JPS59100559A - 半導体装置 - Google Patents

半導体装置

Info

Publication number
JPS59100559A
JPS59100559A JP57211606A JP21160682A JPS59100559A JP S59100559 A JPS59100559 A JP S59100559A JP 57211606 A JP57211606 A JP 57211606A JP 21160682 A JP21160682 A JP 21160682A JP S59100559 A JPS59100559 A JP S59100559A
Authority
JP
Japan
Prior art keywords
insulating film
film
semiconductor device
layer
electrode outlet
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP57211606A
Other languages
English (en)
Japanese (ja)
Other versions
JPH038583B2 (enExample
Inventor
Ryuichi Matsuo
龍一 松尾
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Mitsubishi Electric Corp
Original Assignee
Mitsubishi Electric Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Mitsubishi Electric Corp filed Critical Mitsubishi Electric Corp
Priority to JP57211606A priority Critical patent/JPS59100559A/ja
Publication of JPS59100559A publication Critical patent/JPS59100559A/ja
Publication of JPH038583B2 publication Critical patent/JPH038583B2/ja
Granted legal-status Critical Current

Links

Classifications

    • H10W74/137—
    • H10W72/923—
    • H10W72/934—
    • H10W72/983—

Landscapes

  • Wire Bonding (AREA)
  • Non-Volatile Memory (AREA)
  • Local Oxidation Of Silicon (AREA)
JP57211606A 1982-11-30 1982-11-30 半導体装置 Granted JPS59100559A (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP57211606A JPS59100559A (ja) 1982-11-30 1982-11-30 半導体装置

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP57211606A JPS59100559A (ja) 1982-11-30 1982-11-30 半導体装置

Publications (2)

Publication Number Publication Date
JPS59100559A true JPS59100559A (ja) 1984-06-09
JPH038583B2 JPH038583B2 (enExample) 1991-02-06

Family

ID=16608544

Family Applications (1)

Application Number Title Priority Date Filing Date
JP57211606A Granted JPS59100559A (ja) 1982-11-30 1982-11-30 半導体装置

Country Status (1)

Country Link
JP (1) JPS59100559A (enExample)

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5070386A (en) * 1989-08-09 1991-12-03 Seiko Instruments Inc. Passivation layer structure with through-holes for semiconductor device
JP2006351767A (ja) * 2005-06-15 2006-12-28 Sanyo Electric Co Ltd 半導体装置及びその製造方法
JP2017112225A (ja) * 2015-12-16 2017-06-22 シャープ株式会社 半導体装置

Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS57180138A (en) * 1981-04-30 1982-11-06 Nec Corp Semiconductor device
JPS57202749A (en) * 1981-06-08 1982-12-11 Toshiba Corp Semiconductor device
JPS58219741A (ja) * 1982-06-15 1983-12-21 Nippon Gakki Seizo Kk 半導体装置

Patent Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS57180138A (en) * 1981-04-30 1982-11-06 Nec Corp Semiconductor device
JPS57202749A (en) * 1981-06-08 1982-12-11 Toshiba Corp Semiconductor device
JPS58219741A (ja) * 1982-06-15 1983-12-21 Nippon Gakki Seizo Kk 半導体装置

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5070386A (en) * 1989-08-09 1991-12-03 Seiko Instruments Inc. Passivation layer structure with through-holes for semiconductor device
JP2006351767A (ja) * 2005-06-15 2006-12-28 Sanyo Electric Co Ltd 半導体装置及びその製造方法
JP2017112225A (ja) * 2015-12-16 2017-06-22 シャープ株式会社 半導体装置

Also Published As

Publication number Publication date
JPH038583B2 (enExample) 1991-02-06

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