JPS59106155A - 半導体装置の製造方法 - Google Patents
半導体装置の製造方法Info
- Publication number
- JPS59106155A JPS59106155A JP57217203A JP21720382A JPS59106155A JP S59106155 A JPS59106155 A JP S59106155A JP 57217203 A JP57217203 A JP 57217203A JP 21720382 A JP21720382 A JP 21720382A JP S59106155 A JPS59106155 A JP S59106155A
- Authority
- JP
- Japan
- Prior art keywords
- region
- base
- forming
- emitter
- ion
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 239000004065 semiconductor Substances 0.000 title claims abstract description 8
- 238000004519 manufacturing process Methods 0.000 title claims description 5
- 239000012535 impurity Substances 0.000 claims abstract description 15
- 239000000758 substrate Substances 0.000 claims abstract description 6
- 238000005468 ion implantation Methods 0.000 claims abstract description 3
- 230000015572 biosynthetic process Effects 0.000 claims description 9
- 238000000034 method Methods 0.000 claims description 9
- 238000000151 deposition Methods 0.000 claims description 2
- 239000002689 soil Substances 0.000 claims description 2
- 238000005530 etching Methods 0.000 claims 1
- 229910021420 polycrystalline silicon Inorganic materials 0.000 abstract description 13
- 238000009792 diffusion process Methods 0.000 abstract description 10
- 238000009826 distribution Methods 0.000 abstract description 8
- ZOXJGFHDIHLPTG-UHFFFAOYSA-N Boron Chemical compound [B] ZOXJGFHDIHLPTG-UHFFFAOYSA-N 0.000 abstract description 5
- 229910052796 boron Inorganic materials 0.000 abstract description 5
- 239000013078 crystal Substances 0.000 abstract description 5
- 238000010438 heat treatment Methods 0.000 abstract description 5
- 238000010884 ion-beam technique Methods 0.000 abstract description 4
- 229910021417 amorphous silicon Inorganic materials 0.000 abstract description 2
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 abstract 2
- 229910052757 nitrogen Inorganic materials 0.000 abstract 1
- 150000002500 ions Chemical class 0.000 description 7
- RQNWIZPPADIBDY-UHFFFAOYSA-N arsenic atom Chemical group [As] RQNWIZPPADIBDY-UHFFFAOYSA-N 0.000 description 5
- 229910052785 arsenic Inorganic materials 0.000 description 4
- 238000010586 diagram Methods 0.000 description 4
- 229910021419 crystalline silicon Inorganic materials 0.000 description 3
- 230000000694 effects Effects 0.000 description 3
- 230000001133 acceleration Effects 0.000 description 2
- 238000002513 implantation Methods 0.000 description 2
- 229910021421 monocrystalline silicon Inorganic materials 0.000 description 2
- 239000004570 mortar (masonry) Substances 0.000 description 2
- 230000003647 oxidation Effects 0.000 description 2
- 238000007254 oxidation reaction Methods 0.000 description 2
- 230000005855 radiation Effects 0.000 description 2
- 240000005979 Hordeum vulgare Species 0.000 description 1
- 235000007340 Hordeum vulgare Nutrition 0.000 description 1
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical group [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 1
- 239000002253 acid Substances 0.000 description 1
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 1
- 229910052782 aluminium Inorganic materials 0.000 description 1
- 235000013339 cereals Nutrition 0.000 description 1
- 150000001793 charged compounds Chemical class 0.000 description 1
- 239000003795 chemical substances by application Substances 0.000 description 1
- 238000007796 conventional method Methods 0.000 description 1
- 238000005520 cutting process Methods 0.000 description 1
- 230000003247 decreasing effect Effects 0.000 description 1
- 238000001312 dry etching Methods 0.000 description 1
- 210000003127 knee Anatomy 0.000 description 1
- 238000005121 nitriding Methods 0.000 description 1
- 239000012299 nitrogen atmosphere Substances 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D48/00—Individual devices not covered by groups H10D1/00 - H10D44/00
- H10D48/30—Devices controlled by electric currents or voltages
- H10D48/32—Devices controlled by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H10D48/34—Bipolar devices
- H10D48/345—Bipolar transistors having ohmic electrodes on emitter-like, base-like, and collector-like regions
Landscapes
- Bipolar Transistors (AREA)
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP57217203A JPS59106155A (ja) | 1982-12-10 | 1982-12-10 | 半導体装置の製造方法 |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP57217203A JPS59106155A (ja) | 1982-12-10 | 1982-12-10 | 半導体装置の製造方法 |
Publications (2)
Publication Number | Publication Date |
---|---|
JPS59106155A true JPS59106155A (ja) | 1984-06-19 |
JPH0418460B2 JPH0418460B2 (enrdf_load_stackoverflow) | 1992-03-27 |
Family
ID=16700477
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP57217203A Granted JPS59106155A (ja) | 1982-12-10 | 1982-12-10 | 半導体装置の製造方法 |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPS59106155A (enrdf_load_stackoverflow) |
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH03173134A (ja) * | 1989-11-30 | 1991-07-26 | Canon Inc | 半導体装置及び電子装置 |
-
1982
- 1982-12-10 JP JP57217203A patent/JPS59106155A/ja active Granted
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH03173134A (ja) * | 1989-11-30 | 1991-07-26 | Canon Inc | 半導体装置及び電子装置 |
Also Published As
Publication number | Publication date |
---|---|
JPH0418460B2 (enrdf_load_stackoverflow) | 1992-03-27 |
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