JPH0546105B2 - - Google Patents

Info

Publication number
JPH0546105B2
JPH0546105B2 JP57228188A JP22818882A JPH0546105B2 JP H0546105 B2 JPH0546105 B2 JP H0546105B2 JP 57228188 A JP57228188 A JP 57228188A JP 22818882 A JP22818882 A JP 22818882A JP H0546105 B2 JPH0546105 B2 JP H0546105B2
Authority
JP
Japan
Prior art keywords
film
gate insulating
forming
insulating film
gate
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
JP57228188A
Other languages
English (en)
Japanese (ja)
Other versions
JPS59115564A (ja
Inventor
Teruya Suzuki
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Seiko Instruments Inc
Original Assignee
Seiko Instruments Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Seiko Instruments Inc filed Critical Seiko Instruments Inc
Priority to JP57228188A priority Critical patent/JPS59115564A/ja
Publication of JPS59115564A publication Critical patent/JPS59115564A/ja
Publication of JPH0546105B2 publication Critical patent/JPH0546105B2/ja
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]

Landscapes

  • Electrodes Of Semiconductors (AREA)
  • Formation Of Insulating Films (AREA)
JP57228188A 1982-12-23 1982-12-23 薄膜トランジスタの製造方法 Granted JPS59115564A (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP57228188A JPS59115564A (ja) 1982-12-23 1982-12-23 薄膜トランジスタの製造方法

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP57228188A JPS59115564A (ja) 1982-12-23 1982-12-23 薄膜トランジスタの製造方法

Publications (2)

Publication Number Publication Date
JPS59115564A JPS59115564A (ja) 1984-07-04
JPH0546105B2 true JPH0546105B2 (https=) 1993-07-13

Family

ID=16872582

Family Applications (1)

Application Number Title Priority Date Filing Date
JP57228188A Granted JPS59115564A (ja) 1982-12-23 1982-12-23 薄膜トランジスタの製造方法

Country Status (1)

Country Link
JP (1) JPS59115564A (https=)

Families Citing this family (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2786628B2 (ja) * 1987-10-15 1998-08-13 シャープ株式会社 液晶パネルの電極構造
US5493129A (en) * 1988-06-29 1996-02-20 Hitachi, Ltd. Thin film transistor structure having increased on-current
JPH0574763A (ja) * 1991-07-19 1993-03-26 G T C:Kk ゲート絶縁膜の形成方法
US7465679B1 (en) 1993-02-19 2008-12-16 Semiconductor Energy Laboratory Co., Ltd. Insulating film and method of producing semiconductor device
JP3818561B2 (ja) * 1998-10-29 2006-09-06 エルジー フィリップス エルシーディー カンパニー リミテッド シリコン酸化膜の成膜方法および薄膜トランジスタの製造方法

Family Cites Families (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS58115862A (ja) * 1981-12-28 1983-07-09 Seiko Epson Corp 薄膜トランジスタの製造方法

Also Published As

Publication number Publication date
JPS59115564A (ja) 1984-07-04

Similar Documents

Publication Publication Date Title
CN100390945C (zh) 基底绝缘膜的形成方法
KR20020068252A (ko) 박막 트랜지스터 및 그 제조 방법
JPH05167008A (ja) 半導体素子の製造方法
JPH0546105B2 (https=)
JPS63304670A (ja) 薄膜半導体装置の製造方法
JP3443909B2 (ja) 半導体膜形成方法、半導体装置の製造方法及び半導体装置
JP2508601B2 (ja) 電界効果型薄膜トランジスタ
KR20010088207A (ko) 탄탈륨산화막-티타늄산화막 복합유전막 형성방법
JP2740275B2 (ja) 薄膜トランジスタ
JPS6387772A (ja) Ｍｉｓ形容量
JPH07161996A (ja) 絶縁ゲート型電界効果半導体装置及びその製造方法
US6709927B1 (en) Process for treating ONO dielectric film of a floating gate memory cell
JPS6146069A (ja) 半導体装置の製造方法
KR100326237B1 (ko) 오존가스를이용한탄탈륨산화막형성방법및그를이용한반도체소자의캐패시터형성방법
JPH113887A (ja) 薄膜トランジスタの製造方法
JPH0661489A (ja) 薄膜トランジスタの製造方法
JPH05315566A (ja) 半導体素子におけるキャパシタ電極の製造方法
JPH0281421A (ja) 多結晶シリコン膜の形成方法
KR100451507B1 (ko) 반도체 소자의 제조방법
JP2001176867A (ja) シリコン酸化膜の形成方法
JP2003178990A (ja) 基板熱処理方法、半導体装置の製造方法、化学気相堆積方法及ディスプレイ
JPH04282860A (ja) 半導体装置の製造方法
JPH0677433A (ja) 半導体装置の製造方法
JPS62160742A (ja) シリサイド膜の熱処理方法
JP2000150803A (ja) 半導体装置の製造方法