JPS5898961A - 電荷転送装置 - Google Patents

電荷転送装置

Info

Publication number
JPS5898961A
JPS5898961A JP56198191A JP19819181A JPS5898961A JP S5898961 A JPS5898961 A JP S5898961A JP 56198191 A JP56198191 A JP 56198191A JP 19819181 A JP19819181 A JP 19819181A JP S5898961 A JPS5898961 A JP S5898961A
Authority
JP
Japan
Prior art keywords
transfer
phase
electrodes
electrode
charge
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP56198191A
Other languages
English (en)
Japanese (ja)
Other versions
JPH0245345B2 (enrdf_load_stackoverflow
Inventor
Tetsuo Yamada
哲生 山田
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Toshiba Corp
Original Assignee
Toshiba Corp
Tokyo Shibaura Electric Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Toshiba Corp, Tokyo Shibaura Electric Co Ltd filed Critical Toshiba Corp
Priority to JP56198191A priority Critical patent/JPS5898961A/ja
Publication of JPS5898961A publication Critical patent/JPS5898961A/ja
Publication of JPH0245345B2 publication Critical patent/JPH0245345B2/ja
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/10—Integrated devices
    • H10F39/12—Image sensors
    • H10F39/15—Charge-coupled device [CCD] image sensors
    • H10F39/152—One-dimensional array CCD image sensors

Landscapes

  • Solid State Image Pick-Up Elements (AREA)
JP56198191A 1981-12-09 1981-12-09 電荷転送装置 Granted JPS5898961A (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP56198191A JPS5898961A (ja) 1981-12-09 1981-12-09 電荷転送装置

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP56198191A JPS5898961A (ja) 1981-12-09 1981-12-09 電荷転送装置

Publications (2)

Publication Number Publication Date
JPS5898961A true JPS5898961A (ja) 1983-06-13
JPH0245345B2 JPH0245345B2 (enrdf_load_stackoverflow) 1990-10-09

Family

ID=16386981

Family Applications (1)

Application Number Title Priority Date Filing Date
JP56198191A Granted JPS5898961A (ja) 1981-12-09 1981-12-09 電荷転送装置

Country Status (1)

Country Link
JP (1) JPS5898961A (enrdf_load_stackoverflow)

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH01130567A (ja) * 1987-11-17 1989-05-23 Sanyo Electric Co Ltd 電荷転送レジスタ
US5338948A (en) * 1991-05-10 1994-08-16 Photometrics, Ltd. Charge-coupled device with open gate structure
US5998815A (en) * 1991-07-09 1999-12-07 Sony Corporation CCD linear sensor

Citations (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS50123285A (enrdf_load_stackoverflow) * 1974-03-16 1975-09-27
JPS5337392A (en) * 1976-09-17 1978-04-06 Sanyo Electric Co Ltd Driving pulse supplying method of charge coupled type semiconductor device
JPS53111284A (en) * 1971-10-27 1978-09-28 Philips Nv Charge coupled semiconductor
JPS5591869A (en) * 1978-12-29 1980-07-11 Ibm Charge coupled device
JPS55179074U (enrdf_load_stackoverflow) * 1979-06-08 1980-12-23
JPS5861661A (ja) * 1981-10-08 1983-04-12 Toshiba Corp 電荷転送装置

Patent Citations (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS53111284A (en) * 1971-10-27 1978-09-28 Philips Nv Charge coupled semiconductor
JPS50123285A (enrdf_load_stackoverflow) * 1974-03-16 1975-09-27
JPS5337392A (en) * 1976-09-17 1978-04-06 Sanyo Electric Co Ltd Driving pulse supplying method of charge coupled type semiconductor device
JPS5591869A (en) * 1978-12-29 1980-07-11 Ibm Charge coupled device
JPS55179074U (enrdf_load_stackoverflow) * 1979-06-08 1980-12-23
JPS5861661A (ja) * 1981-10-08 1983-04-12 Toshiba Corp 電荷転送装置

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH01130567A (ja) * 1987-11-17 1989-05-23 Sanyo Electric Co Ltd 電荷転送レジスタ
US5338948A (en) * 1991-05-10 1994-08-16 Photometrics, Ltd. Charge-coupled device with open gate structure
US5998815A (en) * 1991-07-09 1999-12-07 Sony Corporation CCD linear sensor
EP0522436B1 (en) * 1991-07-09 2000-01-19 Sony Corporation CCD linear sensor

Also Published As

Publication number Publication date
JPH0245345B2 (enrdf_load_stackoverflow) 1990-10-09

Similar Documents

Publication Publication Date Title
EP0746144A2 (en) CCD type solid state image pickup device
JPS5898961A (ja) 電荷転送装置
JPS607390B2 (ja) 電荷結合型半導体装置の駆動パルス給電方法
KR19990030042A (ko) 씨씨디형 고체촬상장치
JPH07161970A (ja) 固体撮像装置
US7336757B2 (en) Charge-coupled device
JPH04369186A (ja) 電荷結合装置
EP0420764B1 (en) Charge transfer device with meander channel
EP0571840B1 (en) Multiple array linear CCD imager
JPH03123278A (ja) 固体撮像装置
JP2001244448A (ja) リニアイメージセンサおよびその使用方法
Hartsell et al. Design and performance of a three phase double level metal 160× 100 element CCD imager
JP3008629B2 (ja) 固体撮像素子
JP3713863B2 (ja) 固体撮像素子
JPS63182857A (ja) 固体撮像装置及びその製造方法
JP2507725Y2 (ja) 固体撮像素子
JP2940803B2 (ja) 固体撮像素子
JPH0669048B2 (ja) 電荷転送装置
JP4222022B2 (ja) 固体撮像素子及びその駆動方法
JPH10135442A (ja) 固体撮像素子
JPH04180265A (ja) 固体撮像装置
JPH0131751B2 (enrdf_load_stackoverflow)
JPH1197665A (ja) 固体撮像素子
JPS60189966A (ja) 電荷転送装置およびその駆動方法
JPS62171158A (ja) 電荷転送装置