JPS59117166A - Ｍｏｓ集積回路 - Google Patents

Ｍｏｓ集積回路

Info

Publication number
JPS59117166A
JPS59117166A JP57232402A JP23240282A JPS59117166A JP S59117166 A JPS59117166 A JP S59117166A JP 57232402 A JP57232402 A JP 57232402A JP 23240282 A JP23240282 A JP 23240282A JP S59117166 A JPS59117166 A JP S59117166A
Authority
JP
Japan
Prior art keywords
drain
region
window
contact
contact window
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP57232402A
Other languages
English (en)
Japanese (ja)
Other versions
JPH0566030B2 (enrdf_load_stackoverflow
Inventor
Takeshi Ando
毅 安東
Yasunobu Okano
岡野　安伸
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
NEC Corp
Original Assignee
NEC Corp
Nippon Electric Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by NEC Corp, Nippon Electric Co Ltd filed Critical NEC Corp
Priority to JP57232402A priority Critical patent/JPS59117166A/ja
Publication of JPS59117166A publication Critical patent/JPS59117166A/ja
Publication of JPH0566030B2 publication Critical patent/JPH0566030B2/ja
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]

Landscapes

  • Semiconductor Integrated Circuits (AREA)
JP57232402A 1982-12-23 1982-12-23 Ｍｏｓ集積回路 Granted JPS59117166A (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP57232402A JPS59117166A (ja) 1982-12-23 1982-12-23 Ｍｏｓ集積回路

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP57232402A JPS59117166A (ja) 1982-12-23 1982-12-23 Ｍｏｓ集積回路

Publications (2)

Publication Number Publication Date
JPS59117166A true JPS59117166A (ja) 1984-07-06
JPH0566030B2 JPH0566030B2 (enrdf_load_stackoverflow) 1993-09-20

Family

ID=16938674

Family Applications (1)

Application Number Title Priority Date Filing Date
JP57232402A Granted JPS59117166A (ja) 1982-12-23 1982-12-23 Ｍｏｓ集積回路

Country Status (1)

Country Link
JP (1) JPS59117166A (enrdf_load_stackoverflow)

Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5629370A (en) * 1979-08-18 1981-03-24 Mitsubishi Electric Corp Mos transistor

Patent Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5629370A (en) * 1979-08-18 1981-03-24 Mitsubishi Electric Corp Mos transistor

Also Published As

Publication number Publication date
JPH0566030B2 (enrdf_load_stackoverflow) 1993-09-20

Similar Documents

Publication Publication Date Title
JPS6237819B2 (enrdf_load_stackoverflow)
US5089871A (en) Increased voltage mos semiconductor device
JPS59117166A (ja) Ｍｏｓ集積回路
JPH0349266A (ja) Ｍｏｓ型半導体装置
JPH0191470A (ja) 入力保護回路
JPS58162065A (ja) ゲ−ト保護回路
JPS604263A (ja) Ｍｏｓ電界効果半導体装置
JPS6081867A (ja) Ｍｏｓ型電界効果トランジスタ
JPS622705B2 (enrdf_load_stackoverflow)
JP3360192B2 (ja) 半導体装置
JPS6329975A (ja) 電界効果型半導体装置
JPS6020559A (ja) 複合半導体装置
JPS59231869A (ja) Ｍｏｓ型電界効果半導体装置
JPH0456469B2 (enrdf_load_stackoverflow)
JPS59224163A (ja) 半導体装置
JP2973450B2 (ja) 半導体装置
JPS6338262A (ja) 電力用ｍｏｓ型電界効果トランジスタ
JPS622706B2 (enrdf_load_stackoverflow)
JPH02312281A (ja) 伝導度変調型ｍｏｓｆｅｔ
JPS6350872B2 (enrdf_load_stackoverflow)
JPH01114079A (ja) 半導体装置
JPS5887874A (ja) 絶縁ゲ−ト形半導体装置
JPS5858747A (ja) Ｍｏｓ型半導体集積回路
JPH01185974A (ja) Ｍｉｓ−ｆｅｔ
JPH0482065B2 (enrdf_load_stackoverflow)