FR2508707A1 - Transistor balistique a multiples heterojonctions - Google Patents

Transistor balistique a multiples heterojonctions Download PDF

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Publication number
FR2508707A1
FR2508707A1 FR8112613A FR8112613A FR2508707A1 FR 2508707 A1 FR2508707 A1 FR 2508707A1 FR 8112613 A FR8112613 A FR 8112613A FR 8112613 A FR8112613 A FR 8112613A FR 2508707 A1 FR2508707 A1 FR 2508707A1
Authority
FR
France
Prior art keywords
layer
layers
base
contact
transistor according
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
FR8112613A
Other languages
English (en)
French (fr)
Other versions
FR2508707B1 (OSRAM
Inventor
Trong Linh Nuyen
Daniel Delagebeaudeuf
Patrick Etienne
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Thales SA
Original Assignee
Thomson CSF SA
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Thomson CSF SA filed Critical Thomson CSF SA
Priority to FR8112613A priority Critical patent/FR2508707A1/fr
Priority to EP82401122A priority patent/EP0070211A1/fr
Priority to JP57110561A priority patent/JPS589371A/ja
Publication of FR2508707A1 publication Critical patent/FR2508707A1/fr
Application granted granted Critical
Publication of FR2508707B1 publication Critical patent/FR2508707B1/fr
Granted legal-status Critical Current

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Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D48/00—Individual devices not covered by groups H10D1/00 - H10D44/00
    • H10D48/30—Devices controlled by electric currents or voltages
    • H10D48/32—Devices controlled by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H10D48/36—Unipolar devices
    • H10D48/362—Unipolar transistors having ohmic electrodes on emitter-like, base-like, and collector-like regions, e.g. hot electron transistors [HET], metal base transistors [MBT], resonant tunnelling transistors [RTT], bulk barrier transistors [BBT], planar doped barrier transistors [PDBT] or charge injection transistors [CHINT]

Landscapes

  • Bipolar Transistors (AREA)
FR8112613A 1981-06-26 1981-06-26 Transistor balistique a multiples heterojonctions Granted FR2508707A1 (fr)

Priority Applications (3)

Application Number Priority Date Filing Date Title
FR8112613A FR2508707A1 (fr) 1981-06-26 1981-06-26 Transistor balistique a multiples heterojonctions
EP82401122A EP0070211A1 (fr) 1981-06-26 1982-06-18 Transistor balistique à multiples hétérojonctions
JP57110561A JPS589371A (ja) 1981-06-26 1982-06-26 トランジスタ

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
FR8112613A FR2508707A1 (fr) 1981-06-26 1981-06-26 Transistor balistique a multiples heterojonctions

Publications (2)

Publication Number Publication Date
FR2508707A1 true FR2508707A1 (fr) 1982-12-31
FR2508707B1 FR2508707B1 (OSRAM) 1984-10-12

Family

ID=9259917

Family Applications (1)

Application Number Title Priority Date Filing Date
FR8112613A Granted FR2508707A1 (fr) 1981-06-26 1981-06-26 Transistor balistique a multiples heterojonctions

Country Status (3)

Country Link
EP (1) EP0070211A1 (OSRAM)
JP (1) JPS589371A (OSRAM)
FR (1) FR2508707A1 (OSRAM)

Families Citing this family (16)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS61121359A (ja) * 1984-11-19 1986-06-09 Fujitsu Ltd 高速半導体装置の製造方法
JPH0680675B2 (ja) * 1984-03-06 1994-10-12 富士通株式会社 半導体装置の製造方法
JPS6158268A (ja) * 1984-08-30 1986-03-25 Fujitsu Ltd 高速半導体装置
JPS61158172A (ja) * 1984-12-29 1986-07-17 Fujitsu Ltd 高速半導体装置
JPS61226961A (ja) * 1985-04-01 1986-10-08 Fujitsu Ltd 高速半導体装置
JPS624366A (ja) * 1985-07-01 1987-01-10 Fujitsu Ltd ホツトエレクトロントランジスタ
JPS624365A (ja) * 1985-07-01 1987-01-10 Fujitsu Ltd 半導体装置
JPS62211948A (ja) * 1986-03-13 1987-09-17 Fujitsu Ltd ヘテロ接合半導体装置
JPS63310167A (ja) * 1987-06-12 1988-12-19 Agency Of Ind Science & Technol 半導体装置
US4958208A (en) * 1987-08-12 1990-09-18 Nec Corporation Bipolar transistor with abrupt potential discontinuity in collector region
US5045296A (en) * 1989-10-30 1991-09-03 Fmc Corporation Sodium carbonate perhydrate process
CA2072173C (en) * 1991-06-24 2002-06-04 Takayoshi Imoto Lining material for pipe lines and a process for providing pipe lines therewith
JP2558383Y2 (ja) * 1992-06-19 1997-12-24 三菱マテリアル株式会社 サーミスタセンサ
US5442194A (en) * 1994-01-07 1995-08-15 Texas Instruments Incorporated Room-temperature tunneling hot-electron transistor
WO2005109519A1 (en) * 2004-05-01 2005-11-17 Cristopher Croft Jones Charge carrier flow apparatus and methods
KR101235760B1 (ko) * 2010-12-27 2013-02-28 재단법인 포항산업과학연구원 스틸 커튼월 장착구조

Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
FR2394174A1 (fr) * 1977-06-09 1979-01-05 Ibm Dispositif a semi-conducteur du type transistor a heterojonctions a grande vitesse
EP0033876A2 (en) * 1980-02-04 1981-08-19 International Business Machines Corporation Three-terminal semiconductor device

Patent Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
FR2394174A1 (fr) * 1977-06-09 1979-01-05 Ibm Dispositif a semi-conducteur du type transistor a heterojonctions a grande vitesse
EP0033876A2 (en) * 1980-02-04 1981-08-19 International Business Machines Corporation Three-terminal semiconductor device

Also Published As

Publication number Publication date
FR2508707B1 (OSRAM) 1984-10-12
JPS589371A (ja) 1983-01-19
EP0070211A1 (fr) 1983-01-19

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