JPS5898944A - 半導体装置の製造方法 - Google Patents

半導体装置の製造方法

Info

Publication number
JPS5898944A
JPS5898944A JP56198934A JP19893481A JPS5898944A JP S5898944 A JPS5898944 A JP S5898944A JP 56198934 A JP56198934 A JP 56198934A JP 19893481 A JP19893481 A JP 19893481A JP S5898944 A JPS5898944 A JP S5898944A
Authority
JP
Japan
Prior art keywords
film
oxide film
silicon
silicon nitride
nitride film
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP56198934A
Other languages
English (en)
Japanese (ja)
Other versions
JPH0336302B2 (enrdf_load_html_response
Inventor
Kenji Kawakita
川北　憲司
Hiroyuki Sakai
坂井　弘之
Tsutomu Fujita
勉 藤田
Toyoki Takemoto
竹本　豊樹
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Panasonic Holdings Corp
Original Assignee
Matsushita Electric Industrial Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Matsushita Electric Industrial Co Ltd filed Critical Matsushita Electric Industrial Co Ltd
Priority to JP56198934A priority Critical patent/JPS5898944A/ja
Publication of JPS5898944A publication Critical patent/JPS5898944A/ja
Priority to US06/660,255 priority patent/US4563227A/en
Publication of JPH0336302B2 publication Critical patent/JPH0336302B2/ja
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
    • H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
    • H01L21/76—Making of isolation regions between components
    • H01L21/762—Dielectric regions, e.g. EPIC dielectric isolation, LOCOS; Trench refilling techniques, SOI technology, use of channel stoppers
    • H01L21/76224—Dielectric regions, e.g. EPIC dielectric isolation, LOCOS; Trench refilling techniques, SOI technology, use of channel stoppers using trench refilling with dielectric materials
    • H01L21/76232—Dielectric regions, e.g. EPIC dielectric isolation, LOCOS; Trench refilling techniques, SOI technology, use of channel stoppers using trench refilling with dielectric materials of trenches having a shape other than rectangular or V-shape, e.g. rounded corners, oblique or rounded trench walls
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
    • H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
    • H01L21/76—Making of isolation regions between components
    • H01L21/762—Dielectric regions, e.g. EPIC dielectric isolation, LOCOS; Trench refilling techniques, SOI technology, use of channel stoppers

Landscapes

  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Local Oxidation Of Silicon (AREA)
  • Element Separation (AREA)
JP56198934A 1981-12-08 1981-12-08 半導体装置の製造方法 Granted JPS5898944A (ja)

Priority Applications (2)

Application Number Priority Date Filing Date Title
JP56198934A JPS5898944A (ja) 1981-12-08 1981-12-08 半導体装置の製造方法
US06/660,255 US4563227A (en) 1981-12-08 1984-10-12 Method for manufacturing a semiconductor device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP56198934A JPS5898944A (ja) 1981-12-08 1981-12-08 半導体装置の製造方法

Publications (2)

Publication Number Publication Date
JPS5898944A true JPS5898944A (ja) 1983-06-13
JPH0336302B2 JPH0336302B2 (enrdf_load_html_response) 1991-05-31

Family

ID=16399393

Family Applications (1)

Application Number Title Priority Date Filing Date
JP56198934A Granted JPS5898944A (ja) 1981-12-08 1981-12-08 半導体装置の製造方法

Country Status (1)

Country Link
JP (1) JPS5898944A (enrdf_load_html_response)

Cited By (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4538343A (en) * 1984-06-15 1985-09-03 Texas Instruments Incorporated Channel stop isolation technology utilizing two-step etching and selective oxidation with sidewall masking
US4561172A (en) * 1984-06-15 1985-12-31 Texas Instruments Incorporated Integrated circuit fabrication method utilizing selective etching and oxidation to form isolation regions
JPS6148934A (ja) * 1984-08-16 1986-03-10 Matsushita Electronics Corp 半導体装置の製造方法
JPS6175539A (ja) * 1984-06-15 1986-04-17 テキサス　インスツルメンツ　インコ−ポレイテツド 集積回路の製造方法
US5182227A (en) * 1986-04-25 1993-01-26 Mitsubishi Denki Kabushiki Kaisha Semiconductor device and method for manufacturing the same
KR100336543B1 (ko) * 1993-09-23 2002-11-29 코닌클리케 필립스 일렉트로닉스 엔.브이. 반도체장치제조방법

Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS53120289A (en) * 1977-03-30 1978-10-20 Toshiba Corp Manufacture of semiconductor device

Patent Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS53120289A (en) * 1977-03-30 1978-10-20 Toshiba Corp Manufacture of semiconductor device

Cited By (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4538343A (en) * 1984-06-15 1985-09-03 Texas Instruments Incorporated Channel stop isolation technology utilizing two-step etching and selective oxidation with sidewall masking
US4561172A (en) * 1984-06-15 1985-12-31 Texas Instruments Incorporated Integrated circuit fabrication method utilizing selective etching and oxidation to form isolation regions
JPS6175540A (ja) * 1984-06-15 1986-04-17 テキサス　インスツルメンツ　インコ−ポレイテツド 集積回路の製法
JPS6175539A (ja) * 1984-06-15 1986-04-17 テキサス　インスツルメンツ　インコ−ポレイテツド 集積回路の製造方法
JPS6148934A (ja) * 1984-08-16 1986-03-10 Matsushita Electronics Corp 半導体装置の製造方法
US5182227A (en) * 1986-04-25 1993-01-26 Mitsubishi Denki Kabushiki Kaisha Semiconductor device and method for manufacturing the same
KR100336543B1 (ko) * 1993-09-23 2002-11-29 코닌클리케 필립스 일렉트로닉스 엔.브이. 반도체장치제조방법

Also Published As

Publication number Publication date
JPH0336302B2 (enrdf_load_html_response) 1991-05-31

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