JPS59114841A - 半導体装置の製造方法 - Google Patents
半導体装置の製造方法Info
- Publication number
- JPS59114841A JPS59114841A JP22416882A JP22416882A JPS59114841A JP S59114841 A JPS59114841 A JP S59114841A JP 22416882 A JP22416882 A JP 22416882A JP 22416882 A JP22416882 A JP 22416882A JP S59114841 A JPS59114841 A JP S59114841A
- Authority
- JP
- Japan
- Prior art keywords
- wiring pattern
- film
- wiring
- semiconductor substrate
- semiconductor device
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 239000004065 semiconductor Substances 0.000 title claims abstract description 34
- 238000004519 manufacturing process Methods 0.000 title claims description 9
- 239000000758 substrate Substances 0.000 claims abstract description 15
- 238000000034 method Methods 0.000 claims abstract description 5
- 150000002500 ions Chemical class 0.000 claims description 3
- 229910052751 metal Inorganic materials 0.000 claims description 3
- 239000002184 metal Substances 0.000 claims description 3
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 abstract description 10
- 229910052782 aluminium Inorganic materials 0.000 abstract description 9
- 230000007547 defect Effects 0.000 abstract description 6
- 239000002344 surface layer Substances 0.000 abstract description 6
- 238000005468 ion implantation Methods 0.000 abstract description 5
- 238000009413 insulation Methods 0.000 abstract 3
- 230000006835 compression Effects 0.000 abstract 1
- 238000007906 compression Methods 0.000 abstract 1
- 230000001681 protective effect Effects 0.000 description 8
- 229910052581 Si3N4 Inorganic materials 0.000 description 7
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 7
- 230000002950 deficient Effects 0.000 description 6
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 5
- 238000010438 heat treatment Methods 0.000 description 5
- 238000002161 passivation Methods 0.000 description 5
- 229910052710 silicon Inorganic materials 0.000 description 4
- 239000010703 silicon Substances 0.000 description 4
- 238000010586 diagram Methods 0.000 description 3
- 230000010354 integration Effects 0.000 description 3
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 2
- AZDRQVAHHNSJOQ-UHFFFAOYSA-N alumane Chemical group [AlH3] AZDRQVAHHNSJOQ-UHFFFAOYSA-N 0.000 description 2
- 239000010410 layer Substances 0.000 description 2
- 229910052814 silicon oxide Inorganic materials 0.000 description 2
- ZOXJGFHDIHLPTG-UHFFFAOYSA-N Boron Chemical compound [B] ZOXJGFHDIHLPTG-UHFFFAOYSA-N 0.000 description 1
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 description 1
- 229910007258 Si2H4 Inorganic materials 0.000 description 1
- 230000001133 acceleration Effects 0.000 description 1
- 229910052785 arsenic Inorganic materials 0.000 description 1
- RQNWIZPPADIBDY-UHFFFAOYSA-N arsenic atom Chemical compound [As] RQNWIZPPADIBDY-UHFFFAOYSA-N 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- 229910052796 boron Inorganic materials 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 238000005530 etching Methods 0.000 description 1
- 239000000463 material Substances 0.000 description 1
- 150000002739 metals Chemical class 0.000 description 1
- 150000004767 nitrides Chemical class 0.000 description 1
- 229910052698 phosphorus Inorganic materials 0.000 description 1
- 239000011574 phosphorus Substances 0.000 description 1
- 238000005245 sintering Methods 0.000 description 1
- 239000000126 substance Substances 0.000 description 1
- 238000007740 vapor deposition Methods 0.000 description 1
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/0001—Technical content checked by a classifier
- H01L2924/0002—Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00
Landscapes
- Electrodes Of Semiconductors (AREA)
- Local Oxidation Of Silicon (AREA)
- Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
Priority Applications (3)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP22416882A JPS59114841A (ja) | 1982-12-21 | 1982-12-21 | 半導体装置の製造方法 |
| US06/562,212 US4502207A (en) | 1982-12-21 | 1983-12-16 | Wiring material for semiconductor device and method for forming wiring pattern therewith |
| DE19833346239 DE3346239A1 (de) | 1982-12-21 | 1983-12-21 | Beschaltungsmaterial fuer eine halbleitervorrichtung und verfahren zur bildung eines beschaltungsmusters |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP22416882A JPS59114841A (ja) | 1982-12-21 | 1982-12-21 | 半導体装置の製造方法 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS59114841A true JPS59114841A (ja) | 1984-07-03 |
| JPS6339105B2 JPS6339105B2 (enrdf_load_stackoverflow) | 1988-08-03 |
Family
ID=16809592
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP22416882A Granted JPS59114841A (ja) | 1982-12-21 | 1982-12-21 | 半導体装置の製造方法 |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS59114841A (enrdf_load_stackoverflow) |
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS61287151A (ja) * | 1985-06-14 | 1986-12-17 | Matsushita Electronics Corp | 半導体装置 |
| JPS61289649A (ja) * | 1985-06-17 | 1986-12-19 | Matsushita Electronics Corp | 半導体装置の製造方法 |
| JPS63228627A (ja) * | 1987-03-04 | 1988-09-22 | アドバンスト・マイクロ・ディバイシズ・インコーポレーテッド | 集積回路構造を製造するための方法 |
Families Citing this family (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| KR102657635B1 (ko) * | 2021-08-12 | 2024-04-16 | 재단법인 포항산업과학연구원 | 침상 코크스 전구체 조성물 |
-
1982
- 1982-12-21 JP JP22416882A patent/JPS59114841A/ja active Granted
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS61287151A (ja) * | 1985-06-14 | 1986-12-17 | Matsushita Electronics Corp | 半導体装置 |
| JPS61289649A (ja) * | 1985-06-17 | 1986-12-19 | Matsushita Electronics Corp | 半導体装置の製造方法 |
| JPS63228627A (ja) * | 1987-03-04 | 1988-09-22 | アドバンスト・マイクロ・ディバイシズ・インコーポレーテッド | 集積回路構造を製造するための方法 |
Also Published As
| Publication number | Publication date |
|---|---|
| JPS6339105B2 (enrdf_load_stackoverflow) | 1988-08-03 |
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