JPS59155172A - 不揮発性半導体記憶装置 - Google Patents

不揮発性半導体記憶装置

Info

Publication number
JPS59155172A
JPS59155172A JP58028514A JP2851483A JPS59155172A JP S59155172 A JPS59155172 A JP S59155172A JP 58028514 A JP58028514 A JP 58028514A JP 2851483 A JP2851483 A JP 2851483A JP S59155172 A JPS59155172 A JP S59155172A
Authority
JP
Japan
Prior art keywords
silicon substrate
oxide film
floating gate
insulating film
projecting section
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP58028514A
Other languages
English (en)
Japanese (ja)
Other versions
JPH0427714B2 (enrdf_load_stackoverflow
Inventor
Masashi Wada
和田　正志
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Toshiba Corp
Original Assignee
Toshiba Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Toshiba Corp filed Critical Toshiba Corp
Priority to JP58028514A priority Critical patent/JPS59155172A/ja
Publication of JPS59155172A publication Critical patent/JPS59155172A/ja
Publication of JPH0427714B2 publication Critical patent/JPH0427714B2/ja
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/68—Floating-gate IGFETs
    • H10D30/681—Floating-gate IGFETs having only two programming levels

Landscapes

  • Non-Volatile Memory (AREA)
JP58028514A 1983-02-24 1983-02-24 不揮発性半導体記憶装置 Granted JPS59155172A (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP58028514A JPS59155172A (ja) 1983-02-24 1983-02-24 不揮発性半導体記憶装置

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP58028514A JPS59155172A (ja) 1983-02-24 1983-02-24 不揮発性半導体記憶装置

Publications (2)

Publication Number Publication Date
JPS59155172A true JPS59155172A (ja) 1984-09-04
JPH0427714B2 JPH0427714B2 (enrdf_load_stackoverflow) 1992-05-12

Family

ID=12250788

Family Applications (1)

Application Number Title Priority Date Filing Date
JP58028514A Granted JPS59155172A (ja) 1983-02-24 1983-02-24 不揮発性半導体記憶装置

Country Status (1)

Country Link
JP (1) JPS59155172A (enrdf_load_stackoverflow)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5889304A (en) * 1996-06-28 1999-03-30 Kabushiki Kaisha Toshiba Nonvolatile semiconductor memory device

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5889304A (en) * 1996-06-28 1999-03-30 Kabushiki Kaisha Toshiba Nonvolatile semiconductor memory device

Also Published As

Publication number Publication date
JPH0427714B2 (enrdf_load_stackoverflow) 1992-05-12

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