JPS59151464A - Ｍｉｓトランジスタ及びその製造方法 - Google Patents

Ｍｉｓトランジスタ及びその製造方法

Info

Publication number
JPS59151464A
JPS59151464A JP58025054A JP2505483A JPS59151464A JP S59151464 A JPS59151464 A JP S59151464A JP 58025054 A JP58025054 A JP 58025054A JP 2505483 A JP2505483 A JP 2505483A JP S59151464 A JPS59151464 A JP S59151464A
Authority
JP
Japan
Prior art keywords
impurity concentration
gate
layer
transistor
region
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP58025054A
Other languages
English (en)
Japanese (ja)
Other versions
JPH0582067B2 (enExample
Inventor
Yasuo Ono
泰夫 大野
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
NEC Corp
Original Assignee
NEC Corp
Nippon Electric Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by NEC Corp, Nippon Electric Co Ltd filed Critical NEC Corp
Priority to JP58025054A priority Critical patent/JPS59151464A/ja
Publication of JPS59151464A publication Critical patent/JPS59151464A/ja
Publication of JPH0582067B2 publication Critical patent/JPH0582067B2/ja
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
JP58025054A 1983-02-17 1983-02-17 Ｍｉｓトランジスタ及びその製造方法 Granted JPS59151464A (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP58025054A JPS59151464A (ja) 1983-02-17 1983-02-17 Ｍｉｓトランジスタ及びその製造方法

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP58025054A JPS59151464A (ja) 1983-02-17 1983-02-17 Ｍｉｓトランジスタ及びその製造方法

Publications (2)

Publication Number Publication Date
JPS59151464A true JPS59151464A (ja) 1984-08-29
JPH0582067B2 JPH0582067B2 (enExample) 1993-11-17

Family

ID=12155204

Family Applications (1)

Application Number Title Priority Date Filing Date
JP58025054A Granted JPS59151464A (ja) 1983-02-17 1983-02-17 Ｍｉｓトランジスタ及びその製造方法

Country Status (1)

Country Link
JP (1) JPS59151464A (enExample)

Cited By (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS6132462A (ja) * 1984-07-25 1986-02-15 Hitachi Ltd 半導体装置の製造方法
JPS62162360A (ja) * 1986-01-13 1987-07-18 Hitachi Ltd 半導体装置の製造方法
JPS62219966A (ja) * 1986-03-22 1987-09-28 Toshiba Corp 半導体装置
JPS63122177A (ja) * 1986-11-11 1988-05-26 Nippon Telegr & Teleph Corp <Ntt> 半導体装置とその製造方法
JPS63169065A (ja) * 1987-01-05 1988-07-13 Seiko Instr & Electronics Ltd 絶縁ゲ−ト電界効果トランジスタ
JPS63177470A (ja) * 1987-01-16 1988-07-21 Seiko Instr & Electronics Ltd 絶縁ゲ−ト電界効果トランジスタの製造方法
JPS63205964A (ja) * 1987-02-21 1988-08-25 Toshiba Corp 半導体記憶装置およびその製造方法
JPH03209876A (ja) * 1990-01-12 1991-09-12 Mitsubishi Electric Corp 微小なｍｉｓ型ｆｅｔとその製造方法

Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS51114074A (en) * 1975-03-31 1976-10-07 Sony Corp Insulation gate type field effect transistor
JPS5321562A (en) * 1976-08-12 1978-02-28 Nec Corp Signal switch

Patent Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS51114074A (en) * 1975-03-31 1976-10-07 Sony Corp Insulation gate type field effect transistor
JPS5321562A (en) * 1976-08-12 1978-02-28 Nec Corp Signal switch

Cited By (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS6132462A (ja) * 1984-07-25 1986-02-15 Hitachi Ltd 半導体装置の製造方法
JPS62162360A (ja) * 1986-01-13 1987-07-18 Hitachi Ltd 半導体装置の製造方法
JPS62219966A (ja) * 1986-03-22 1987-09-28 Toshiba Corp 半導体装置
JPS63122177A (ja) * 1986-11-11 1988-05-26 Nippon Telegr & Teleph Corp <Ntt> 半導体装置とその製造方法
JPS63169065A (ja) * 1987-01-05 1988-07-13 Seiko Instr & Electronics Ltd 絶縁ゲ−ト電界効果トランジスタ
JPS63177470A (ja) * 1987-01-16 1988-07-21 Seiko Instr & Electronics Ltd 絶縁ゲ−ト電界効果トランジスタの製造方法
JPS63205964A (ja) * 1987-02-21 1988-08-25 Toshiba Corp 半導体記憶装置およびその製造方法
JPH03209876A (ja) * 1990-01-12 1991-09-12 Mitsubishi Electric Corp 微小なｍｉｓ型ｆｅｔとその製造方法

Also Published As

Publication number Publication date
JPH0582067B2 (enExample) 1993-11-17

Similar Documents

Publication Publication Date Title
Choi et al. FinFET process refinements for improved mobility and gate work function engineering
US6927414B2 (en) High speed lateral heterojunction MISFETs realized by 2-dimensional bandgap engineering and methods thereof
US7205604B2 (en) Ultra scalable high speed heterojunction vertical n-channel MISFETs and methods thereof
US7312485B2 (en) CMOS fabrication process utilizing special transistor orientation
US7091522B2 (en) Strained silicon carbon alloy MOSFET structure and fabrication method thereof
KR20070038128A (ko) Ｃｍｏｓｆｅｔ 구조
JPH0536917A (ja) 相補型半導体装置の製造方法
US5557129A (en) Semiconductor MOSFET device having a shallow nitrogen implanted channel region
US20130334608A1 (en) Semiconductor device
JPS59151464A (ja) Ｍｉｓトランジスタ及びその製造方法
JPH06268215A (ja) Ｍｉｓ型半導体装置
US6153910A (en) Semiconductor device with nitrogen implanted channel region
JPH0571190B2 (enExample)
JPH0346238A (ja) 半導体装置の製造方法
JPH0350771A (ja) 半導体装置
JPH04346272A (ja) 半導体装置及びその製造方法
JPH0521800A (ja) Ｓｏｉｍｏｓｆｅｔ
JPH0612826B2 (ja) 薄膜トランジスタの製造方法
JP2005101278A (ja) 半導体装置およびその製造方法
JPS6017946A (ja) 半導体装置
JP2020035789A (ja) 半導体装置
JPS6049667A (ja) 半導体装置
KR970010684B1 (ko) 기판이 높은 불순물 농도를 가지는 soi 소자 구조
JPS63179573A (ja) 絶縁ゲート電界効果トランジスタおよび絶縁ゲート電界効果トランジスタの製造方法
JPS6223168A (ja) 半導体装置