JPS6112271B2 - - Google Patents
Info
- Publication number
- JPS6112271B2 JPS6112271B2 JP56120122A JP12012281A JPS6112271B2 JP S6112271 B2 JPS6112271 B2 JP S6112271B2 JP 56120122 A JP56120122 A JP 56120122A JP 12012281 A JP12012281 A JP 12012281A JP S6112271 B2 JPS6112271 B2 JP S6112271B2
- Authority
- JP
- Japan
- Prior art keywords
- film
- liquid crystal
- electrode substrate
- light
- substrate
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
- 239000010408 film Substances 0.000 claims description 59
- 239000000758 substrate Substances 0.000 claims description 41
- 239000010410 layer Substances 0.000 claims description 23
- 239000004973 liquid crystal related substance Substances 0.000 claims description 22
- 239000003990 capacitor Substances 0.000 claims description 19
- 239000011159 matrix material Substances 0.000 claims description 13
- 239000011229 interlayer Substances 0.000 claims description 12
- 239000004020 conductor Substances 0.000 claims description 3
- 229910045601 alloy Inorganic materials 0.000 claims description 2
- 239000000956 alloy Substances 0.000 claims description 2
- 229910052737 gold Inorganic materials 0.000 claims description 2
- 229910052750 molybdenum Inorganic materials 0.000 claims description 2
- 229910052759 nickel Inorganic materials 0.000 claims description 2
- 229910052697 platinum Inorganic materials 0.000 claims description 2
- 229910052709 silver Inorganic materials 0.000 claims description 2
- 229910052719 titanium Inorganic materials 0.000 claims description 2
- 229910052804 chromium Inorganic materials 0.000 claims 1
- 238000009792 diffusion process Methods 0.000 description 10
- 239000004065 semiconductor Substances 0.000 description 7
- 238000004519 manufacturing process Methods 0.000 description 6
- 238000000034 method Methods 0.000 description 6
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 3
- 230000000694 effects Effects 0.000 description 3
- 239000012535 impurity Substances 0.000 description 3
- 239000000463 material Substances 0.000 description 3
- 229920001721 polyimide Polymers 0.000 description 3
- 239000009719 polyimide resin Substances 0.000 description 3
- 229910052710 silicon Inorganic materials 0.000 description 3
- 239000010703 silicon Substances 0.000 description 3
- 239000008186 active pharmaceutical agent Substances 0.000 description 2
- 239000002184 metal Substances 0.000 description 2
- 229910052751 metal Inorganic materials 0.000 description 2
- 239000004988 Nematic liquid crystal Substances 0.000 description 1
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 description 1
- 229910004298 SiO 2 Inorganic materials 0.000 description 1
- 229910021417 amorphous silicon Inorganic materials 0.000 description 1
- UHYPYGJEEGLRJD-UHFFFAOYSA-N cadmium(2+);selenium(2-) Chemical compound [Se-2].[Cd+2] UHYPYGJEEGLRJD-UHFFFAOYSA-N 0.000 description 1
- 238000005229 chemical vapour deposition Methods 0.000 description 1
- 230000007547 defect Effects 0.000 description 1
- 230000006866 deterioration Effects 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 238000002474 experimental method Methods 0.000 description 1
- 239000011521 glass Substances 0.000 description 1
- 238000005286 illumination Methods 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 229910021421 monocrystalline silicon Inorganic materials 0.000 description 1
- 229910052698 phosphorus Inorganic materials 0.000 description 1
- 239000011574 phosphorus Substances 0.000 description 1
- 229910021420 polycrystalline silicon Inorganic materials 0.000 description 1
- 125000006850 spacer group Chemical group 0.000 description 1
- 239000010409 thin film Substances 0.000 description 1
Landscapes
- Liquid Crystal (AREA)
- Devices For Indicating Variable Information By Combining Individual Elements (AREA)
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP56120122A JPS5821784A (ja) | 1981-07-31 | 1981-07-31 | マトリクス形液晶表示装置 |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP56120122A JPS5821784A (ja) | 1981-07-31 | 1981-07-31 | マトリクス形液晶表示装置 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS5821784A JPS5821784A (ja) | 1983-02-08 |
| JPS6112271B2 true JPS6112271B2 (enrdf_load_stackoverflow) | 1986-04-07 |
Family
ID=14778504
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP56120122A Granted JPS5821784A (ja) | 1981-07-31 | 1981-07-31 | マトリクス形液晶表示装置 |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS5821784A (enrdf_load_stackoverflow) |
Families Citing this family (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US5032883A (en) * | 1987-09-09 | 1991-07-16 | Casio Computer Co., Ltd. | Thin film transistor and method of manufacturing the same |
| US5229644A (en) * | 1987-09-09 | 1993-07-20 | Casio Computer Co., Ltd. | Thin film transistor having a transparent electrode and substrate |
| US5166085A (en) * | 1987-09-09 | 1992-11-24 | Casio Computer Co., Ltd. | Method of manufacturing a thin film transistor |
| GB9827901D0 (en) * | 1998-12-19 | 1999-02-10 | Secr Defence | Active semiconductor |
| US20120299074A1 (en) * | 2011-05-24 | 2012-11-29 | Sharp Kabushiki Kaisha | Semiconductor device |
| JP7183019B2 (ja) | 2018-12-11 | 2022-12-05 | 株式会社ジャパンディスプレイ | 表示装置 |
-
1981
- 1981-07-31 JP JP56120122A patent/JPS5821784A/ja active Granted
Also Published As
| Publication number | Publication date |
|---|---|
| JPS5821784A (ja) | 1983-02-08 |
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