JPH0245345B2 - - Google Patents

Info

Publication number
JPH0245345B2
JPH0245345B2 JP56198191A JP19819181A JPH0245345B2 JP H0245345 B2 JPH0245345 B2 JP H0245345B2 JP 56198191 A JP56198191 A JP 56198191A JP 19819181 A JP19819181 A JP 19819181A JP H0245345 B2 JPH0245345 B2 JP H0245345B2
Authority
JP
Japan
Prior art keywords
transfer
phase
electrode
photoelectric conversion
electrodes
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
JP56198191A
Other languages
English (en)
Japanese (ja)
Other versions
JPS5898961A (ja
Inventor
Tetsuo Yamada
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Toshiba Corp
Original Assignee
Tokyo Shibaura Electric Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Tokyo Shibaura Electric Co Ltd filed Critical Tokyo Shibaura Electric Co Ltd
Priority to JP56198191A priority Critical patent/JPS5898961A/ja
Publication of JPS5898961A publication Critical patent/JPS5898961A/ja
Publication of JPH0245345B2 publication Critical patent/JPH0245345B2/ja
Granted legal-status Critical Current

Links

Classifications

    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10FINORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/10Integrated devices
    • H10F39/12Image sensors
    • H10F39/15Charge-coupled device [CCD] image sensors
    • H10F39/152One-dimensional array CCD image sensors

Landscapes

  • Solid State Image Pick-Up Elements (AREA)
JP56198191A 1981-12-09 1981-12-09 電荷転送装置 Granted JPS5898961A (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP56198191A JPS5898961A (ja) 1981-12-09 1981-12-09 電荷転送装置

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP56198191A JPS5898961A (ja) 1981-12-09 1981-12-09 電荷転送装置

Publications (2)

Publication Number Publication Date
JPS5898961A JPS5898961A (ja) 1983-06-13
JPH0245345B2 true JPH0245345B2 (enrdf_load_stackoverflow) 1990-10-09

Family

ID=16386981

Family Applications (1)

Application Number Title Priority Date Filing Date
JP56198191A Granted JPS5898961A (ja) 1981-12-09 1981-12-09 電荷転送装置

Country Status (1)

Country Link
JP (1) JPS5898961A (enrdf_load_stackoverflow)

Families Citing this family (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH0779161B2 (ja) * 1987-11-17 1995-08-23 三洋電機株式会社 電荷転送レジスタ
US5338948A (en) * 1991-05-10 1994-08-16 Photometrics, Ltd. Charge-coupled device with open gate structure
JP3146526B2 (ja) * 1991-07-09 2001-03-19 ソニー株式会社 Ccd撮像素子

Family Cites Families (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
NL176406C (nl) * 1971-10-27 1985-04-01 Philips Nv Ladingsgekoppelde halfgeleiderinrichting met een halfgeleiderlichaam bevattende een aan een oppervlak grenzende halfgeleiderlaag en middelen om informatie in de vorm van pakketten meerderheidsladingsdragers in te voeren in de halfgeleiderlaag.
JPS50123285A (enrdf_load_stackoverflow) * 1974-03-16 1975-09-27
JPS607390B2 (ja) * 1976-09-17 1985-02-23 三洋電機株式会社 電荷結合型半導体装置の駆動パルス給電方法
US4236830A (en) * 1978-12-29 1980-12-02 International Business Machines Corporation CCD Parallel-serial and serial-parallel charge transfer method and apparatus
JPS55179074U (enrdf_load_stackoverflow) * 1979-06-08 1980-12-23
JPS5861661A (ja) * 1981-10-08 1983-04-12 Toshiba Corp 電荷転送装置

Also Published As

Publication number Publication date
JPS5898961A (ja) 1983-06-13

Similar Documents

Publication Publication Date Title
US5393997A (en) CCD having transfer electrodes of 3 layers
JPS607390B2 (ja) 電荷結合型半導体装置の駆動パルス給電方法
JPH0245345B2 (enrdf_load_stackoverflow)
JP2727770B2 (ja) 固体撮像装置
KR950013197A (ko) 저저항 게이트전극을 갖는 고체 촬상소자 및 그 제조방법
JPS62208668A (ja) 電荷移送形固体撮像素子
EP0571840B1 (en) Multiple array linear CCD imager
JP2714000B2 (ja) 固体撮像装置の製造方法
KR100647530B1 (ko) 고체촬상장치
JP3028823B2 (ja) 電荷結合素子およびこれを用いた固体撮像装置
JP3002365B2 (ja) 電荷転送装置及びその駆動方法
JP3318639B2 (ja) 電荷転送装置およびこれを用いた固体撮像装置
JP4222022B2 (ja) 固体撮像素子及びその駆動方法
JP2507725Y2 (ja) 固体撮像素子
JP2940803B2 (ja) 固体撮像素子
JPH0669048B2 (ja) 電荷転送装置
JP3713863B2 (ja) 固体撮像素子
JPH0436469B2 (enrdf_load_stackoverflow)
JP2002158925A (ja) 固体撮像素子およびその駆動方法
JPH0438838A (ja) 電荷結合素子
JP2634942B2 (ja) 半導体装置
JPH07106545A (ja) 固体撮像素子
JPH06252376A (ja) 固体撮像素子の配線構造
JPH1197665A (ja) 固体撮像素子
JP2000012824A (ja) 固体撮像装置