JPS56157024A - Manufacture of semiconductor device - Google Patents
Manufacture of semiconductor deviceInfo
- Publication number
- JPS56157024A JPS56157024A JP5982880A JP5982880A JPS56157024A JP S56157024 A JPS56157024 A JP S56157024A JP 5982880 A JP5982880 A JP 5982880A JP 5982880 A JP5982880 A JP 5982880A JP S56157024 A JPS56157024 A JP S56157024A
- Authority
- JP
- Japan
- Prior art keywords
- oxidation
- temperature
- oxide film
- low temperature
- electrode
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/28—Manufacture of electrodes on semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/268
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP5982880A JPS56157024A (en) | 1980-05-06 | 1980-05-06 | Manufacture of semiconductor device |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP5982880A JPS56157024A (en) | 1980-05-06 | 1980-05-06 | Manufacture of semiconductor device |
Publications (2)
Publication Number | Publication Date |
---|---|
JPS56157024A true JPS56157024A (en) | 1981-12-04 |
JPS6228591B2 JPS6228591B2 (ja) | 1987-06-22 |
Family
ID=13124470
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP5982880A Granted JPS56157024A (en) | 1980-05-06 | 1980-05-06 | Manufacture of semiconductor device |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPS56157024A (ja) |
Cited By (7)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS61279134A (ja) * | 1985-06-04 | 1986-12-09 | Nec Corp | 半導体装置の製造法 |
US4855247A (en) * | 1988-01-19 | 1989-08-08 | Standard Microsystems Corporation | Process for fabricating self-aligned silicide lightly doped drain MOS devices |
US5028554A (en) * | 1986-07-03 | 1991-07-02 | Oki Electric Industry Co., Ltd. | Process of fabricating an MIS FET |
US5089432A (en) * | 1990-08-17 | 1992-02-18 | Taiwan Semiconductor Manufacturing Company | Polycide gate MOSFET process for integrated circuits |
US5766991A (en) * | 1990-05-11 | 1998-06-16 | U.S. Philips Corporation | CMOS process utilizing disposable silicon nitride spacers for making lightly doped drain |
WO2003065437A3 (en) * | 2002-02-01 | 2003-11-13 | Koninkl Philips Electronics Nv | Method for forming high quality oxide layers of different thickness in one processing step |
CN102299064A (zh) * | 2010-06-28 | 2011-12-28 | 中芯国际集成电路制造(上海)有限公司 | 栅结构氧化的方法 |
-
1980
- 1980-05-06 JP JP5982880A patent/JPS56157024A/ja active Granted
Cited By (8)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS61279134A (ja) * | 1985-06-04 | 1986-12-09 | Nec Corp | 半導体装置の製造法 |
US5028554A (en) * | 1986-07-03 | 1991-07-02 | Oki Electric Industry Co., Ltd. | Process of fabricating an MIS FET |
US4855247A (en) * | 1988-01-19 | 1989-08-08 | Standard Microsystems Corporation | Process for fabricating self-aligned silicide lightly doped drain MOS devices |
US5766991A (en) * | 1990-05-11 | 1998-06-16 | U.S. Philips Corporation | CMOS process utilizing disposable silicon nitride spacers for making lightly doped drain |
US5089432A (en) * | 1990-08-17 | 1992-02-18 | Taiwan Semiconductor Manufacturing Company | Polycide gate MOSFET process for integrated circuits |
WO2003065437A3 (en) * | 2002-02-01 | 2003-11-13 | Koninkl Philips Electronics Nv | Method for forming high quality oxide layers of different thickness in one processing step |
CN100347833C (zh) * | 2002-02-01 | 2007-11-07 | Nxp股份有限公司 | 在一个加工步骤中形成不同厚度的高质量氧化物层的方法 |
CN102299064A (zh) * | 2010-06-28 | 2011-12-28 | 中芯国际集成电路制造(上海)有限公司 | 栅结构氧化的方法 |
Also Published As
Publication number | Publication date |
---|---|
JPS6228591B2 (ja) | 1987-06-22 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
JPS55160457A (en) | Semiconductor device | |
JPS5696854A (en) | Semiconductor memory device | |
JPS56157024A (en) | Manufacture of semiconductor device | |
JPS5562771A (en) | Integrated circuit device | |
JPS57155777A (en) | Mos transistor | |
JPS54156483A (en) | Non-volatile semiconductor memory device | |
JPS57167669A (en) | Capacitor and manufacture thereof | |
JPS5521102A (en) | Semiconductor memory cell | |
JPS54114984A (en) | Semiconductor device | |
JPS5475273A (en) | Manufacture of semiconductor device | |
JPS5546502A (en) | Nonvolatile semiconductor memory | |
JPS57114274A (en) | Electrode for semiconductor device and manufacture thereof | |
JPS56130970A (en) | Manufacture of semiconductor device | |
JPS5630768A (en) | Manufacture of mnos type semiconductor device | |
JPS54107269A (en) | Non-volatile semiconductor memory and its production | |
JPS566464A (en) | Semiconductor device and manufacture thereof | |
JPS57111059A (en) | Memory cell and manufacture thereof | |
JPS5645066A (en) | Semiconductor device and manufacture therefor | |
JPS5681969A (en) | Manufacture of semiconductor device | |
JPS577968A (en) | Semiconductor device | |
JPS5710265A (en) | Field effect transistor | |
JPS5346287A (en) | Production of semiconductor integrated circuit | |
JPS56152265A (en) | Manufacture of semiconductor device | |
JPS56105675A (en) | Manufacture of semiconductor device | |
JPS5323574A (en) | Forming method of silicon oxide film |