JPS59108471A - 固体撮像装置 - Google Patents

固体撮像装置

Info

Publication number
JPS59108471A
JPS59108471A JP57218925A JP21892582A JPS59108471A JP S59108471 A JPS59108471 A JP S59108471A JP 57218925 A JP57218925 A JP 57218925A JP 21892582 A JP21892582 A JP 21892582A JP S59108471 A JPS59108471 A JP S59108471A
Authority
JP
Japan
Prior art keywords
region
layer
gate
channel region
cell
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP57218925A
Other languages
English (en)
Japanese (ja)
Other versions
JPH0414831B2 (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html
Inventor
Junichi Nishizawa
潤一 西澤
Naoshige Tamamushi
玉蟲　尚茂
Tetsuo Sen
哲夫 笘
Akio Azuma
昭男 東
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Fujifilm Holdings Corp
Original Assignee
Fuji Photo Film Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Fuji Photo Film Co Ltd filed Critical Fuji Photo Film Co Ltd
Priority to JP57218925A priority Critical patent/JPS59108471A/ja
Publication of JPS59108471A publication Critical patent/JPS59108471A/ja
Publication of JPH0414831B2 publication Critical patent/JPH0414831B2/ja
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/10—Integrated devices
    • H10F39/12—Image sensors
    • H10F39/196—Junction field effect transistor [JFET] image sensors; Static induction transistor [SIT] image sensors

Landscapes

  • Solid State Image Pick-Up Elements (AREA)
  • Transforming Light Signals Into Electric Signals (AREA)
JP57218925A 1982-12-14 1982-12-14 固体撮像装置 Granted JPS59108471A (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP57218925A JPS59108471A (ja) 1982-12-14 1982-12-14 固体撮像装置

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP57218925A JPS59108471A (ja) 1982-12-14 1982-12-14 固体撮像装置

Publications (2)

Publication Number Publication Date
JPS59108471A true JPS59108471A (ja) 1984-06-22
JPH0414831B2 JPH0414831B2 (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html) 1992-03-16

Family

ID=16727467

Family Applications (1)

Application Number Title Priority Date Filing Date
JP57218925A Granted JPS59108471A (ja) 1982-12-14 1982-12-14 固体撮像装置

Country Status (1)

Country Link
JP (1) JPS59108471A (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html)

Also Published As

Publication number Publication date
JPH0414831B2 (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html) 1992-03-16

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