JPS589371A - トランジスタ - Google Patents

トランジスタ

Info

Publication number
JPS589371A
JPS589371A JP57110561A JP11056182A JPS589371A JP S589371 A JPS589371 A JP S589371A JP 57110561 A JP57110561 A JP 57110561A JP 11056182 A JP11056182 A JP 11056182A JP S589371 A JPS589371 A JP S589371A
Authority
JP
Japan
Prior art keywords
layer
heterojunction
type
transistor
base
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP57110561A
Other languages
English (en)
Japanese (ja)
Inventor
トロン・リン・ニユエン
パトリツク・エテイエンヌ
ダニエル・デラジユボ−デユ
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Thales SA
Original Assignee
Thomson CSF SA
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Thomson CSF SA filed Critical Thomson CSF SA
Publication of JPS589371A publication Critical patent/JPS589371A/ja
Pending legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D48/00—Individual devices not covered by groups H10D1/00 - H10D44/00
    • H10D48/30—Devices controlled by electric currents or voltages
    • H10D48/32—Devices controlled by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H10D48/36—Unipolar devices
    • H10D48/362—Unipolar transistors having ohmic electrodes on emitter-like, base-like, and collector-like regions, e.g. hot electron transistors [HET], metal base transistors [MBT], resonant tunnelling transistors [RTT], bulk barrier transistors [BBT], planar doped barrier transistors [PDBT] or charge injection transistors [CHINT]

Landscapes

  • Bipolar Transistors (AREA)
JP57110561A 1981-06-26 1982-06-26 トランジスタ Pending JPS589371A (ja)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
FR8112613A FR2508707A1 (fr) 1981-06-26 1981-06-26 Transistor balistique a multiples heterojonctions
FR8112613 1981-06-26

Publications (1)

Publication Number Publication Date
JPS589371A true JPS589371A (ja) 1983-01-19

Family

ID=9259917

Family Applications (1)

Application Number Title Priority Date Filing Date
JP57110561A Pending JPS589371A (ja) 1981-06-26 1982-06-26 トランジスタ

Country Status (3)

Country Link
EP (1) EP0070211A1 (OSRAM)
JP (1) JPS589371A (OSRAM)
FR (1) FR2508707A1 (OSRAM)

Cited By (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS60187057A (ja) * 1984-03-06 1985-09-24 Fujitsu Ltd 半導体装置
JPS61121359A (ja) * 1984-11-19 1986-06-09 Fujitsu Ltd 高速半導体装置の製造方法
JPS61158172A (ja) * 1984-12-29 1986-07-17 Fujitsu Ltd 高速半導体装置
JPS61226961A (ja) * 1985-04-01 1986-10-08 Fujitsu Ltd 高速半導体装置
JPS624366A (ja) * 1985-07-01 1987-01-10 Fujitsu Ltd ホツトエレクトロントランジスタ
JPS624365A (ja) * 1985-07-01 1987-01-10 Fujitsu Ltd 半導体装置
JPS63310167A (ja) * 1987-06-12 1988-12-19 Agency Of Ind Science & Technol 半導体装置
JPH062184U (ja) * 1992-06-19 1994-01-14 三菱マテリアル株式会社 サーミスタセンサ
US5334429A (en) * 1991-06-24 1994-08-02 Ashimori Industry Co., Ltd. Lining material for pipe lines and a process for providing pipe lines therewith

Families Citing this family (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS6158268A (ja) * 1984-08-30 1986-03-25 Fujitsu Ltd 高速半導体装置
JPS62211948A (ja) * 1986-03-13 1987-09-17 Fujitsu Ltd ヘテロ接合半導体装置
US4958208A (en) * 1987-08-12 1990-09-18 Nec Corporation Bipolar transistor with abrupt potential discontinuity in collector region
US5045296A (en) * 1989-10-30 1991-09-03 Fmc Corporation Sodium carbonate perhydrate process
US5442194A (en) * 1994-01-07 1995-08-15 Texas Instruments Incorporated Room-temperature tunneling hot-electron transistor
WO2005109519A1 (en) * 2004-05-01 2005-11-17 Cristopher Croft Jones Charge carrier flow apparatus and methods
KR101235760B1 (ko) * 2010-12-27 2013-02-28 재단법인 포항산업과학연구원 스틸 커튼월 장착구조

Family Cites Families (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4173763A (en) * 1977-06-09 1979-11-06 International Business Machines Corporation Heterojunction tunneling base transistor
US4286275A (en) * 1980-02-04 1981-08-25 International Business Machines Corporation Semiconductor device

Cited By (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS60187057A (ja) * 1984-03-06 1985-09-24 Fujitsu Ltd 半導体装置
JPS61121359A (ja) * 1984-11-19 1986-06-09 Fujitsu Ltd 高速半導体装置の製造方法
JPS61158172A (ja) * 1984-12-29 1986-07-17 Fujitsu Ltd 高速半導体装置
JPS61226961A (ja) * 1985-04-01 1986-10-08 Fujitsu Ltd 高速半導体装置
JPS624366A (ja) * 1985-07-01 1987-01-10 Fujitsu Ltd ホツトエレクトロントランジスタ
JPS624365A (ja) * 1985-07-01 1987-01-10 Fujitsu Ltd 半導体装置
JPS63310167A (ja) * 1987-06-12 1988-12-19 Agency Of Ind Science & Technol 半導体装置
US5334429A (en) * 1991-06-24 1994-08-02 Ashimori Industry Co., Ltd. Lining material for pipe lines and a process for providing pipe lines therewith
US5503695A (en) * 1991-06-24 1996-04-02 Ashimori Industry Co., Ltd. Lining material for pipe lines and a process for providing pipe lines therewith
JPH062184U (ja) * 1992-06-19 1994-01-14 三菱マテリアル株式会社 サーミスタセンサ

Also Published As

Publication number Publication date
FR2508707B1 (OSRAM) 1984-10-12
FR2508707A1 (fr) 1982-12-31
EP0070211A1 (fr) 1983-01-19

Similar Documents

Publication Publication Date Title
US4484207A (en) Static induction transistor and semiconductor integrated circuit using hetero-junction
US4173763A (en) Heterojunction tunneling base transistor
US4380774A (en) High-performance bipolar microwave transistor
JPS589371A (ja) トランジスタ
US4758868A (en) Ballistic hetero-junction transistor with transverse two dimensional electron gas layer
US5442194A (en) Room-temperature tunneling hot-electron transistor
JPS589366A (ja) トランジスタ
US4958208A (en) Bipolar transistor with abrupt potential discontinuity in collector region
JP2571208B2 (ja) 低温トンネル・トランジスタ
US4878095A (en) Semiconductor device in particular a hot electron transistor
WO1986004184A1 (en) Hot electron unipolar transistor
JPS63140570A (ja) 半導体装置
US3225272A (en) Semiconductor triode
GB2163002A (en) Tunnel injection static induction transistor and its integrated circuit
US3358158A (en) Semiconductor devices
WO1987000692A1 (en) Semiconductor device
JPH03222478A (ja) 半導体装置
US3087100A (en) Ohmic contacts to semiconductor devices
KR100752538B1 (ko) 바이폴라 트랜지스터
JPH01171269A (ja) 半導体装置
US3220894A (en) Diffused-base transistors, preferably for high-frequency operation
JPS627159A (ja) 半導体装置
JP2587722B2 (ja) トンネル注入型静電誘導トランジスタ
JPH0131314B2 (OSRAM)
JP2559842B2 (ja) 半導体装置およびこれを用いた光電変換装置