JPS59108470A - 固体撮像装置 - Google Patents

固体撮像装置

Info

Publication number
JPS59108470A
JPS59108470A JP57218924A JP21892482A JPS59108470A JP S59108470 A JPS59108470 A JP S59108470A JP 57218924 A JP57218924 A JP 57218924A JP 21892482 A JP21892482 A JP 21892482A JP S59108470 A JPS59108470 A JP S59108470A
Authority
JP
Japan
Prior art keywords
region
layer
source
cells
cell
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP57218924A
Other languages
English (en)
Japanese (ja)
Other versions
JPH0414548B2 (enExample
Inventor
Junichi Nishizawa
潤一 西澤
Naoshige Tamamushi
玉蟲　尚茂
Soubee Suzuki
鈴木　壮兵衛
Tetsuo Sen
哲夫 笘
Akio Azuma
昭男 東
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Fujifilm Holdings Corp
Original Assignee
Fuji Photo Film Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Fuji Photo Film Co Ltd filed Critical Fuji Photo Film Co Ltd
Priority to JP57218924A priority Critical patent/JPS59108470A/ja
Publication of JPS59108470A publication Critical patent/JPS59108470A/ja
Publication of JPH0414548B2 publication Critical patent/JPH0414548B2/ja
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/10—Integrated devices
    • H10F39/12—Image sensors
    • H10F39/196—Junction field effect transistor [JFET] image sensors; Static induction transistor [SIT] image sensors

Landscapes

  • Solid State Image Pick-Up Elements (AREA)
  • Transforming Light Signals Into Electric Signals (AREA)
JP57218924A 1982-12-14 1982-12-14 固体撮像装置 Granted JPS59108470A (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP57218924A JPS59108470A (ja) 1982-12-14 1982-12-14 固体撮像装置

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP57218924A JPS59108470A (ja) 1982-12-14 1982-12-14 固体撮像装置

Publications (2)

Publication Number Publication Date
JPS59108470A true JPS59108470A (ja) 1984-06-22
JPH0414548B2 JPH0414548B2 (enExample) 1992-03-13

Family

ID=16727450

Family Applications (1)

Application Number Title Priority Date Filing Date
JP57218924A Granted JPS59108470A (ja) 1982-12-14 1982-12-14 固体撮像装置

Country Status (1)

Country Link
JP (1) JPS59108470A (enExample)

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS61156982A (ja) * 1984-12-28 1986-07-16 Canon Inc 光電変換装置
JPH04102374U (ja) * 1991-02-07 1992-09-03 日本ビクター株式会社 クランプ回路
EP1310999A3 (en) * 2001-11-13 2006-03-01 Kabushiki Kaisha Toshiba Solid image sensor using junction gate type field-effect transistor as pixel

Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5038531A (enExample) * 1973-08-07 1975-04-10
JPS5630371A (en) * 1979-08-18 1981-03-26 Semiconductor Res Found Semiconductor image pickup unit
JPS5795769A (en) * 1980-12-05 1982-06-14 Fuji Photo Film Co Ltd Semiconductor image pickup device

Patent Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5038531A (enExample) * 1973-08-07 1975-04-10
JPS5630371A (en) * 1979-08-18 1981-03-26 Semiconductor Res Found Semiconductor image pickup unit
JPS5795769A (en) * 1980-12-05 1982-06-14 Fuji Photo Film Co Ltd Semiconductor image pickup device

Cited By (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS61156982A (ja) * 1984-12-28 1986-07-16 Canon Inc 光電変換装置
JPH04102374U (ja) * 1991-02-07 1992-09-03 日本ビクター株式会社 クランプ回路
EP1310999A3 (en) * 2001-11-13 2006-03-01 Kabushiki Kaisha Toshiba Solid image sensor using junction gate type field-effect transistor as pixel
US7236197B2 (en) 2001-11-13 2007-06-26 Kabushiki Kaisha Toshiba Solid-state image sensor using junction gate type field-effect transistor as pixel
US7508017B2 (en) 2001-11-13 2009-03-24 Kabushiki Kaisha Toshiba Solid-state image sensor using junction gate type field-effect transistor as pixel
US7679667B2 (en) 2001-11-13 2010-03-16 Kabushiki Kaisha Toshiba Solid-state image sensor using junction gate type field-effect transistor as pixel

Also Published As

Publication number Publication date
JPH0414548B2 (enExample) 1992-03-13

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