JPS59149061A - 半導体装置の製造方法 - Google Patents

半導体装置の製造方法

Info

Publication number
JPS59149061A
JPS59149061A JP58025025A JP2502583A JPS59149061A JP S59149061 A JPS59149061 A JP S59149061A JP 58025025 A JP58025025 A JP 58025025A JP 2502583 A JP2502583 A JP 2502583A JP S59149061 A JPS59149061 A JP S59149061A
Authority
JP
Japan
Prior art keywords
layer
polycrystalline silicon
electrode
silicon layer
doped polycrystalline
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP58025025A
Other languages
English (en)
Japanese (ja)
Other versions
JPH0430176B2 (enExample
Inventor
Hiroshige Takahashi
高橋　広成
Hirokazu Miyoshi
三好　寛和
Akira Nishimoto
西本　章
Akira Ando
安東　亮
Moriyoshi Nakajima
盛義 中島
Yoko Matsuno
松野　葉子
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Mitsubishi Electric Corp
Original Assignee
Mitsubishi Electric Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Mitsubishi Electric Corp filed Critical Mitsubishi Electric Corp
Priority to JP58025025A priority Critical patent/JPS59149061A/ja
Publication of JPS59149061A publication Critical patent/JPS59149061A/ja
Publication of JPH0430176B2 publication Critical patent/JPH0430176B2/ja
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]

Landscapes

  • Electrodes Of Semiconductors (AREA)
  • Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
  • Non-Volatile Memory (AREA)
JP58025025A 1983-02-15 1983-02-15 半導体装置の製造方法 Granted JPS59149061A (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP58025025A JPS59149061A (ja) 1983-02-15 1983-02-15 半導体装置の製造方法

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP58025025A JPS59149061A (ja) 1983-02-15 1983-02-15 半導体装置の製造方法

Publications (2)

Publication Number Publication Date
JPS59149061A true JPS59149061A (ja) 1984-08-25
JPH0430176B2 JPH0430176B2 (enExample) 1992-05-21

Family

ID=12154366

Family Applications (1)

Application Number Title Priority Date Filing Date
JP58025025A Granted JPS59149061A (ja) 1983-02-15 1983-02-15 半導体装置の製造方法

Country Status (1)

Country Link
JP (1) JPS59149061A (enExample)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS624375A (ja) * 1985-06-29 1987-01-10 Sony Corp 半導体装置

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS624375A (ja) * 1985-06-29 1987-01-10 Sony Corp 半導体装置

Also Published As

Publication number Publication date
JPH0430176B2 (enExample) 1992-05-21

Similar Documents

Publication Publication Date Title
US5237196A (en) Semiconductor device and method for manufacturing the same
JP3290776B2 (ja) 絶縁ゲート型電界効果トランジスタ
KR910006592B1 (ko) 반도체장치 및 그 제조방법
JPS59149061A (ja) 半導体装置の製造方法
JPS6286838A (ja) 集積回路の製造方法
JP3332825B2 (ja) 半導体装置の製造方法
JPS6315749B2 (enExample)
JPS61295644A (ja) 半導体装置の製造方法
JP2603088B2 (ja) 半導体装置
JPS59161861A (ja) 半導体装置
JPH0376033B2 (enExample)
JPS63155755A (ja) 半導体装置の製造方法
JPS59198765A (ja) 絶縁ゲ−ト型電界効果トランジスタ
JP2656159B2 (ja) 薄膜トランジスタ及びその製造方法
JPS6018935A (ja) 半導体装置の製造方法
JPS6124827B2 (enExample)
JPS5895868A (ja) 半導体装置の製造方法
JPH03126263A (ja) 半導体装置及びその製造方法
JPS61129860A (ja) 半導体装置及びその製造方法
JPS61174742A (ja) 半導体装置の製造方法
JPS6237964A (ja) シヨツトキバリヤ形半導体装置およびその製造方法
JPS5826177B2 (ja) 半導体装置の製造方法
JPS627708B2 (enExample)
JPS61148865A (ja) 半導体装置の製造方法
JPS62111444A (ja) 半導体装置の製造方法