JPS6216013B2 - - Google Patents

Info

Publication number
JPS6216013B2
JPS6216013B2 JP60093604A JP9360485A JPS6216013B2 JP S6216013 B2 JPS6216013 B2 JP S6216013B2 JP 60093604 A JP60093604 A JP 60093604A JP 9360485 A JP9360485 A JP 9360485A JP S6216013 B2 JPS6216013 B2 JP S6216013B2
Authority
JP
Japan
Prior art keywords
film
insulating film
silicon
substrate
electrode
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
JP60093604A
Other languages
English (en)
Japanese (ja)
Other versions
JPS6110255A (ja
Inventor
Toshiaki Masuhara
Hideo Sunami
Yoshiaki Kamigaki
Tetsukazu Hashimoto
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Hitachi Ltd
Original Assignee
Hitachi Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Hitachi Ltd filed Critical Hitachi Ltd
Priority to JP9360485A priority Critical patent/JPS6110255A/ja
Publication of JPS6110255A publication Critical patent/JPS6110255A/ja
Publication of JPS6216013B2 publication Critical patent/JPS6216013B2/ja
Granted legal-status Critical Current

Links

Landscapes

  • Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
JP9360485A 1985-05-02 1985-05-02 半導体装置の製造方法 Granted JPS6110255A (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP9360485A JPS6110255A (ja) 1985-05-02 1985-05-02 半導体装置の製造方法

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP9360485A JPS6110255A (ja) 1985-05-02 1985-05-02 半導体装置の製造方法

Related Parent Applications (1)

Application Number Title Priority Date Filing Date
JP11471976A Division JPS5340291A (en) 1976-09-27 1976-09-27 Manufacture of semiconductor device

Publications (2)

Publication Number Publication Date
JPS6110255A JPS6110255A (ja) 1986-01-17
JPS6216013B2 true JPS6216013B2 (enrdf_load_stackoverflow) 1987-04-10

Family

ID=14086929

Family Applications (1)

Application Number Title Priority Date Filing Date
JP9360485A Granted JPS6110255A (ja) 1985-05-02 1985-05-02 半導体装置の製造方法

Country Status (1)

Country Link
JP (1) JPS6110255A (enrdf_load_stackoverflow)

Family Cites Families (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS4932635A (enrdf_load_stackoverflow) * 1972-07-21 1974-03-25
JPS5019363A (enrdf_load_stackoverflow) * 1973-06-21 1975-02-28

Also Published As

Publication number Publication date
JPS6110255A (ja) 1986-01-17

Similar Documents

Publication Publication Date Title
JPH0736437B2 (ja) 半導体メモリの製造方法
JPH0640582B2 (ja) 絶縁ゲ−ト電界効果トランジスタの製造方法
JPH0326547B2 (enrdf_load_stackoverflow)
JPH0638496B2 (ja) 半導体装置
KR970009054B1 (ko) 평면구조 모스 트랜지스터 및 그 제조방법
JPS6228591B2 (enrdf_load_stackoverflow)
JPS6216013B2 (enrdf_load_stackoverflow)
JPS6118340B2 (enrdf_load_stackoverflow)
JPH0918003A (ja) 電界効果トランジスタの製造方法
JPH03227024A (ja) 半導体装置の製造方法
JPS5892268A (ja) 半導体装置の製造方法
JPS605074B2 (ja) 半導体装置の製造方法
JPH04286152A (ja) 半導体メモリの製造方法
JPH0329186B2 (enrdf_load_stackoverflow)
JPH0794721A (ja) 半導体装置及びその製造方法
JPH11145425A (ja) 半導体素子の製造方法及び半導体装置
JPH0142147B2 (enrdf_load_stackoverflow)
JP2661778B2 (ja) 電気的消去可能不揮発性半導体記憶装置およびその製造方法
JPS647511B2 (enrdf_load_stackoverflow)
JPH01260857A (ja) 半導体素子およびその製造方法
KR930008074B1 (ko) 메모리 셀 제조방법
KR0166839B1 (ko) 반도체 메모리소자의 제조방법
JP2972270B2 (ja) 半導体装置の製造方法
JPS63117470A (ja) モス型半導体装置およびその製造方法
JPS6336143B2 (enrdf_load_stackoverflow)