JPS59152632A - 半導体の表面浄化法 - Google Patents

半導体の表面浄化法

Info

Publication number
JPS59152632A
JPS59152632A JP58028121A JP2812183A JPS59152632A JP S59152632 A JPS59152632 A JP S59152632A JP 58028121 A JP58028121 A JP 58028121A JP 2812183 A JP2812183 A JP 2812183A JP S59152632 A JPS59152632 A JP S59152632A
Authority
JP
Japan
Prior art keywords
layer
oxide film
type
phosphoric acid
semiconductor
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP58028121A
Other languages
English (en)
Japanese (ja)
Other versions
JPH0554259B2 (OSRAM
Inventor
Masaru Wada
優 和田
Kunio Ito
国雄 伊藤
Takeshi Hamada
健 浜田
Yuichi Shimizu
裕一 清水
Fumiko Tajiri
田尻　文子
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Panasonic Holdings Corp
Original Assignee
Matsushita Electric Industrial Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Matsushita Electric Industrial Co Ltd filed Critical Matsushita Electric Industrial Co Ltd
Priority to JP58028121A priority Critical patent/JPS59152632A/ja
Publication of JPS59152632A publication Critical patent/JPS59152632A/ja
Publication of JPH0554259B2 publication Critical patent/JPH0554259B2/ja
Granted legal-status Critical Current

Links

Classifications

    • H10P50/00—

Landscapes

  • Weting (AREA)
  • Cleaning Or Drying Semiconductors (AREA)
JP58028121A 1983-02-21 1983-02-21 半導体の表面浄化法 Granted JPS59152632A (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP58028121A JPS59152632A (ja) 1983-02-21 1983-02-21 半導体の表面浄化法

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP58028121A JPS59152632A (ja) 1983-02-21 1983-02-21 半導体の表面浄化法

Publications (2)

Publication Number Publication Date
JPS59152632A true JPS59152632A (ja) 1984-08-31
JPH0554259B2 JPH0554259B2 (OSRAM) 1993-08-12

Family

ID=12239964

Family Applications (1)

Application Number Title Priority Date Filing Date
JP58028121A Granted JPS59152632A (ja) 1983-02-21 1983-02-21 半導体の表面浄化法

Country Status (1)

Country Link
JP (1) JPS59152632A (OSRAM)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS62252140A (ja) * 1986-04-25 1987-11-02 Nippon Mining Co Ltd ＩｎＰウエ−ハの洗浄方法

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS62252140A (ja) * 1986-04-25 1987-11-02 Nippon Mining Co Ltd ＩｎＰウエ−ハの洗浄方法

Also Published As

Publication number Publication date
JPH0554259B2 (OSRAM) 1993-08-12

Similar Documents

Publication Publication Date Title
JP4015865B2 (ja) 半導体装置の製造方法
JPS59152632A (ja) 半導体の表面浄化法
JPS6381884A (ja) 半導体発光装置
JP2525788B2 (ja) 半導体レ−ザ装置の製造方法
JPS5946113B2 (ja) 半導体レ−ザ素子およびその製造方法
JPH06120163A (ja) 半導体装置の電極形成方法
JPS6223191A (ja) リツジ型半導体レ−ザ装置の製造方法
JPS6242532A (ja) 化合物半導体の表面処理方法
JP3689733B2 (ja) 半導体素子の製造方法
JPS63140591A (ja) 半導体レ−ザ装置の製造方法
JPH0575213A (ja) 半導体レーザ素子の製造方法
JPS62108591A (ja) 半導体レ−ザの製造方法
JP2525776B2 (ja) 半導体装置の製造方法
JP3685838B2 (ja) 化合物半導体装置及びその製造方法
JPS5850789A (ja) 半導体レ−ザ装置及びその製造方法
JP3609840B2 (ja) 半導体発光素子の製造方法
JPS5918200A (ja) ＺｎＳｅの結晶処理法
JPS63146480A (ja) 埋め込み型量子井戸半導体レーザ
JPS5858831B2 (ja) 半導体発光装置の製造方法
JP2007165640A (ja) 半導体光素子を作製する方法
JPS62179790A (ja) 半導体レ−ザ
JPH05283799A (ja) 半導体レーザ装置の製造方法
JPS6319824A (ja) 半導体レーザ素子の製造方法
JPS60239087A (ja) 半導体レーザ装置の製造方法
JPS6372178A (ja) 半導体レ−ザ装置の製造方法