JPS59128292A - 薄膜の結晶化方法 - Google Patents

薄膜の結晶化方法

Info

Publication number
JPS59128292A
JPS59128292A JP33783A JP33783A JPS59128292A JP S59128292 A JPS59128292 A JP S59128292A JP 33783 A JP33783 A JP 33783A JP 33783 A JP33783 A JP 33783A JP S59128292 A JPS59128292 A JP S59128292A
Authority
JP
Japan
Prior art keywords
thin film
substrate
film
crystallizing
semiconductor
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP33783A
Other languages
English (en)
Japanese (ja)
Other versions
JPH0442358B2 (enrdf_load_stackoverflow
Inventor
Masafumi Shinpo
新保　雅文
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Seiko Instruments Inc
Original Assignee
Seiko Instruments Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Seiko Instruments Inc filed Critical Seiko Instruments Inc
Priority to JP33783A priority Critical patent/JPS59128292A/ja
Publication of JPS59128292A publication Critical patent/JPS59128292A/ja
Publication of JPH0442358B2 publication Critical patent/JPH0442358B2/ja
Granted legal-status Critical Current

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B1/00—Single-crystal growth directly from the solid state
    • C30B1/02—Single-crystal growth directly from the solid state by thermal treatment, e.g. strain annealing
    • C30B1/023—Single-crystal growth directly from the solid state by thermal treatment, e.g. strain annealing from solids with amorphous structure

Landscapes

  • Chemical & Material Sciences (AREA)
  • Physics & Mathematics (AREA)
  • Thermal Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Materials Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)
JP33783A 1983-01-05 1983-01-05 薄膜の結晶化方法 Granted JPS59128292A (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP33783A JPS59128292A (ja) 1983-01-05 1983-01-05 薄膜の結晶化方法

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP33783A JPS59128292A (ja) 1983-01-05 1983-01-05 薄膜の結晶化方法

Publications (2)

Publication Number Publication Date
JPS59128292A true JPS59128292A (ja) 1984-07-24
JPH0442358B2 JPH0442358B2 (enrdf_load_stackoverflow) 1992-07-13

Family

ID=11471067

Family Applications (1)

Application Number Title Priority Date Filing Date
JP33783A Granted JPS59128292A (ja) 1983-01-05 1983-01-05 薄膜の結晶化方法

Country Status (1)

Country Link
JP (1) JPS59128292A (enrdf_load_stackoverflow)

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS60260492A (ja) * 1984-06-05 1985-12-23 Sony Corp 半導体薄膜の結晶化方法
US4667391A (en) * 1984-06-29 1987-05-26 Commissariat A L'energie Atomique Process for the production of thin film hall effect transducers
US5893948A (en) * 1996-04-05 1999-04-13 Xerox Corporation Method for forming single silicon crystals using nucleation sites
KR100397762B1 (ko) * 2000-10-09 2003-09-13 (주)쎄미시스코 비정질 실리콘 박막의 결정화 방법

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS60260492A (ja) * 1984-06-05 1985-12-23 Sony Corp 半導体薄膜の結晶化方法
US4667391A (en) * 1984-06-29 1987-05-26 Commissariat A L'energie Atomique Process for the production of thin film hall effect transducers
US5893948A (en) * 1996-04-05 1999-04-13 Xerox Corporation Method for forming single silicon crystals using nucleation sites
KR100397762B1 (ko) * 2000-10-09 2003-09-13 (주)쎄미시스코 비정질 실리콘 박막의 결정화 방법

Also Published As

Publication number Publication date
JPH0442358B2 (enrdf_load_stackoverflow) 1992-07-13

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