JPH0582067B2 - - Google Patents

Info

Publication number
JPH0582067B2
JPH0582067B2 JP58025054A JP2505483A JPH0582067B2 JP H0582067 B2 JPH0582067 B2 JP H0582067B2 JP 58025054 A JP58025054 A JP 58025054A JP 2505483 A JP2505483 A JP 2505483A JP H0582067 B2 JPH0582067 B2 JP H0582067B2
Authority
JP
Japan
Prior art keywords
impurity concentration
gate
layer
region
transistor
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
JP58025054A
Other languages
English (en)
Japanese (ja)
Other versions
JPS59151464A (ja
Inventor
Yasuo Oono
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
NEC Corp
Original Assignee
Nippon Electric Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Nippon Electric Co Ltd filed Critical Nippon Electric Co Ltd
Priority to JP58025054A priority Critical patent/JPS59151464A/ja
Publication of JPS59151464A publication Critical patent/JPS59151464A/ja
Publication of JPH0582067B2 publication Critical patent/JPH0582067B2/ja
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
JP58025054A 1983-02-17 1983-02-17 Ｍｉｓトランジスタ及びその製造方法 Granted JPS59151464A (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP58025054A JPS59151464A (ja) 1983-02-17 1983-02-17 Ｍｉｓトランジスタ及びその製造方法

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP58025054A JPS59151464A (ja) 1983-02-17 1983-02-17 Ｍｉｓトランジスタ及びその製造方法

Publications (2)

Publication Number Publication Date
JPS59151464A JPS59151464A (ja) 1984-08-29
JPH0582067B2 true JPH0582067B2 (enExample) 1993-11-17

Family

ID=12155204

Family Applications (1)

Application Number Title Priority Date Filing Date
JP58025054A Granted JPS59151464A (ja) 1983-02-17 1983-02-17 Ｍｉｓトランジスタ及びその製造方法

Country Status (1)

Country Link
JP (1) JPS59151464A (enExample)

Families Citing this family (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH0691248B2 (ja) * 1984-07-25 1994-11-14 株式会社日立製作所 半導体装置の製造方法
JPH0638497B2 (ja) * 1986-01-13 1994-05-18 株式会社日立製作所 半導体装置の製造方法
JPS62219966A (ja) * 1986-03-22 1987-09-28 Toshiba Corp 半導体装置
JPS63122177A (ja) * 1986-11-11 1988-05-26 Nippon Telegr & Teleph Corp <Ntt> 半導体装置とその製造方法
JPS63169065A (ja) * 1987-01-05 1988-07-13 Seiko Instr & Electronics Ltd 絶縁ゲ−ト電界効果トランジスタ
JPS63177470A (ja) * 1987-01-16 1988-07-21 Seiko Instr & Electronics Ltd 絶縁ゲ−ト電界効果トランジスタの製造方法
JP2633547B2 (ja) * 1987-02-21 1997-07-23 株式会社東芝 半導体記憶装置およびその製造方法
JP2660446B2 (ja) * 1990-01-12 1997-10-08 三菱電機株式会社 微小なｍｉｓ型ｆｅｔとその製造方法

Family Cites Families (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS51114074A (en) * 1975-03-31 1976-10-07 Sony Corp Insulation gate type field effect transistor
JPS5321562A (en) * 1976-08-12 1978-02-28 Nec Corp Signal switch

Also Published As

Publication number Publication date
JPS59151464A (ja) 1984-08-29

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