JPS59115564A - 薄膜トランジスタの製造方法 - Google Patents

薄膜トランジスタの製造方法

Info

Publication number
JPS59115564A
JPS59115564A JP57228188A JP22818882A JPS59115564A JP S59115564 A JPS59115564 A JP S59115564A JP 57228188 A JP57228188 A JP 57228188A JP 22818882 A JP22818882 A JP 22818882A JP S59115564 A JPS59115564 A JP S59115564A
Authority
JP
Japan
Prior art keywords
film
plasma cvd
gate
temperature
thin film
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP57228188A
Other languages
English (en)
Japanese (ja)
Other versions
JPH0546105B2 (https=
Inventor
Teruya Suzuki
鈴木　光弥
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Seiko Instruments Inc
Original Assignee
Seiko Instruments Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Seiko Instruments Inc filed Critical Seiko Instruments Inc
Priority to JP57228188A priority Critical patent/JPS59115564A/ja
Publication of JPS59115564A publication Critical patent/JPS59115564A/ja
Publication of JPH0546105B2 publication Critical patent/JPH0546105B2/ja
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]

Landscapes

  • Electrodes Of Semiconductors (AREA)
  • Formation Of Insulating Films (AREA)
JP57228188A 1982-12-23 1982-12-23 薄膜トランジスタの製造方法 Granted JPS59115564A (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP57228188A JPS59115564A (ja) 1982-12-23 1982-12-23 薄膜トランジスタの製造方法

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP57228188A JPS59115564A (ja) 1982-12-23 1982-12-23 薄膜トランジスタの製造方法

Publications (2)

Publication Number Publication Date
JPS59115564A true JPS59115564A (ja) 1984-07-04
JPH0546105B2 JPH0546105B2 (https=) 1993-07-13

Family

ID=16872582

Family Applications (1)

Application Number Title Priority Date Filing Date
JP57228188A Granted JPS59115564A (ja) 1982-12-23 1982-12-23 薄膜トランジスタの製造方法

Country Status (1)

Country Link
JP (1) JPS59115564A (https=)

Cited By (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5146301A (en) * 1987-10-15 1992-09-08 Sharp Kabushiki Kaisha Terminal electrode structure of a liquid crystal panel display
JPH0574763A (ja) * 1991-07-19 1993-03-26 G T C:Kk ゲート絶縁膜の形成方法
US5821565A (en) * 1988-06-29 1998-10-13 Hitachi, Ltd. Thin film transistor structure having increased on-current
US6716752B2 (en) * 1998-10-29 2004-04-06 Lg.Philips Lcd Co., Ltd. Method of forming silicon oxide layer and method of manufacturing thin film transistor thereby
US7465679B1 (en) 1993-02-19 2008-12-16 Semiconductor Energy Laboratory Co., Ltd. Insulating film and method of producing semiconductor device

Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS58115862A (ja) * 1981-12-28 1983-07-09 Seiko Epson Corp 薄膜トランジスタの製造方法

Patent Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS58115862A (ja) * 1981-12-28 1983-07-09 Seiko Epson Corp 薄膜トランジスタの製造方法

Cited By (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5146301A (en) * 1987-10-15 1992-09-08 Sharp Kabushiki Kaisha Terminal electrode structure of a liquid crystal panel display
US5821565A (en) * 1988-06-29 1998-10-13 Hitachi, Ltd. Thin film transistor structure having increased on-current
US5981973A (en) * 1988-06-29 1999-11-09 Hitachi, Ltd. Thin film transistor structure having increased on-current
JPH0574763A (ja) * 1991-07-19 1993-03-26 G T C:Kk ゲート絶縁膜の形成方法
US7465679B1 (en) 1993-02-19 2008-12-16 Semiconductor Energy Laboratory Co., Ltd. Insulating film and method of producing semiconductor device
US6716752B2 (en) * 1998-10-29 2004-04-06 Lg.Philips Lcd Co., Ltd. Method of forming silicon oxide layer and method of manufacturing thin film transistor thereby

Also Published As

Publication number Publication date
JPH0546105B2 (https=) 1993-07-13

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