JPS59114841A - 半導体装置の製造方法 - Google Patents

半導体装置の製造方法

Info

Publication number
JPS59114841A
JPS59114841A JP57224168A JP22416882A JPS59114841A JP S59114841 A JPS59114841 A JP S59114841A JP 57224168 A JP57224168 A JP 57224168A JP 22416882 A JP22416882 A JP 22416882A JP S59114841 A JPS59114841 A JP S59114841A
Authority
JP
Japan
Prior art keywords
wiring pattern
film
wiring
semiconductor substrate
semiconductor device
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP57224168A
Other languages
English (en)
Japanese (ja)
Other versions
JPS6339105B2 (enrdf_load_stackoverflow
Inventor
Jiro Oshima
次郎 大島
Masayasu Abe
正泰 安部
Yutaka Etsuno
越野　裕
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Toshiba Corp
Original Assignee
Toshiba Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Toshiba Corp filed Critical Toshiba Corp
Priority to JP57224168A priority Critical patent/JPS59114841A/ja
Priority to US06/562,212 priority patent/US4502207A/en
Priority to DE19833346239 priority patent/DE3346239A1/de
Publication of JPS59114841A publication Critical patent/JPS59114841A/ja
Publication of JPS6339105B2 publication Critical patent/JPS6339105B2/ja
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/0001—Technical content checked by a classifier
    • H01L2924/0002—Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00

Landscapes

  • Electrodes Of Semiconductors (AREA)
  • Local Oxidation Of Silicon (AREA)
  • Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
JP57224168A 1982-12-21 1982-12-21 半導体装置の製造方法 Granted JPS59114841A (ja)

Priority Applications (3)

Application Number Priority Date Filing Date Title
JP57224168A JPS59114841A (ja) 1982-12-21 1982-12-21 半導体装置の製造方法
US06/562,212 US4502207A (en) 1982-12-21 1983-12-16 Wiring material for semiconductor device and method for forming wiring pattern therewith
DE19833346239 DE3346239A1 (de) 1982-12-21 1983-12-21 Beschaltungsmaterial fuer eine halbleitervorrichtung und verfahren zur bildung eines beschaltungsmusters

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP57224168A JPS59114841A (ja) 1982-12-21 1982-12-21 半導体装置の製造方法

Publications (2)

Publication Number Publication Date
JPS59114841A true JPS59114841A (ja) 1984-07-03
JPS6339105B2 JPS6339105B2 (enrdf_load_stackoverflow) 1988-08-03

Family

ID=16809592

Family Applications (1)

Application Number Title Priority Date Filing Date
JP57224168A Granted JPS59114841A (ja) 1982-12-21 1982-12-21 半導体装置の製造方法

Country Status (1)

Country Link
JP (1) JPS59114841A (enrdf_load_stackoverflow)

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS61287151A (ja) * 1985-06-14 1986-12-17 Matsushita Electronics Corp 半導体装置
JPS61289649A (ja) * 1985-06-17 1986-12-19 Matsushita Electronics Corp 半導体装置の製造方法
JPS63228627A (ja) * 1987-03-04 1988-09-22 アドバンスト・マイクロ・ディバイシズ・インコーポレーテッド 集積回路構造を製造するための方法

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR102657635B1 (ko) * 2021-08-12 2024-04-16 재단법인 포항산업과학연구원 침상 코크스 전구체 조성물

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS61287151A (ja) * 1985-06-14 1986-12-17 Matsushita Electronics Corp 半導体装置
JPS61289649A (ja) * 1985-06-17 1986-12-19 Matsushita Electronics Corp 半導体装置の製造方法
JPS63228627A (ja) * 1987-03-04 1988-09-22 アドバンスト・マイクロ・ディバイシズ・インコーポレーテッド 集積回路構造を製造するための方法

Also Published As

Publication number Publication date
JPS6339105B2 (enrdf_load_stackoverflow) 1988-08-03

Similar Documents

Publication Publication Date Title
US3585461A (en) High reliability semiconductive devices and integrated circuits
US4575923A (en) Method of manufacturing a high resistance layer having a low temperature coefficient of resistance and semiconductor device having such high resistance layer
JPS6025894B2 (ja) イオン打込みを用いた半導体装置の製造方法
JPS6057952A (ja) 半導体装置の製造方法
JPS63244776A (ja) 絶縁ゲ−ト型電界効果トランジスタの製造方法
JPS59114841A (ja) 半導体装置の製造方法
CA1238429A (en) Low resistivity hillock free conductors in vlsi devices
JPH0226055A (ja) 半導体装置の製造方法
JPS58182873A (ja) 半導体装置の製造方法
JP3453764B2 (ja) 半導体装置の製造方法
JPH0412629B2 (enrdf_load_stackoverflow)
JPS5916361A (ja) 半導体装置の製造方法
JPS63260052A (ja) 半導体装置及びその製造方法
JPS61156837A (ja) 半導体装置の製造方法
JPS6074675A (ja) 半導体装置
JPS5886779A (ja) 半導体装置の製造方法
JP2576175B2 (ja) ポリサイド配線層の形成方法
JPS60109286A (ja) Ｍｉｓ型半導体装置の製法
TW368690B (en) Manufacturing method for preventing void defect on polycide component
JPH1012626A (ja) 半導体装置の製造方法
JPH0314225A (ja) 配線コンタクトの形成方法
JPS5833855A (ja) 半導体装置の製造方法
JPS63229736A (ja) 半導体装置の製造方法
JPH02105520A (ja) 半導体装置の製造方法
JPS616823A (ja) 半導体装置の製造方法