JPS5546502A - Nonvolatile semiconductor memory - Google Patents

Nonvolatile semiconductor memory

Info

Publication number
JPS5546502A
JPS5546502A JP11858478A JP11858478A JPS5546502A JP S5546502 A JPS5546502 A JP S5546502A JP 11858478 A JP11858478 A JP 11858478A JP 11858478 A JP11858478 A JP 11858478A JP S5546502 A JPS5546502 A JP S5546502A
Authority
JP
Japan
Prior art keywords
film
produced
thermally oxidized
gate
floating gate
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP11858478A
Other languages
Japanese (ja)
Inventor
Hiroshi Nozawa
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Toshiba Corp
Original Assignee
Toshiba Corp
Tokyo Shibaura Electric Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Toshiba Corp, Tokyo Shibaura Electric Co Ltd filed Critical Toshiba Corp
Priority to JP11858478A priority Critical patent/JPS5546502A/en
Publication of JPS5546502A publication Critical patent/JPS5546502A/en
Pending legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof  ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/76—Unipolar devices, e.g. field effect transistors
    • H01L29/772—Field effect transistors
    • H01L29/78—Field effect transistors with field effect produced by an insulated gate
    • H01L29/788—Field effect transistors with field effect produced by an insulated gate with floating gate
    • H01L29/7881—Programmable transistors with only two possible levels of programmation

Abstract

PURPOSE:To raise the degree of integration of a memory, by providing an electroconductive part which is located under an end of a floating gate and short-circuited to a control gate through an insulating film and by increasing the capacity ratio between both the gates and between the floating gate and a substrate. CONSTITUTION:The semiconductor substrate 1 is thermally oxidized so that a nitride film 3 is produced on an oxide film 2. A thermally oxidized film 4 is produced on the film 3 except for a diffused layer or a channel part. After the film 3 is removed, a CVD SiO2 film 12 or PSG film is produced by gas phase growth. The film 2 and other parts except for the film 12 are removed. Thermal oxidation is then performed so that a thermally oxidized film 5 is produced. A polysilicon layer is provided on the film 5. Parts except for a layer to be the floating gate 6 are removed. Thermal oxidation is thereafter effected so that the gate 6 is covered with a thermally oxidized film 7. The polysilicon layer 8 is then grown so that it extends to under the gate 6. The degree of integration of the memory is thus raised.
JP11858478A 1978-09-28 1978-09-28 Nonvolatile semiconductor memory Pending JPS5546502A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP11858478A JPS5546502A (en) 1978-09-28 1978-09-28 Nonvolatile semiconductor memory

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP11858478A JPS5546502A (en) 1978-09-28 1978-09-28 Nonvolatile semiconductor memory

Publications (1)

Publication Number Publication Date
JPS5546502A true JPS5546502A (en) 1980-04-01

Family

ID=14740195

Family Applications (1)

Application Number Title Priority Date Filing Date
JP11858478A Pending JPS5546502A (en) 1978-09-28 1978-09-28 Nonvolatile semiconductor memory

Country Status (1)

Country Link
JP (1) JPS5546502A (en)

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS59154068A (en) * 1983-02-22 1984-09-03 Toshiba Corp Semiconductor memory device and manufacture thereof
US5194925A (en) * 1990-02-22 1993-03-16 Mitsubishi Denki Kabushiki Kaisha Electrically programmable non-volatie semiconductor memory device
US5621233A (en) * 1994-09-16 1997-04-15 Motorola Inc. Electrically programmable read-only memory cell

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS59154068A (en) * 1983-02-22 1984-09-03 Toshiba Corp Semiconductor memory device and manufacture thereof
US5194925A (en) * 1990-02-22 1993-03-16 Mitsubishi Denki Kabushiki Kaisha Electrically programmable non-volatie semiconductor memory device
US5378643A (en) * 1990-02-22 1995-01-03 Mitsubishi Denki Kabushiki Kaisha Electrically programmable non-volatile semiconductor memory device and manufacturing method thereof
US5621233A (en) * 1994-09-16 1997-04-15 Motorola Inc. Electrically programmable read-only memory cell

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