JPS57199232A - Manufacture of semiconductor device - Google Patents

Manufacture of semiconductor device

Info

Publication number
JPS57199232A
JPS57199232A JP56084452A JP8445281A JPS57199232A JP S57199232 A JPS57199232 A JP S57199232A JP 56084452 A JP56084452 A JP 56084452A JP 8445281 A JP8445281 A JP 8445281A JP S57199232 A JPS57199232 A JP S57199232A
Authority
JP
Japan
Prior art keywords
silicon
film
etching
silicon nitride
nitride film
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP56084452A
Other languages
English (en)
Japanese (ja)
Other versions
JPH0249018B2 (enrdf_load_html_response
Inventor
Hajime Kamioka
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Fujitsu Ltd
Original Assignee
Fujitsu Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Fujitsu Ltd filed Critical Fujitsu Ltd
Priority to JP56084452A priority Critical patent/JPS57199232A/ja
Publication of JPS57199232A publication Critical patent/JPS57199232A/ja
Publication of JPH0249018B2 publication Critical patent/JPH0249018B2/ja
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
    • H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
    • H01L21/76—Making of isolation regions between components
    • H01L21/762—Dielectric regions, e.g. EPIC dielectric isolation, LOCOS; Trench refilling techniques, SOI technology, use of channel stoppers
    • H01L21/76202—Dielectric regions, e.g. EPIC dielectric isolation, LOCOS; Trench refilling techniques, SOI technology, use of channel stoppers using a local oxidation of silicon, e.g. LOCOS, SWAMI, SILO
    • H01L21/76205—Dielectric regions, e.g. EPIC dielectric isolation, LOCOS; Trench refilling techniques, SOI technology, use of channel stoppers using a local oxidation of silicon, e.g. LOCOS, SWAMI, SILO in a region being recessed from the surface, e.g. in a recess, groove, tub or trench region
    • H01L21/7621—Dielectric regions, e.g. EPIC dielectric isolation, LOCOS; Trench refilling techniques, SOI technology, use of channel stoppers using a local oxidation of silicon, e.g. LOCOS, SWAMI, SILO in a region being recessed from the surface, e.g. in a recess, groove, tub or trench region the recessed region having a shape other than rectangular, e.g. rounded or oblique shape

Landscapes

  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Drying Of Semiconductors (AREA)
  • Element Separation (AREA)
  • Local Oxidation Of Silicon (AREA)
  • Bipolar Transistors (AREA)
JP56084452A 1981-06-03 1981-06-03 Manufacture of semiconductor device Granted JPS57199232A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP56084452A JPS57199232A (en) 1981-06-03 1981-06-03 Manufacture of semiconductor device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP56084452A JPS57199232A (en) 1981-06-03 1981-06-03 Manufacture of semiconductor device

Publications (2)

Publication Number Publication Date
JPS57199232A true JPS57199232A (en) 1982-12-07
JPH0249018B2 JPH0249018B2 (enrdf_load_html_response) 1990-10-26

Family

ID=13831005

Family Applications (1)

Application Number Title Priority Date Filing Date
JP56084452A Granted JPS57199232A (en) 1981-06-03 1981-06-03 Manufacture of semiconductor device

Country Status (1)

Country Link
JP (1) JPS57199232A (enrdf_load_html_response)

Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS50137086A (enrdf_load_html_response) * 1974-04-17 1975-10-30
JPS5232671A (en) * 1975-09-08 1977-03-12 Fujitsu Ltd Manufacturing process of semiconductor device
JPS5444478A (en) * 1977-09-14 1979-04-07 Matsushita Electric Ind Co Ltd Manufacture for semiconductor device
JPS5617020A (en) * 1979-07-20 1981-02-18 Toshiba Corp Judgement of etching end point

Patent Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS50137086A (enrdf_load_html_response) * 1974-04-17 1975-10-30
JPS5232671A (en) * 1975-09-08 1977-03-12 Fujitsu Ltd Manufacturing process of semiconductor device
JPS5444478A (en) * 1977-09-14 1979-04-07 Matsushita Electric Ind Co Ltd Manufacture for semiconductor device
JPS5617020A (en) * 1979-07-20 1981-02-18 Toshiba Corp Judgement of etching end point

Also Published As

Publication number Publication date
JPH0249018B2 (enrdf_load_html_response) 1990-10-26

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