JPS56157024A - Manufacture of semiconductor device - Google Patents
Manufacture of semiconductor deviceInfo
- Publication number
- JPS56157024A JPS56157024A JP5982880A JP5982880A JPS56157024A JP S56157024 A JPS56157024 A JP S56157024A JP 5982880 A JP5982880 A JP 5982880A JP 5982880 A JP5982880 A JP 5982880A JP S56157024 A JPS56157024 A JP S56157024A
- Authority
- JP
- Japan
- Prior art keywords
- oxidation
- temperature
- oxide film
- low temperature
- electrode
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 239000004065 semiconductor Substances 0.000 title abstract 2
- 238000004519 manufacturing process Methods 0.000 title 1
- 230000003647 oxidation Effects 0.000 abstract 4
- 238000007254 oxidation reaction Methods 0.000 abstract 4
- 230000010354 integration Effects 0.000 abstract 2
- 239000002184 metal Substances 0.000 abstract 2
- 238000000034 method Methods 0.000 abstract 2
- 229910021420 polycrystalline silicon Inorganic materials 0.000 abstract 2
- 229910021332 silicide Inorganic materials 0.000 abstract 2
- FVBUAEGBCNSCDD-UHFFFAOYSA-N silicide(4-) Chemical compound [Si-4] FVBUAEGBCNSCDD-UHFFFAOYSA-N 0.000 abstract 2
- 239000000758 substrate Substances 0.000 abstract 2
- 230000008878 coupling Effects 0.000 abstract 1
- 238000010168 coupling process Methods 0.000 abstract 1
- 238000005859 coupling reaction Methods 0.000 abstract 1
- 238000009792 diffusion process Methods 0.000 abstract 1
- 239000012535 impurity Substances 0.000 abstract 1
- 238000009279 wet oxidation reaction Methods 0.000 abstract 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/28—Manufacture of electrodes on semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/268
Landscapes
- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Formation Of Insulating Films (AREA)
- Electrodes Of Semiconductors (AREA)
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP5982880A JPS56157024A (en) | 1980-05-06 | 1980-05-06 | Manufacture of semiconductor device |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP5982880A JPS56157024A (en) | 1980-05-06 | 1980-05-06 | Manufacture of semiconductor device |
Publications (2)
Publication Number | Publication Date |
---|---|
JPS56157024A true JPS56157024A (en) | 1981-12-04 |
JPS6228591B2 JPS6228591B2 (ja) | 1987-06-22 |
Family
ID=13124470
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP5982880A Granted JPS56157024A (en) | 1980-05-06 | 1980-05-06 | Manufacture of semiconductor device |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPS56157024A (ja) |
Cited By (7)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS61279134A (ja) * | 1985-06-04 | 1986-12-09 | Nec Corp | 半導体装置の製造法 |
US4855247A (en) * | 1988-01-19 | 1989-08-08 | Standard Microsystems Corporation | Process for fabricating self-aligned silicide lightly doped drain MOS devices |
US5028554A (en) * | 1986-07-03 | 1991-07-02 | Oki Electric Industry Co., Ltd. | Process of fabricating an MIS FET |
US5089432A (en) * | 1990-08-17 | 1992-02-18 | Taiwan Semiconductor Manufacturing Company | Polycide gate MOSFET process for integrated circuits |
US5766991A (en) * | 1990-05-11 | 1998-06-16 | U.S. Philips Corporation | CMOS process utilizing disposable silicon nitride spacers for making lightly doped drain |
WO2003065437A3 (en) * | 2002-02-01 | 2003-11-13 | Koninkl Philips Electronics Nv | Method for forming high quality oxide layers of different thickness in one processing step |
CN102299064A (zh) * | 2010-06-28 | 2011-12-28 | 中芯国际集成电路制造(上海)有限公司 | 栅结构氧化的方法 |
-
1980
- 1980-05-06 JP JP5982880A patent/JPS56157024A/ja active Granted
Cited By (8)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS61279134A (ja) * | 1985-06-04 | 1986-12-09 | Nec Corp | 半導体装置の製造法 |
US5028554A (en) * | 1986-07-03 | 1991-07-02 | Oki Electric Industry Co., Ltd. | Process of fabricating an MIS FET |
US4855247A (en) * | 1988-01-19 | 1989-08-08 | Standard Microsystems Corporation | Process for fabricating self-aligned silicide lightly doped drain MOS devices |
US5766991A (en) * | 1990-05-11 | 1998-06-16 | U.S. Philips Corporation | CMOS process utilizing disposable silicon nitride spacers for making lightly doped drain |
US5089432A (en) * | 1990-08-17 | 1992-02-18 | Taiwan Semiconductor Manufacturing Company | Polycide gate MOSFET process for integrated circuits |
WO2003065437A3 (en) * | 2002-02-01 | 2003-11-13 | Koninkl Philips Electronics Nv | Method for forming high quality oxide layers of different thickness in one processing step |
CN100347833C (zh) * | 2002-02-01 | 2007-11-07 | Nxp股份有限公司 | 在一个加工步骤中形成不同厚度的高质量氧化物层的方法 |
CN102299064A (zh) * | 2010-06-28 | 2011-12-28 | 中芯国际集成电路制造(上海)有限公司 | 栅结构氧化的方法 |
Also Published As
Publication number | Publication date |
---|---|
JPS6228591B2 (ja) | 1987-06-22 |
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