JPS59100415A - マトリクス形液晶表示装置 - Google Patents
マトリクス形液晶表示装置Info
- Publication number
- JPS59100415A JPS59100415A JP57211609A JP21160982A JPS59100415A JP S59100415 A JPS59100415 A JP S59100415A JP 57211609 A JP57211609 A JP 57211609A JP 21160982 A JP21160982 A JP 21160982A JP S59100415 A JPS59100415 A JP S59100415A
- Authority
- JP
- Japan
- Prior art keywords
- liquid crystal
- crystal display
- display device
- type liquid
- gate
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 239000004973 liquid crystal related substance Substances 0.000 title claims description 22
- 239000011159 matrix material Substances 0.000 title claims description 12
- 239000010408 film Substances 0.000 claims abstract description 25
- 229910021420 polycrystalline silicon Inorganic materials 0.000 claims abstract description 12
- 239000012535 impurity Substances 0.000 claims abstract description 9
- 239000010409 thin film Substances 0.000 claims abstract description 5
- 229910000838 Al alloy Inorganic materials 0.000 claims abstract 2
- 239000010410 layer Substances 0.000 claims abstract 2
- 239000003990 capacitor Substances 0.000 claims description 6
- 229910052751 metal Inorganic materials 0.000 claims description 6
- 239000002184 metal Substances 0.000 claims description 6
- 229910052782 aluminium Inorganic materials 0.000 claims description 2
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 claims description 2
- 239000007769 metal material Substances 0.000 claims 1
- 239000011229 interlayer Substances 0.000 abstract description 13
- 239000000758 substrate Substances 0.000 abstract description 12
- 238000000059 patterning Methods 0.000 abstract description 4
- 238000009413 insulation Methods 0.000 abstract description 3
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 abstract description 2
- 238000005268 plasma chemical vapour deposition Methods 0.000 abstract description 2
- 238000004544 sputter deposition Methods 0.000 abstract description 2
- 238000001771 vacuum deposition Methods 0.000 abstract 1
- 238000010586 diagram Methods 0.000 description 6
- 239000004065 semiconductor Substances 0.000 description 5
- 239000004020 conductor Substances 0.000 description 3
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 2
- 229910045601 alloy Inorganic materials 0.000 description 2
- 239000000956 alloy Substances 0.000 description 2
- 230000015572 biosynthetic process Effects 0.000 description 2
- 239000013078 crystal Substances 0.000 description 2
- 230000007547 defect Effects 0.000 description 2
- 239000012528 membrane Substances 0.000 description 2
- 150000002739 metals Chemical class 0.000 description 2
- 238000000034 method Methods 0.000 description 2
- 238000007740 vapor deposition Methods 0.000 description 2
- 229910052581 Si3N4 Inorganic materials 0.000 description 1
- 241001575049 Sonia Species 0.000 description 1
- PBZHKWVYRQRZQC-UHFFFAOYSA-N [Si+4].[O-][N+]([O-])=O.[O-][N+]([O-])=O.[O-][N+]([O-])=O.[O-][N+]([O-])=O Chemical compound [Si+4].[O-][N+]([O-])=O.[O-][N+]([O-])=O.[O-][N+]([O-])=O.[O-][N+]([O-])=O PBZHKWVYRQRZQC-UHFFFAOYSA-N 0.000 description 1
- 238000005229 chemical vapour deposition Methods 0.000 description 1
- 238000010276 construction Methods 0.000 description 1
- 239000013256 coordination polymer Substances 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 238000004518 low pressure chemical vapour deposition Methods 0.000 description 1
- 239000000463 material Substances 0.000 description 1
- 239000000203 mixture Substances 0.000 description 1
- 229910052698 phosphorus Inorganic materials 0.000 description 1
- 239000011574 phosphorus Substances 0.000 description 1
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 1
Classifications
-
- G—PHYSICS
- G02—OPTICS
- G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
- G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
- G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour
- G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour based on liquid crystals, e.g. single liquid crystal display cells
- G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
- G02F1/136—Liquid crystal cells structurally associated with a semi-conducting layer or substrate, e.g. cells forming part of an integrated circuit
- G02F1/1362—Active matrix addressed cells
- G02F1/1368—Active matrix addressed cells in which the switching element is a three-electrode device
-
- G—PHYSICS
- G02—OPTICS
- G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
- G02F2202/00—Materials and properties
- G02F2202/10—Materials and properties semiconductor
- G02F2202/104—Materials and properties semiconductor poly-Si
Landscapes
- Physics & Mathematics (AREA)
- Liquid Crystal (AREA)
- Nonlinear Science (AREA)
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Mathematical Physics (AREA)
- Chemical & Material Sciences (AREA)
- Crystallography & Structural Chemistry (AREA)
- General Physics & Mathematics (AREA)
- Optics & Photonics (AREA)
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP57211609A JPS59100415A (ja) | 1982-11-30 | 1982-11-30 | マトリクス形液晶表示装置 |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP57211609A JPS59100415A (ja) | 1982-11-30 | 1982-11-30 | マトリクス形液晶表示装置 |
Publications (2)
Publication Number | Publication Date |
---|---|
JPS59100415A true JPS59100415A (ja) | 1984-06-09 |
JPH0362244B2 JPH0362244B2 (enrdf_load_stackoverflow) | 1991-09-25 |
Family
ID=16608594
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP57211609A Granted JPS59100415A (ja) | 1982-11-30 | 1982-11-30 | マトリクス形液晶表示装置 |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPS59100415A (enrdf_load_stackoverflow) |
Cited By (8)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS6136824U (ja) * | 1984-08-06 | 1986-03-07 | 三洋電機株式会社 | 表示装置 |
JPS6242127A (ja) * | 1985-07-19 | 1987-02-24 | ゼネラル・エレクトリツク・カンパニイ | 光阻止及びセル・スペ−サ構造を持つ液晶表示装置 |
JPH01134344A (ja) * | 1987-11-19 | 1989-05-26 | Sharp Corp | アクティブマトリクス基板 |
JPH01136123A (ja) * | 1987-11-21 | 1989-05-29 | Sharp Corp | アクティブマトリックス基板 |
JPH01177020A (ja) * | 1987-12-28 | 1989-07-13 | Sharp Corp | アクティブマトリックス表示装置 |
US5212574A (en) * | 1989-07-05 | 1993-05-18 | Sharp Kabushiki Kaisha | Active matrix board having double-layer scan lines and capacity lines with discontinuous lower scan lines and lower capacity lines |
EP0683525A1 (en) * | 1994-05-20 | 1995-11-22 | Sony Corporation | Thin-film transistor array for display |
JP2003186049A (ja) * | 2002-10-17 | 2003-07-03 | Seiko Epson Corp | 液晶装置及び電子機器 |
Citations (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS5888784A (ja) * | 1981-11-24 | 1983-05-26 | セイコーエプソン株式会社 | 液晶表示装置 |
-
1982
- 1982-11-30 JP JP57211609A patent/JPS59100415A/ja active Granted
Patent Citations (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS5888784A (ja) * | 1981-11-24 | 1983-05-26 | セイコーエプソン株式会社 | 液晶表示装置 |
Cited By (9)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS6136824U (ja) * | 1984-08-06 | 1986-03-07 | 三洋電機株式会社 | 表示装置 |
JPS6242127A (ja) * | 1985-07-19 | 1987-02-24 | ゼネラル・エレクトリツク・カンパニイ | 光阻止及びセル・スペ−サ構造を持つ液晶表示装置 |
JPH01134344A (ja) * | 1987-11-19 | 1989-05-26 | Sharp Corp | アクティブマトリクス基板 |
JPH01136123A (ja) * | 1987-11-21 | 1989-05-29 | Sharp Corp | アクティブマトリックス基板 |
JPH01177020A (ja) * | 1987-12-28 | 1989-07-13 | Sharp Corp | アクティブマトリックス表示装置 |
US5212574A (en) * | 1989-07-05 | 1993-05-18 | Sharp Kabushiki Kaisha | Active matrix board having double-layer scan lines and capacity lines with discontinuous lower scan lines and lower capacity lines |
EP0683525A1 (en) * | 1994-05-20 | 1995-11-22 | Sony Corporation | Thin-film transistor array for display |
US5670795A (en) * | 1994-05-20 | 1997-09-23 | Sony Corporation | Thin-film transistor array for display |
JP2003186049A (ja) * | 2002-10-17 | 2003-07-03 | Seiko Epson Corp | 液晶装置及び電子機器 |
Also Published As
Publication number | Publication date |
---|---|
JPH0362244B2 (enrdf_load_stackoverflow) | 1991-09-25 |
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