JPH0249018B2 - - Google Patents
Info
- Publication number
- JPH0249018B2 JPH0249018B2 JP56084452A JP8445281A JPH0249018B2 JP H0249018 B2 JPH0249018 B2 JP H0249018B2 JP 56084452 A JP56084452 A JP 56084452A JP 8445281 A JP8445281 A JP 8445281A JP H0249018 B2 JPH0249018 B2 JP H0249018B2
- Authority
- JP
- Japan
- Prior art keywords
- silicon
- silicon nitride
- film
- nitride film
- substrate
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Lifetime
Links
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
- H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
- H01L21/76—Making of isolation regions between components
- H01L21/762—Dielectric regions, e.g. EPIC dielectric isolation, LOCOS; Trench refilling techniques, SOI technology, use of channel stoppers
- H01L21/76202—Dielectric regions, e.g. EPIC dielectric isolation, LOCOS; Trench refilling techniques, SOI technology, use of channel stoppers using a local oxidation of silicon, e.g. LOCOS, SWAMI, SILO
- H01L21/76205—Dielectric regions, e.g. EPIC dielectric isolation, LOCOS; Trench refilling techniques, SOI technology, use of channel stoppers using a local oxidation of silicon, e.g. LOCOS, SWAMI, SILO in a region being recessed from the surface, e.g. in a recess, groove, tub or trench region
- H01L21/7621—Dielectric regions, e.g. EPIC dielectric isolation, LOCOS; Trench refilling techniques, SOI technology, use of channel stoppers using a local oxidation of silicon, e.g. LOCOS, SWAMI, SILO in a region being recessed from the surface, e.g. in a recess, groove, tub or trench region the recessed region having a shape other than rectangular, e.g. rounded or oblique shape
Landscapes
- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Drying Of Semiconductors (AREA)
- Element Separation (AREA)
- Local Oxidation Of Silicon (AREA)
- Bipolar Transistors (AREA)
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP56084452A JPS57199232A (en) | 1981-06-03 | 1981-06-03 | Manufacture of semiconductor device |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP56084452A JPS57199232A (en) | 1981-06-03 | 1981-06-03 | Manufacture of semiconductor device |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS57199232A JPS57199232A (en) | 1982-12-07 |
| JPH0249018B2 true JPH0249018B2 (enrdf_load_html_response) | 1990-10-26 |
Family
ID=13831005
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP56084452A Granted JPS57199232A (en) | 1981-06-03 | 1981-06-03 | Manufacture of semiconductor device |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS57199232A (enrdf_load_html_response) |
Family Cites Families (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS50137086A (enrdf_load_html_response) * | 1974-04-17 | 1975-10-30 | ||
| JPS5232671A (en) * | 1975-09-08 | 1977-03-12 | Fujitsu Ltd | Manufacturing process of semiconductor device |
| JPS5444478A (en) * | 1977-09-14 | 1979-04-07 | Matsushita Electric Ind Co Ltd | Manufacture for semiconductor device |
| JPS5617020A (en) * | 1979-07-20 | 1981-02-18 | Toshiba Corp | Judgement of etching end point |
-
1981
- 1981-06-03 JP JP56084452A patent/JPS57199232A/ja active Granted
Also Published As
| Publication number | Publication date |
|---|---|
| JPS57199232A (en) | 1982-12-07 |
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