JPS59139641A - 静電吸着装置の製造方法 - Google Patents

静電吸着装置の製造方法

Info

Publication number
JPS59139641A
JPS59139641A JP1405283A JP1405283A JPS59139641A JP S59139641 A JPS59139641 A JP S59139641A JP 1405283 A JP1405283 A JP 1405283A JP 1405283 A JP1405283 A JP 1405283A JP S59139641 A JPS59139641 A JP S59139641A
Authority
JP
Japan
Prior art keywords
insulating layer
plasma
gas
sample
frequency power
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP1405283A
Other languages
English (en)
Japanese (ja)
Other versions
JPS6245697B2 (enrdf_load_stackoverflow
Inventor
Moritaka Nakamura
守孝 中村
Naomichi Abe
阿部　直道
Toshimasa Kisa
木佐　俊正
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Fujitsu Ltd
Original Assignee
Fujitsu Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Fujitsu Ltd filed Critical Fujitsu Ltd
Priority to JP1405283A priority Critical patent/JPS59139641A/ja
Publication of JPS59139641A publication Critical patent/JPS59139641A/ja
Publication of JPS6245697B2 publication Critical patent/JPS6245697B2/ja
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
    • H01L21/6831—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using electrostatic chucks
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/68—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for positioning, orientation or alignment

Landscapes

  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Jigs For Machine Tools (AREA)
JP1405283A 1983-01-31 1983-01-31 静電吸着装置の製造方法 Granted JPS59139641A (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP1405283A JPS59139641A (ja) 1983-01-31 1983-01-31 静電吸着装置の製造方法

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP1405283A JPS59139641A (ja) 1983-01-31 1983-01-31 静電吸着装置の製造方法

Publications (2)

Publication Number Publication Date
JPS59139641A true JPS59139641A (ja) 1984-08-10
JPS6245697B2 JPS6245697B2 (enrdf_load_stackoverflow) 1987-09-28

Family

ID=11850315

Family Applications (1)

Application Number Title Priority Date Filing Date
JP1405283A Granted JPS59139641A (ja) 1983-01-31 1983-01-31 静電吸着装置の製造方法

Country Status (1)

Country Link
JP (1) JPS59139641A (enrdf_load_stackoverflow)

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS61257733A (ja) * 1986-05-21 1986-11-15 Tokuda Seisakusho Ltd 静電チヤツク
JPH01240243A (ja) * 1988-03-18 1989-09-25 Tokuda Seisakusho Ltd 電極およびその製造方法
US5539179A (en) * 1990-11-17 1996-07-23 Tokyo Electron Limited Electrostatic chuck having a multilayer structure for attracting an object
JPH08274150A (ja) * 1995-03-31 1996-10-18 Nec Corp 静電吸着ステージ

Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5267353A (en) * 1975-12-01 1977-06-03 Hitachi Ltd Electrostatic chuck

Patent Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5267353A (en) * 1975-12-01 1977-06-03 Hitachi Ltd Electrostatic chuck

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS61257733A (ja) * 1986-05-21 1986-11-15 Tokuda Seisakusho Ltd 静電チヤツク
JPH01240243A (ja) * 1988-03-18 1989-09-25 Tokuda Seisakusho Ltd 電極およびその製造方法
US5539179A (en) * 1990-11-17 1996-07-23 Tokyo Electron Limited Electrostatic chuck having a multilayer structure for attracting an object
JPH08274150A (ja) * 1995-03-31 1996-10-18 Nec Corp 静電吸着ステージ

Also Published As

Publication number Publication date
JPS6245697B2 (enrdf_load_stackoverflow) 1987-09-28

Similar Documents

Publication Publication Date Title
JPH0779122B2 (ja) ダイヤモンド・コーティングを施した静電チャック
JPS62125642A (ja) ウエハサセプタ装置
JP2694668B2 (ja) 基板保持装置
JPH02239623A (ja) 安定化層及びその製法
JPH0746437Y2 (ja) 静電チャック
JPS62103372A (ja) プラズマを使用した化学蒸気堆積による薄膜形成方法および装置
JPH0652758B2 (ja) 静電チヤツク
JPH0434953A (ja) 静電チャック板
JPS59139641A (ja) 静電吸着装置の製造方法
JP3509856B2 (ja) 安定化層のための保護層及びその製法
JP2880920B2 (ja) エッチング装置
JP2006066857A (ja) 双極型静電チャック
JP5278737B2 (ja) 放熱材料の製造方法
JPH02268430A (ja) プラズマ処理装置
CN1021100C (zh) 等离子体处理方法和装置
JPS622632A (ja) 静電吸着装置
JP3254701B2 (ja) 静電チャック及びその製造方法
JPS63156321A (ja) プラズマ処理装置
JPS62290133A (ja) ドライエツチング方法
JPH0845911A (ja) プラズマ処理装置用電極
CN109346518B (zh) 一种微腔等离子体晶体管及其制备方法
KR20040063194A (ko) 수명을 연장시키는 절연막을 갖는 반도체 장비용 정전척
JP3115767B2 (ja) プラズマエッチング方法および装置
JPH03232226A (ja) エッチング装置
JPH01238120A (ja) エッチング装置