (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4984041A (en) * 1989-07-28 1991-01-08 Xerox Corporation High voltage thin film transistor with second control electrode
US5146301A (en) * 1987-10-15 1992-09-08 Sharp Kabushiki Kaisha Terminal electrode structure of a liquid crystal panel display
US5264724A (en) * 1989-02-13 1993-11-23 The University Of Arkansas Silicon nitride for application as the gate dielectric in MOS devices
US5371398A (en) * 1988-10-19 1994-12-06 Fuji Xerox Co., Ltd. Thin film transistor
US5648662A (en) * 1991-06-19 1997-07-15 Semiconductor Energy Laboratory Co., Ltd. Electro-optical device with amorphous and crystalline shift registers
CN106873273A (zh) * 2017-02-23 2017-06-20 京东方科技集团股份有限公司 阵列基板及其分区驱动方法、显示模组和显示装置

Cited By (14)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5146301A (en) * 1987-10-15 1992-09-08 Sharp Kabushiki Kaisha Terminal electrode structure of a liquid crystal panel display
US5371398A (en) * 1988-10-19 1994-12-06 Fuji Xerox Co., Ltd. Thin film transistor
US5264724A (en) * 1989-02-13 1993-11-23 The University Of Arkansas Silicon nitride for application as the gate dielectric in MOS devices
US4984041A (en) * 1989-07-28 1991-01-08 Xerox Corporation High voltage thin film transistor with second control electrode
US6124155A (en) * 1991-06-19 2000-09-26 Semiconductor Energy Laboratory Co., Ltd. Electro-optical device and thin film transistor and method for forming the same
US5811328A (en) * 1991-06-19 1998-09-22 Semiconductor Energy Laboratory Co, Ltd. Electro-optical device and thin film transistor and method forming the same
US5648662A (en) * 1991-06-19 1997-07-15 Semiconductor Energy Laboratory Co., Ltd. Electro-optical device with amorphous and crystalline shift registers
US6166399A (en) * 1991-06-19 2000-12-26 Semiconductor Energy Laboratory Co., Ltd. Active matrix device including thin film transistors
US6335213B1 (en) 1991-06-19 2002-01-01 Semiconductor Energy Laboratory Co., Ltd. Electro-optical device and thin film transistor and method for forming the same
US6756258B2 (en) 1991-06-19 2004-06-29 Semiconductor Energy Laboratory Co., Ltd. Method of manufacturing a semiconductor device
US6797548B2 (en) 1991-06-19 2004-09-28 Semiconductor Energy Laboratory Co., Inc. Electro-optical device and thin film transistor and method for forming the same
US6847064B2 (en) 1991-06-19 2005-01-25 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device having a thin film transistor
CN106873273A (zh) * 2017-02-23 2017-06-20 京东方科技集团股份有限公司 阵列基板及其分区驱动方法、显示模组和显示装置
CN106873273B (zh) * 2017-02-23 2021-01-29 京东方科技集团股份有限公司 阵列基板及其分区驱动方法、显示模组和显示装置

Also Published As

Publication number Publication date
JPH0423834B2 (enrdf_load_stackoverflow) 1992-04-23

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