JPS5892268A - 半導体装置の製造方法 - Google Patents

半導体装置の製造方法

Info

Publication number
JPS5892268A
JPS5892268A JP56191463A JP19146381A JPS5892268A JP S5892268 A JPS5892268 A JP S5892268A JP 56191463 A JP56191463 A JP 56191463A JP 19146381 A JP19146381 A JP 19146381A JP S5892268 A JPS5892268 A JP S5892268A
Authority
JP
Japan
Prior art keywords
oxide film
polycrystalline silicon
film
forming
manufacturing
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP56191463A
Other languages
English (en)
Japanese (ja)
Other versions
JPH0586672B2 (enrdf_load_stackoverflow
Inventor
Jun Fukuchi
福地　順
Ichizo Kamei
亀井　市蔵
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Panasonic Holdings Corp
Original Assignee
Matsushita Electronics Corp
Matsushita Electric Industrial Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Matsushita Electronics Corp, Matsushita Electric Industrial Co Ltd filed Critical Matsushita Electronics Corp
Priority to JP56191463A priority Critical patent/JPS5892268A/ja
Publication of JPS5892268A publication Critical patent/JPS5892268A/ja
Publication of JPH0586672B2 publication Critical patent/JPH0586672B2/ja
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]

Landscapes

  • Semiconductor Memories (AREA)
  • Non-Volatile Memory (AREA)
JP56191463A 1981-11-27 1981-11-27 半導体装置の製造方法 Granted JPS5892268A (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP56191463A JPS5892268A (ja) 1981-11-27 1981-11-27 半導体装置の製造方法

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP56191463A JPS5892268A (ja) 1981-11-27 1981-11-27 半導体装置の製造方法

Publications (2)

Publication Number Publication Date
JPS5892268A true JPS5892268A (ja) 1983-06-01
JPH0586672B2 JPH0586672B2 (enrdf_load_stackoverflow) 1993-12-13

Family

ID=16275060

Family Applications (1)

Application Number Title Priority Date Filing Date
JP56191463A Granted JPS5892268A (ja) 1981-11-27 1981-11-27 半導体装置の製造方法

Country Status (1)

Country Link
JP (1) JPS5892268A (enrdf_load_stackoverflow)

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS62229759A (ja) * 1986-03-21 1987-10-08 エヌ・ベ−・フイリツプス・フル−イランペンフアブリケン アルカリ金属の負極を有する１つまたはそれ以上の電気化学セルを有する電池
US4888298A (en) * 1988-12-23 1989-12-19 Eastman Kodak Company Process to eliminate the re-entrant profile in a double polysilicon gate structure
US5686333A (en) * 1994-07-08 1997-11-11 Nippon Steel Corporation Nonvolatile semiconductor memory device and method of producing the same
US5830771A (en) * 1994-09-09 1998-11-03 Nippondenso Co., Ltd. Manufacturing method for semiconductor device

Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS56111247A (en) * 1980-01-24 1981-09-02 Chiyou Lsi Gijutsu Kenkyu Kumiai Preparation of semiconductor device

Patent Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS56111247A (en) * 1980-01-24 1981-09-02 Chiyou Lsi Gijutsu Kenkyu Kumiai Preparation of semiconductor device

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS62229759A (ja) * 1986-03-21 1987-10-08 エヌ・ベ−・フイリツプス・フル−イランペンフアブリケン アルカリ金属の負極を有する１つまたはそれ以上の電気化学セルを有する電池
US4888298A (en) * 1988-12-23 1989-12-19 Eastman Kodak Company Process to eliminate the re-entrant profile in a double polysilicon gate structure
US5686333A (en) * 1994-07-08 1997-11-11 Nippon Steel Corporation Nonvolatile semiconductor memory device and method of producing the same
US5830771A (en) * 1994-09-09 1998-11-03 Nippondenso Co., Ltd. Manufacturing method for semiconductor device

Also Published As

Publication number Publication date
JPH0586672B2 (enrdf_load_stackoverflow) 1993-12-13

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