JPS59154688A - 半導体メモリ装置 - Google Patents

半導体メモリ装置

Info

Publication number
JPS59154688A
JPS59154688A JP58027570A JP2757083A JPS59154688A JP S59154688 A JPS59154688 A JP S59154688A JP 58027570 A JP58027570 A JP 58027570A JP 2757083 A JP2757083 A JP 2757083A JP S59154688 A JPS59154688 A JP S59154688A
Authority
JP
Japan
Prior art keywords
data line
signal
timing signal
output
address
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP58027570A
Other languages
English (en)
Japanese (ja)
Other versions
JPH0551992B2 (enrdf_load_stackoverflow
Inventor
Masamichi Ishihara
政道 石原
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Hitachi Ltd
Original Assignee
Hitachi Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Hitachi Ltd filed Critical Hitachi Ltd
Priority to JP58027570A priority Critical patent/JPS59154688A/ja
Publication of JPS59154688A publication Critical patent/JPS59154688A/ja
Publication of JPH0551992B2 publication Critical patent/JPH0551992B2/ja
Granted legal-status Critical Current

Links

Classifications

    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/21—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements
    • G11C11/34—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices

Landscapes

  • Engineering & Computer Science (AREA)
  • Computer Hardware Design (AREA)
  • Static Random-Access Memory (AREA)
JP58027570A 1983-02-23 1983-02-23 半導体メモリ装置 Granted JPS59154688A (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP58027570A JPS59154688A (ja) 1983-02-23 1983-02-23 半導体メモリ装置

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP58027570A JPS59154688A (ja) 1983-02-23 1983-02-23 半導体メモリ装置

Publications (2)

Publication Number Publication Date
JPS59154688A true JPS59154688A (ja) 1984-09-03
JPH0551992B2 JPH0551992B2 (enrdf_load_stackoverflow) 1993-08-04

Family

ID=12224667

Family Applications (1)

Application Number Title Priority Date Filing Date
JP58027570A Granted JPS59154688A (ja) 1983-02-23 1983-02-23 半導体メモリ装置

Country Status (1)

Country Link
JP (1) JPS59154688A (enrdf_load_stackoverflow)

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS61294687A (ja) * 1985-06-21 1986-12-25 Hitachi Ltd 半導体記憶装置
JPS63142589A (ja) * 1986-12-04 1988-06-14 Nec Corp 半導体メモリ
US6073219A (en) * 1996-08-09 2000-06-06 Nec Corporation Semiconductor memory device with high speed read-modify-write function
JP2007026595A (ja) * 2005-07-20 2007-02-01 Renesas Technology Corp 半導体記憶装置

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS61294687A (ja) * 1985-06-21 1986-12-25 Hitachi Ltd 半導体記憶装置
JPS63142589A (ja) * 1986-12-04 1988-06-14 Nec Corp 半導体メモリ
US6073219A (en) * 1996-08-09 2000-06-06 Nec Corporation Semiconductor memory device with high speed read-modify-write function
JP2007026595A (ja) * 2005-07-20 2007-02-01 Renesas Technology Corp 半導体記憶装置

Also Published As

Publication number Publication date
JPH0551992B2 (enrdf_load_stackoverflow) 1993-08-04

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