JPS59132687A - 半導体光検出素子 - Google Patents

半導体光検出素子

Info

Publication number
JPS59132687A
JPS59132687A JP58007876A JP787683A JPS59132687A JP S59132687 A JPS59132687 A JP S59132687A JP 58007876 A JP58007876 A JP 58007876A JP 787683 A JP787683 A JP 787683A JP S59132687 A JPS59132687 A JP S59132687A
Authority
JP
Japan
Prior art keywords
layer
semiconductor
thickness
band
ionization rate
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP58007876A
Other languages
English (en)
Japanese (ja)
Other versions
JPH0437594B2 (enrdf_load_stackoverflow
Inventor
Toshitaka Torikai
俊敬 鳥飼
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
NEC Corp
Original Assignee
NEC Corp
Nippon Electric Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by NEC Corp, Nippon Electric Co Ltd filed Critical NEC Corp
Priority to JP58007876A priority Critical patent/JPS59132687A/ja
Publication of JPS59132687A publication Critical patent/JPS59132687A/ja
Publication of JPH0437594B2 publication Critical patent/JPH0437594B2/ja
Granted legal-status Critical Current

Links

Classifications

    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B82—NANOTECHNOLOGY
    • B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
    • B82Y20/00—Nanooptics, e.g. quantum optics or photonic crystals
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F30/00—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors
    • H10F30/20—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors the devices having potential barriers, e.g. phototransistors
    • H10F30/21—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors the devices having potential barriers, e.g. phototransistors the devices being sensitive to infrared, visible or ultraviolet radiation
    • H10F30/22—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors the devices having potential barriers, e.g. phototransistors the devices being sensitive to infrared, visible or ultraviolet radiation the devices having only one potential barrier, e.g. photodiodes
    • H10F30/225—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors the devices having potential barriers, e.g. phototransistors the devices being sensitive to infrared, visible or ultraviolet radiation the devices having only one potential barrier, e.g. photodiodes the potential barrier working in avalanche mode, e.g. avalanche photodiodes
    • H10F30/2255—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors the devices having potential barriers, e.g. phototransistors the devices being sensitive to infrared, visible or ultraviolet radiation the devices having only one potential barrier, e.g. photodiodes the potential barrier working in avalanche mode, e.g. avalanche photodiodes in which the active layers form heterostructures, e.g. SAM structures
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F77/00—Constructional details of devices covered by this subclass
    • H10F77/10—Semiconductor bodies
    • H10F77/14—Shape of semiconductor bodies; Shapes, relative sizes or dispositions of semiconductor regions within semiconductor bodies
    • H10F77/146—Superlattices; Multiple quantum well structures

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Nanotechnology (AREA)
  • Physics & Mathematics (AREA)
  • Life Sciences & Earth Sciences (AREA)
  • Biophysics (AREA)
  • Optics & Photonics (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Light Receiving Elements (AREA)
JP58007876A 1983-01-20 1983-01-20 半導体光検出素子 Granted JPS59132687A (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP58007876A JPS59132687A (ja) 1983-01-20 1983-01-20 半導体光検出素子

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP58007876A JPS59132687A (ja) 1983-01-20 1983-01-20 半導体光検出素子

Publications (2)

Publication Number Publication Date
JPS59132687A true JPS59132687A (ja) 1984-07-30
JPH0437594B2 JPH0437594B2 (enrdf_load_stackoverflow) 1992-06-19

Family

ID=11677812

Family Applications (1)

Application Number Title Priority Date Filing Date
JP58007876A Granted JPS59132687A (ja) 1983-01-20 1983-01-20 半導体光検出素子

Country Status (1)

Country Link
JP (1) JPS59132687A (enrdf_load_stackoverflow)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH01140780A (ja) * 1987-11-27 1989-06-01 Hikari Gijutsu Kenkyu Kaihatsu Kk 半導体受光装置
RU2558264C1 (ru) * 2014-03-26 2015-07-27 Общество с ограниченной ответственностью "Солар Дотс" Полупроводниковая структура для фотопреобразующего и светоизлучающего устройств

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH01140780A (ja) * 1987-11-27 1989-06-01 Hikari Gijutsu Kenkyu Kaihatsu Kk 半導体受光装置
RU2558264C1 (ru) * 2014-03-26 2015-07-27 Общество с ограниченной ответственностью "Солар Дотс" Полупроводниковая структура для фотопреобразующего и светоизлучающего устройств

Also Published As

Publication number Publication date
JPH0437594B2 (enrdf_load_stackoverflow) 1992-06-19

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