JPS59143362A - パツシベ−シヨン膜 - Google Patents

パツシベ−シヨン膜

Info

Publication number
JPS59143362A
JPS59143362A JP58016740A JP1674083A JPS59143362A JP S59143362 A JPS59143362 A JP S59143362A JP 58016740 A JP58016740 A JP 58016740A JP 1674083 A JP1674083 A JP 1674083A JP S59143362 A JPS59143362 A JP S59143362A
Authority
JP
Japan
Prior art keywords
film
electrode
photoconductor
contact type
passivation film
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP58016740A
Other languages
English (en)
Japanese (ja)
Other versions
JPH0582065B2 (cg-RX-API-DMAC10.html
Inventor
Toshihisa Hamano
浜野　利久
Takeshi Nakamura
毅 中村
Mario Fuse
マリオ 布施
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Fujifilm Business Innovation Corp
Original Assignee
Fuji Xerox Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Fuji Xerox Co Ltd filed Critical Fuji Xerox Co Ltd
Priority to JP58016740A priority Critical patent/JPS59143362A/ja
Priority to DE8383113268T priority patent/DE3381336D1/de
Priority to EP19830113268 priority patent/EP0115645B1/en
Publication of JPS59143362A publication Critical patent/JPS59143362A/ja
Priority to US06/726,295 priority patent/US4587171A/en
Publication of JPH0582065B2 publication Critical patent/JPH0582065B2/ja
Granted legal-status Critical Current

Links

Classifications

    • H10P14/6328—
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F30/00—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors
    • H10F30/10—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors the devices being sensitive to infrared radiation, visible or ultraviolet radiation, and having no potential barriers, e.g. photoresistors
    • H10F30/15—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors the devices being sensitive to infrared radiation, visible or ultraviolet radiation, and having no potential barriers, e.g. photoresistors comprising amorphous semiconductors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F71/00—Manufacture or treatment of devices covered by this subclass
    • H10F71/129—Passivating
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F77/00—Constructional details of devices covered by this subclass
    • H10F77/30—Coatings
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E10/00—Energy generation through renewable energy sources
    • Y02E10/50—Photovoltaic [PV] energy
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
    • Y10T428/00—Stock material or miscellaneous articles
    • Y10T428/31504—Composite [nonstructural laminate]
    • Y10T428/31678—Of metal

Landscapes

  • Solid State Image Pick-Up Elements (AREA)
  • Light Receiving Elements (AREA)
  • Formation Of Insulating Films (AREA)
JP58016740A 1983-02-03 1983-02-03 パツシベ−シヨン膜 Granted JPS59143362A (ja)

Priority Applications (4)

Application Number Priority Date Filing Date Title
JP58016740A JPS59143362A (ja) 1983-02-03 1983-02-03 パツシベ−シヨン膜
DE8383113268T DE3381336D1 (de) 1983-02-03 1983-12-31 Verfahren zur herstellung einer passivierungsschicht auf einer photoelektrischen umwandlungsanordnung.
EP19830113268 EP0115645B1 (en) 1983-02-03 1983-12-31 Process for forming passivation film on photoelectric conversion device and the device produced thereby
US06/726,295 US4587171A (en) 1983-02-03 1985-04-24 Process for forming passivation film on photoelectric conversion device and the device produced thereby

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP58016740A JPS59143362A (ja) 1983-02-03 1983-02-03 パツシベ−シヨン膜

Publications (2)

Publication Number Publication Date
JPS59143362A true JPS59143362A (ja) 1984-08-16
JPH0582065B2 JPH0582065B2 (cg-RX-API-DMAC10.html) 1993-11-17

Family

ID=11924660

Family Applications (1)

Application Number Title Priority Date Filing Date
JP58016740A Granted JPS59143362A (ja) 1983-02-03 1983-02-03 パツシベ−シヨン膜

Country Status (4)

Country Link
US (1) US4587171A (cg-RX-API-DMAC10.html)
EP (1) EP0115645B1 (cg-RX-API-DMAC10.html)
JP (1) JPS59143362A (cg-RX-API-DMAC10.html)
DE (1) DE3381336D1 (cg-RX-API-DMAC10.html)

Cited By (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS61171161A (ja) * 1985-01-25 1986-08-01 Hitachi Ltd 一次元イメ−ジセンサ
JPS6269552A (ja) * 1985-09-24 1987-03-30 Hitachi Ltd 受光素子
JPS6295866A (ja) * 1985-10-23 1987-05-02 Hitachi Ltd 受光素子の製造方法
JPH01186627A (ja) * 1988-01-14 1989-07-26 Rohm Co Ltd 半導体素子のパシベーション膜作成方法
CN117248198A (zh) * 2023-05-11 2023-12-19 云南昆物新跃光电科技有限公司 一种红外探测器钝化膜的应力调节方法

Families Citing this family (17)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH0752718B2 (ja) * 1984-11-26 1995-06-05 株式会社半導体エネルギー研究所 薄膜形成方法
US6786997B1 (en) 1984-11-26 2004-09-07 Semiconductor Energy Laboratory Co., Ltd. Plasma processing apparatus
US4721631A (en) * 1985-02-14 1988-01-26 Sharp Kabushiki Kaisha Method of manufacturing thin-film electroluminescent display panel
US4659585A (en) * 1985-06-24 1987-04-21 International Business Machines Corporation Planarized ceramic substrates
US5318857A (en) * 1989-11-06 1994-06-07 Dow Corning Corporation Low temperature ozonolysis of silicon and ceramic oxide precursor polymers to ceramic coatings
US5215928A (en) * 1990-09-07 1993-06-01 Sony Corporation Method of manufacturing a semiconductor device for optical pick-up
JP2861340B2 (ja) * 1990-09-07 1999-02-24 ソニー株式会社 半導体装置
JP3154772B2 (ja) * 1991-06-20 2001-04-09 株式会社東芝 シリコン薄膜
US5286518A (en) * 1992-04-30 1994-02-15 Vlsi Technology, Inc. Integrated-circuit processing with progressive intermetal-dielectric deposition
US5508091A (en) * 1992-12-04 1996-04-16 Photran Corporation Transparent electrodes for liquid cells and liquid crystal displays
US6652922B1 (en) * 1995-06-15 2003-11-25 Alliedsignal Inc. Electron-beam processed films for microelectronics structures
US6315188B1 (en) * 2000-06-28 2001-11-13 Sandia Corporation Surface preparation for high purity alumina ceramics enabling direct brazing in hydrogen atmospheres
US6587097B1 (en) 2000-11-28 2003-07-01 3M Innovative Properties Co. Display system
US7597964B2 (en) * 2005-08-02 2009-10-06 Guardian Industries Corp. Thermally tempered coated article with transparent conductive oxide (TCO) coating
US20070193624A1 (en) * 2006-02-23 2007-08-23 Guardian Industries Corp. Indium zinc oxide based front contact for photovoltaic device and method of making same
KR20110062598A (ko) * 2009-12-03 2011-06-10 삼성전자주식회사 적층막 제조방법, 이를 이용한 태양전지의 제조방법
US20150097268A1 (en) * 2013-10-07 2015-04-09 Xintec Inc. Inductor structure and manufacturing method thereof

Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS52104062A (en) * 1976-02-27 1977-09-01 Hitachi Ltd Production of surface protection film of electronic parts
JPS5587443A (en) * 1978-12-26 1980-07-02 Fujitsu Ltd Semiconductor device
JPS55132077A (en) * 1979-03-31 1980-10-14 Dainippon Printing Co Ltd Manufacture of color solid image pickup element plate
JPS5753373A (en) * 1980-09-16 1982-03-30 Ricoh Co Ltd Input/output device

Family Cites Families (11)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US413488A (en) * 1889-10-22 Frederick w
US3573096A (en) * 1965-06-23 1971-03-30 Sperry Rand Corp Silane method for making silicon nitride
JPS5824951B2 (ja) * 1974-10-09 1983-05-24 ソニー株式会社 コウガクソウチ
DE2557079C2 (de) * 1975-12-18 1984-05-24 Ibm Deutschland Gmbh, 7000 Stuttgart Verfahren zum Herstellen einer Maskierungsschicht
US4253881A (en) * 1978-10-23 1981-03-03 Rudolf Hezel Solar cells composed of semiconductive materials
US4268711A (en) * 1979-04-26 1981-05-19 Optical Coating Laboratory, Inc. Method and apparatus for forming films from vapors using a contained plasma source
JPS5643776A (en) * 1979-09-18 1981-04-22 Seiko Epson Corp Production of solar battery
JPS56157075A (en) * 1980-05-09 1981-12-04 Hitachi Ltd Photoelectric transducing device
US4410558A (en) * 1980-05-19 1983-10-18 Energy Conversion Devices, Inc. Continuous amorphous solar cell production system
US4344985A (en) * 1981-03-27 1982-08-17 Rca Corporation Method of passivating a semiconductor device with a multi-layer passivant system by thermally growing a layer of oxide on an oxygen doped polycrystalline silicon layer
US4379943A (en) * 1981-12-14 1983-04-12 Energy Conversion Devices, Inc. Current enhanced photovoltaic device

Patent Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS52104062A (en) * 1976-02-27 1977-09-01 Hitachi Ltd Production of surface protection film of electronic parts
JPS5587443A (en) * 1978-12-26 1980-07-02 Fujitsu Ltd Semiconductor device
JPS55132077A (en) * 1979-03-31 1980-10-14 Dainippon Printing Co Ltd Manufacture of color solid image pickup element plate
JPS5753373A (en) * 1980-09-16 1982-03-30 Ricoh Co Ltd Input/output device

Cited By (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS61171161A (ja) * 1985-01-25 1986-08-01 Hitachi Ltd 一次元イメ−ジセンサ
JPS6269552A (ja) * 1985-09-24 1987-03-30 Hitachi Ltd 受光素子
JPS6295866A (ja) * 1985-10-23 1987-05-02 Hitachi Ltd 受光素子の製造方法
JPH01186627A (ja) * 1988-01-14 1989-07-26 Rohm Co Ltd 半導体素子のパシベーション膜作成方法
CN117248198A (zh) * 2023-05-11 2023-12-19 云南昆物新跃光电科技有限公司 一种红外探测器钝化膜的应力调节方法

Also Published As

Publication number Publication date
US4587171A (en) 1986-05-06
JPH0582065B2 (cg-RX-API-DMAC10.html) 1993-11-17
EP0115645B1 (en) 1990-03-14
EP0115645A2 (en) 1984-08-15
EP0115645A3 (en) 1986-10-15
DE3381336D1 (de) 1990-04-19

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