JPH0362243B2 - - Google Patents
Info
- Publication number
- JPH0362243B2 JPH0362243B2 JP57208117A JP20811782A JPH0362243B2 JP H0362243 B2 JPH0362243 B2 JP H0362243B2 JP 57208117 A JP57208117 A JP 57208117A JP 20811782 A JP20811782 A JP 20811782A JP H0362243 B2 JPH0362243 B2 JP H0362243B2
- Authority
- JP
- Japan
- Prior art keywords
- line
- drain
- display device
- source
- tft array
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Lifetime
Links
- 239000011159 matrix material Substances 0.000 claims description 21
- 229910052751 metal Inorganic materials 0.000 claims description 7
- 239000002184 metal Substances 0.000 claims description 7
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 claims description 4
- 229910052698 phosphorus Inorganic materials 0.000 claims description 4
- 239000011574 phosphorus Substances 0.000 claims description 4
- ZOXJGFHDIHLPTG-UHFFFAOYSA-N Boron Chemical compound [B] ZOXJGFHDIHLPTG-UHFFFAOYSA-N 0.000 claims description 3
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims description 3
- 229910052796 boron Inorganic materials 0.000 claims description 3
- 229910052710 silicon Inorganic materials 0.000 claims description 3
- 239000010703 silicon Substances 0.000 claims description 3
- 239000004973 liquid crystal related substance Substances 0.000 description 19
- 239000004065 semiconductor Substances 0.000 description 16
- 239000010410 layer Substances 0.000 description 12
- 239000010408 film Substances 0.000 description 11
- 239000012535 impurity Substances 0.000 description 9
- 239000011229 interlayer Substances 0.000 description 7
- 239000000758 substrate Substances 0.000 description 7
- 229910052782 aluminium Inorganic materials 0.000 description 6
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 6
- 229910021420 polycrystalline silicon Inorganic materials 0.000 description 6
- 238000000034 method Methods 0.000 description 5
- 239000003990 capacitor Substances 0.000 description 3
- 238000009792 diffusion process Methods 0.000 description 3
- 238000009413 insulation Methods 0.000 description 3
- 238000000059 patterning Methods 0.000 description 3
- 229910052581 Si3N4 Inorganic materials 0.000 description 2
- 229910004298 SiO 2 Inorganic materials 0.000 description 2
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 2
- 238000005229 chemical vapour deposition Methods 0.000 description 2
- 230000007547 defect Effects 0.000 description 2
- 238000010586 diagram Methods 0.000 description 2
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 2
- 238000007740 vapor deposition Methods 0.000 description 2
- 229910000838 Al alloy Inorganic materials 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- 239000004020 conductor Substances 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 238000005468 ion implantation Methods 0.000 description 1
- 238000004518 low pressure chemical vapour deposition Methods 0.000 description 1
- 239000000463 material Substances 0.000 description 1
- 150000002739 metals Chemical class 0.000 description 1
- 230000003647 oxidation Effects 0.000 description 1
- 238000007254 oxidation reaction Methods 0.000 description 1
- 238000001259 photo etching Methods 0.000 description 1
- 239000002356 single layer Substances 0.000 description 1
- 238000004544 sputter deposition Methods 0.000 description 1
- 239000010409 thin film Substances 0.000 description 1
- 238000000927 vapour-phase epitaxy Methods 0.000 description 1
Landscapes
- Liquid Crystal (AREA)
- Devices For Indicating Variable Information By Combining Individual Elements (AREA)
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP57208117A JPS5997178A (ja) | 1982-11-25 | 1982-11-25 | マトリクス型表示装置 |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP57208117A JPS5997178A (ja) | 1982-11-25 | 1982-11-25 | マトリクス型表示装置 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS5997178A JPS5997178A (ja) | 1984-06-04 |
| JPH0362243B2 true JPH0362243B2 (enrdf_load_stackoverflow) | 1991-09-25 |
Family
ID=16550911
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP57208117A Granted JPS5997178A (ja) | 1982-11-25 | 1982-11-25 | マトリクス型表示装置 |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS5997178A (enrdf_load_stackoverflow) |
Families Citing this family (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS60140926U (ja) * | 1984-02-24 | 1985-09-18 | 三洋電機株式会社 | 表示装置 |
| JPH0610349Y2 (ja) * | 1984-12-30 | 1994-03-16 | ホシデン株式会社 | 液晶表示素子 |
| JPS61179486A (ja) * | 1985-02-04 | 1986-08-12 | 三菱電機株式会社 | 半導体装置 |
| FR2585167B1 (fr) * | 1985-07-19 | 1993-05-07 | Gen Electric | Structures conductrices redondantes pour affichages a cristaux liquides commandes par des transistors a effet de champ en couche mince |
-
1982
- 1982-11-25 JP JP57208117A patent/JPS5997178A/ja active Granted
Also Published As
| Publication number | Publication date |
|---|---|
| JPS5997178A (ja) | 1984-06-04 |
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