JPS6228591B2 - - Google Patents
Info
- Publication number
- JPS6228591B2 JPS6228591B2 JP5982880A JP5982880A JPS6228591B2 JP S6228591 B2 JPS6228591 B2 JP S6228591B2 JP 5982880 A JP5982880 A JP 5982880A JP 5982880 A JP5982880 A JP 5982880A JP S6228591 B2 JPS6228591 B2 JP S6228591B2
- Authority
- JP
- Japan
- Prior art keywords
- oxide film
- temperature
- gate electrode
- low
- polycrystalline silicon
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/28—Manufacture of electrodes on semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/268
Landscapes
- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Electrodes Of Semiconductors (AREA)
- Formation Of Insulating Films (AREA)
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP5982880A JPS56157024A (en) | 1980-05-06 | 1980-05-06 | Manufacture of semiconductor device |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP5982880A JPS56157024A (en) | 1980-05-06 | 1980-05-06 | Manufacture of semiconductor device |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS56157024A JPS56157024A (en) | 1981-12-04 |
| JPS6228591B2 true JPS6228591B2 (enrdf_load_stackoverflow) | 1987-06-22 |
Family
ID=13124470
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP5982880A Granted JPS56157024A (en) | 1980-05-06 | 1980-05-06 | Manufacture of semiconductor device |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS56157024A (enrdf_load_stackoverflow) |
Families Citing this family (7)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH0652733B2 (ja) * | 1985-06-04 | 1994-07-06 | 日本電気株式会社 | 半導体装置の製造法 |
| US5028554A (en) * | 1986-07-03 | 1991-07-02 | Oki Electric Industry Co., Ltd. | Process of fabricating an MIS FET |
| US4855247A (en) * | 1988-01-19 | 1989-08-08 | Standard Microsystems Corporation | Process for fabricating self-aligned silicide lightly doped drain MOS devices |
| DE69132695T2 (de) * | 1990-05-11 | 2002-06-13 | Koninklijke Philips Electronics N.V., Eindhoven | CMOS-Verfahren mit Verwendung von zeitweilig angebrachten Siliciumnitrid-Spacern zum Herstellen von Transistoren (LDD) mit leicht dotiertem Drain |
| US5089432A (en) * | 1990-08-17 | 1992-02-18 | Taiwan Semiconductor Manufacturing Company | Polycide gate MOSFET process for integrated circuits |
| AU2003201110A1 (en) * | 2002-02-01 | 2003-09-02 | Koninklijke Philips Electronics N.V. | Method for forming high quality oxide layers of different thickness in one processing step |
| CN102299064B (zh) * | 2010-06-28 | 2013-03-27 | 中芯国际集成电路制造(上海)有限公司 | 栅结构氧化的方法 |
-
1980
- 1980-05-06 JP JP5982880A patent/JPS56157024A/ja active Granted
Also Published As
| Publication number | Publication date |
|---|---|
| JPS56157024A (en) | 1981-12-04 |
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