JPS59107560A - 半導体集積回路装置 - Google Patents

半導体集積回路装置

Info

Publication number
JPS59107560A
JPS59107560A JP57216821A JP21682182A JPS59107560A JP S59107560 A JPS59107560 A JP S59107560A JP 57216821 A JP57216821 A JP 57216821A JP 21682182 A JP21682182 A JP 21682182A JP S59107560 A JPS59107560 A JP S59107560A
Authority
JP
Japan
Prior art keywords
power supply
circuit
voltage
channel
integrated circuit
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP57216821A
Other languages
English (en)
Japanese (ja)
Other versions
JPH058584B2 (enrdf_load_stackoverflow
Inventor
Osamu Minato
湊　修
Toshiaki Masuhara
増原　利明
Toshio Sasaki
敏夫 佐々木
Akira Yamamoto
昌 山本
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Hitachi Ltd
Original Assignee
Hitachi Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Hitachi Ltd filed Critical Hitachi Ltd
Priority to JP57216821A priority Critical patent/JPS59107560A/ja
Publication of JPS59107560A publication Critical patent/JPS59107560A/ja
Publication of JPH058584B2 publication Critical patent/JPH058584B2/ja
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
    • H10D84/80—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of at least one component covered by groups H10D12/00 or H10D30/00, e.g. integration of IGFETs
    • H10D84/82—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of at least one component covered by groups H10D12/00 or H10D30/00, e.g. integration of IGFETs of only field-effect components
    • H10D84/83—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of at least one component covered by groups H10D12/00 or H10D30/00, e.g. integration of IGFETs of only field-effect components of only insulated-gate FETs [IGFET]
    • H10D84/85—Complementary IGFETs, e.g. CMOS
    • H10D84/858—Complementary IGFETs, e.g. CMOS comprising a P-type well but not an N-type well

Landscapes

  • Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)
JP57216821A 1982-12-13 1982-12-13 半導体集積回路装置 Granted JPS59107560A (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP57216821A JPS59107560A (ja) 1982-12-13 1982-12-13 半導体集積回路装置

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP57216821A JPS59107560A (ja) 1982-12-13 1982-12-13 半導体集積回路装置

Publications (2)

Publication Number Publication Date
JPS59107560A true JPS59107560A (ja) 1984-06-21
JPH058584B2 JPH058584B2 (enrdf_load_stackoverflow) 1993-02-02

Family

ID=16694414

Family Applications (1)

Application Number Title Priority Date Filing Date
JP57216821A Granted JPS59107560A (ja) 1982-12-13 1982-12-13 半導体集積回路装置

Country Status (1)

Country Link
JP (1) JPS59107560A (enrdf_load_stackoverflow)

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH02196469A (ja) * 1989-01-25 1990-08-03 Fujitsu Ltd 半導体装置
US5153452A (en) * 1988-08-31 1992-10-06 Hitachi Ltd. Bipolar-MOS IC with internal voltage generator and LSI device with internal voltage generator
EP0715226A2 (en) 1994-11-30 1996-06-05 Sharp Kabushiki Kaisha Developing device
EP0889527A3 (en) * 1997-07-04 1999-08-25 Nec Corporation Semiconductor device with reduced number of trough holes and method of manufacturing the same

Citations (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5423340A (en) * 1977-07-22 1979-02-21 Hitachi Ltd Mis semiconductor integrated circuit
JPS5539412A (en) * 1978-09-13 1980-03-19 Hitachi Ltd Insulating gate field effect transistor integrated circuit and its manufacture
JPS5673468A (en) * 1979-11-21 1981-06-18 Toshiba Corp Mos type semiconductor device
JPS5693360A (en) * 1979-12-26 1981-07-28 Mitsubishi Electric Corp Semiconductor device
JPS56115570A (en) * 1980-02-18 1981-09-10 Matsushita Electric Ind Co Ltd Manufacture of semiconductor device
JPS56146276A (en) * 1980-02-29 1981-11-13 Chiyou Lsi Gijutsu Kenkyu Kumiai Insulating gate type field-effect transistor
JPS56146275A (en) * 1980-02-29 1981-11-13 Chiyou Lsi Gijutsu Kenkyu Kumiai Insulating gate type field-effect transistor
JPS5710822A (en) * 1980-06-23 1982-01-20 Toshiba Corp Integrated circuit device
JPS5741721A (en) * 1980-08-26 1982-03-09 Seiko Instr & Electronics Ltd Constant voltage power circuit
JPS57126161A (en) * 1981-01-28 1982-08-05 Nec Corp Integrated circuit device

Patent Citations (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5423340A (en) * 1977-07-22 1979-02-21 Hitachi Ltd Mis semiconductor integrated circuit
JPS5539412A (en) * 1978-09-13 1980-03-19 Hitachi Ltd Insulating gate field effect transistor integrated circuit and its manufacture
JPS5673468A (en) * 1979-11-21 1981-06-18 Toshiba Corp Mos type semiconductor device
JPS5693360A (en) * 1979-12-26 1981-07-28 Mitsubishi Electric Corp Semiconductor device
JPS56115570A (en) * 1980-02-18 1981-09-10 Matsushita Electric Ind Co Ltd Manufacture of semiconductor device
JPS56146276A (en) * 1980-02-29 1981-11-13 Chiyou Lsi Gijutsu Kenkyu Kumiai Insulating gate type field-effect transistor
JPS56146275A (en) * 1980-02-29 1981-11-13 Chiyou Lsi Gijutsu Kenkyu Kumiai Insulating gate type field-effect transistor
JPS5710822A (en) * 1980-06-23 1982-01-20 Toshiba Corp Integrated circuit device
JPS5741721A (en) * 1980-08-26 1982-03-09 Seiko Instr & Electronics Ltd Constant voltage power circuit
JPS57126161A (en) * 1981-01-28 1982-08-05 Nec Corp Integrated circuit device

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5153452A (en) * 1988-08-31 1992-10-06 Hitachi Ltd. Bipolar-MOS IC with internal voltage generator and LSI device with internal voltage generator
JPH02196469A (ja) * 1989-01-25 1990-08-03 Fujitsu Ltd 半導体装置
EP0715226A2 (en) 1994-11-30 1996-06-05 Sharp Kabushiki Kaisha Developing device
EP0889527A3 (en) * 1997-07-04 1999-08-25 Nec Corporation Semiconductor device with reduced number of trough holes and method of manufacturing the same

Also Published As

Publication number Publication date
JPH058584B2 (enrdf_load_stackoverflow) 1993-02-02

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