JPS5546502A - Nonvolatile semiconductor memory - Google Patents
Nonvolatile semiconductor memoryInfo
- Publication number
- JPS5546502A JPS5546502A JP11858478A JP11858478A JPS5546502A JP S5546502 A JPS5546502 A JP S5546502A JP 11858478 A JP11858478 A JP 11858478A JP 11858478 A JP11858478 A JP 11858478A JP S5546502 A JPS5546502 A JP S5546502A
- Authority
- JP
- Japan
- Prior art keywords
- film
- produced
- thermally oxidized
- gate
- floating gate
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 239000004065 semiconductor Substances 0.000 title abstract 2
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 abstract 2
- 230000010354 integration Effects 0.000 abstract 2
- 230000003647 oxidation Effects 0.000 abstract 2
- 238000007254 oxidation reaction Methods 0.000 abstract 2
- 229910021420 polycrystalline silicon Inorganic materials 0.000 abstract 2
- 229920005591 polysilicon Polymers 0.000 abstract 2
- 239000000758 substrate Substances 0.000 abstract 2
- 229910052681 coesite Inorganic materials 0.000 abstract 1
- 229910052906 cristobalite Inorganic materials 0.000 abstract 1
- 150000004767 nitrides Chemical class 0.000 abstract 1
- 239000000377 silicon dioxide Substances 0.000 abstract 1
- 235000012239 silicon dioxide Nutrition 0.000 abstract 1
- 229910052682 stishovite Inorganic materials 0.000 abstract 1
- 229910052905 tridymite Inorganic materials 0.000 abstract 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/76—Unipolar devices, e.g. field effect transistors
- H01L29/772—Field effect transistors
- H01L29/78—Field effect transistors with field effect produced by an insulated gate
- H01L29/788—Field effect transistors with field effect produced by an insulated gate with floating gate
- H01L29/7881—Programmable transistors with only two possible levels of programmation
Landscapes
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Physics & Mathematics (AREA)
- Ceramic Engineering (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Semiconductor Memories (AREA)
- Non-Volatile Memory (AREA)
Abstract
PURPOSE:To raise the degree of integration of a memory, by providing an electroconductive part which is located under an end of a floating gate and short-circuited to a control gate through an insulating film and by increasing the capacity ratio between both the gates and between the floating gate and a substrate. CONSTITUTION:The semiconductor substrate 1 is thermally oxidized so that a nitride film 3 is produced on an oxide film 2. A thermally oxidized film 4 is produced on the film 3 except for a diffused layer or a channel part. After the film 3 is removed, a CVD SiO2 film 12 or PSG film is produced by gas phase growth. The film 2 and other parts except for the film 12 are removed. Thermal oxidation is then performed so that a thermally oxidized film 5 is produced. A polysilicon layer is provided on the film 5. Parts except for a layer to be the floating gate 6 are removed. Thermal oxidation is thereafter effected so that the gate 6 is covered with a thermally oxidized film 7. The polysilicon layer 8 is then grown so that it extends to under the gate 6. The degree of integration of the memory is thus raised.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP11858478A JPS5546502A (en) | 1978-09-28 | 1978-09-28 | Nonvolatile semiconductor memory |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP11858478A JPS5546502A (en) | 1978-09-28 | 1978-09-28 | Nonvolatile semiconductor memory |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPS5546502A true JPS5546502A (en) | 1980-04-01 |
Family
ID=14740195
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP11858478A Pending JPS5546502A (en) | 1978-09-28 | 1978-09-28 | Nonvolatile semiconductor memory |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS5546502A (en) |
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS59154068A (en) * | 1983-02-22 | 1984-09-03 | Toshiba Corp | Semiconductor memory device and manufacture thereof |
| US5194925A (en) * | 1990-02-22 | 1993-03-16 | Mitsubishi Denki Kabushiki Kaisha | Electrically programmable non-volatie semiconductor memory device |
| US5621233A (en) * | 1994-09-16 | 1997-04-15 | Motorola Inc. | Electrically programmable read-only memory cell |
-
1978
- 1978-09-28 JP JP11858478A patent/JPS5546502A/en active Pending
Cited By (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS59154068A (en) * | 1983-02-22 | 1984-09-03 | Toshiba Corp | Semiconductor memory device and manufacture thereof |
| US5194925A (en) * | 1990-02-22 | 1993-03-16 | Mitsubishi Denki Kabushiki Kaisha | Electrically programmable non-volatie semiconductor memory device |
| US5378643A (en) * | 1990-02-22 | 1995-01-03 | Mitsubishi Denki Kabushiki Kaisha | Electrically programmable non-volatile semiconductor memory device and manufacturing method thereof |
| US5621233A (en) * | 1994-09-16 | 1997-04-15 | Motorola Inc. | Electrically programmable read-only memory cell |
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